公开(公告)号：US20240376135A1

公开(公告)日：2024-11-14

申请号：US18779539

申请日：2024-07-22

Applicant: Inpria Corporation

Inventor： Brian J. Cardineau ,  William Earley ,  Stephen T. Meyers ,  Kai Jiang ,  Jeremy T. Anderson

IPC: C07F7/22 ,  G03F7/004 ,  G03F7/20

Abstract: Patterning compositions are described based on organo tin dodecamers with hydrocarbyl ligands, oxo ligands, hydroxo ligands and carboxylato ligands. Alternative dodecamer embodiments have organo tin ligands in place of hydrocarbyl ligands. The organo tin ligands can be incorporated into the dodecamers from a monomer with the structure (RCC)3SnQ, where R is a hydrocarbyl group and Q is a alkyl tin moiety with a carbon bonded to the Sn atom of the monomer and with a Sn bonded as a replacement of a quaternary carbon atom with bonds to 4 carbon atoms. Some or all of the carboxylato and hydroxyl ligands can be replaced with fluoride ions. Good EUV patterning results are obtained with the dodecamer based patterning compositions.

公开(公告)号：US11809081B2

公开(公告)日：2023-11-07

申请号：US17832920

申请日：2022-06-06

Applicant: Inpria Corporation

Inventor： Stephen T. Meyers ,  Jeremy T. Anderson ,  Brian J. Cardineau ,  Joseph B. Edson ,  Kai Jiang ,  Douglas A. Keszler ,  Alan J. Telecky

IPC: G03F7/16 ,  G03F7/004 ,  G03F7/38 ,  C23C16/40 ,  C23C14/08 ,  C23C16/455 ,  G03F7/30 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40

CPC classification number: G03F7/168 ,  C23C14/086 ,  C23C16/407 ,  C23C16/45523 ,  C23C16/45561 ,  G03F7/0042 ,  G03F7/0043 ,  G03F7/162 ,  G03F7/167 ,  G03F7/2004 ,  G03F7/30 ,  G03F7/325 ,  G03F7/38 ,  G03F7/40

Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.

公开(公告)号：US20230004090A1

公开(公告)日：2023-01-05

申请号：US17939328

申请日：2022-09-07

Applicant: Inpria Corporation

Inventor： Stephen T. Meyers ,  Jeremy T. Anderson ,  Brian J. Cardineau ,  Joseph B. Edson ,  Kai Jiang ,  Douglas A. Keszler ,  Alan J. Telecky

IPC: G03F7/16 ,  G03F7/38 ,  C23C16/40 ,  C23C14/08 ,  G03F7/004 ,  C23C16/455 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40

Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.

公开(公告)号：US11537048B2

公开(公告)日：2022-12-27

申请号：US16987120

申请日：2020-08-06

Applicant: Inpria Corporation

Inventor： Stephen T. Meyers ,  Jeremy T. Anderson ,  Brian J. Cardineau ,  Joseph B. Edson ,  Kai Jiang ,  Douglas A. Keszler ,  Alan J. Telecky

IPC: G03F7/16 ,  C23C14/08 ,  G03F7/38 ,  C23C16/40 ,  G03F7/004 ,  C23C16/455 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40

Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.

公开(公告)号：US20200326627A1

公开(公告)日：2020-10-15

申请号：US16845511

申请日：2020-04-10

Applicant: Inpria Corporation

Inventor： Kai Jiang ,  Brian J. Cardineau ,  Lauren B. McQuade ,  Jeremy T. Anderson ,  Stephen T. Meyers ,  Michael Kocsis ,  Amrit K. Narasimhan

IPC: G03F7/32 ,  G03F7/42 ,  G03F7/20 ,  G03F7/40 ,  G03F7/16

Abstract: Developer compositions are described based on blends of solvents, in which the developers are particularly effective for EUV patterning using organometallic based patterning compositions. Methods for use of these developing compositions are described. The blends of solvents can be selected based on Hansen solubility parameters. Generally, one solvent has low polarity as express by the sum of δP+δH, and a second solvent component of the developer has a higher value of δP+δH. Corresponding solvent compositions are described.

公开(公告)号：US12129271B2

公开(公告)日：2024-10-29

申请号：US17380475

申请日：2021-07-20

Applicant: Inpria Corporation

Inventor： Brian J. Cardineau ,  Stephen T. Meyers ,  Kai Jiang ,  William Earley ,  Jeremy T. Anderson

IPC: C07F7/22 ,  G03F7/004 ,  G03F7/20 ,  G03F7/32

CPC classification number: C07F7/2224 ,  G03F7/0042 ,  G03F7/2004 ,  G03F7/325 ,  C07B2200/13

Abstract: Organotin clusters are described with the formula R3Sn3(O2CR′)5−x(OH)2+x(μ3-O) with 0≤x

公开(公告)号：US20240337926A1

公开(公告)日：2024-10-10

申请号：US18745066

申请日：2024-06-17

Applicant: Inpria Corporation

Inventor： Stephen T. Meyers ,  Jeremy T. Anderson ,  Joseph B. Edson ,  Kai Jiang ,  Douglas A. Keszler ,  Michael K. Kocsis ,  Alan J. Telecky ,  Brian J. Cardineau

IPC: G03F7/004 ,  G03F7/20 ,  G03F7/32

CPC classification number: G03F7/0042 ,  G03F7/0043 ,  G03F7/2004 ,  G03F7/32 ,  G03F7/322 ,  G03F7/325

Abstract: Organometallic radiation resist compositions are described based on tin ions with alkyl ligands. Some of the compositions have branched alkyl ligands to provide for improved patterning contrast while maintaining a high degree of solution stability. Blends of compounds with distinct alkyl ligands can provide further improvement in the patterning. High resolution patterning with a half-pitch of no more than 25 nm can be achieved with a line width roughness of no more than about 4.5 nm. Synthesis techniques have been developed that allow for the formation of alkyl tin oxide hydroxide compositions with very low metal contamination.

公开(公告)号：US11988958B2

公开(公告)日：2024-05-21

申请号：US16536768

申请日：2019-08-09

Applicant: Inpria Corporation

Inventor： Stephen T. Meyers ,  Douglas A. Keszler ,  Kai Jiang ,  Jeremy T. Anderson ,  Andrew Grenville

IPC: G03F7/004 ,  G03F7/09 ,  G03F7/20 ,  G03F7/30 ,  G03F7/32

CPC classification number: G03F7/0042 ,  G03F7/0043 ,  G03F7/09 ,  G03F7/20 ,  G03F7/2002 ,  G03F7/2037 ,  G03F7/30 ,  G03F7/32 ,  G03F7/322 ,  G03F7/325

Abstract: Organometallic solutions have been found to provide high resolution radiation based patterning using thin coatings. The patterning can involve irradiation of the coated surface with a selected pattern and developing the pattern with a developing agent to form the developed image. The patternable coatings may be susceptible to positive-tone patterning or negative-tone patterning based on the use of an organic developing agent or an aqueous acid or base developing agent. The radiation sensitive coatings can comprise a metal oxo/hydroxo network with organic ligands. A precursor solution can comprise an organic liquid and metal polynuclear oxo-hydroxo cations with organic ligands having metal carbon bonds and/or metal carboxylate bonds.

公开(公告)号：US10975109B2

公开(公告)日：2021-04-13

申请号：US16936861

申请日：2020-07-23

Applicant: Inpria Corporation

Inventor： Joseph B. Edson ,  Thomas J. Lamkin ,  William Earley ,  Truman Wambach ,  Jeremy T. Anderson

IPC: C07F7/22

Abstract: A pure composition comprises a monoalkyltin trialkoxide compound represented by the chemical formula RSn(OR′)3 or a monoalkyl tin triamide compound represented by the chemical formula RSn(NR′2)3 and no more than 4 mole % dialkyltin compounds relative to the total tin amount, where R is a hydrocarbyl group with 1-31 carbon atoms, and wherein R′ is a hydrocarbyl group with 1-10 carbon atoms. Methods are described for the formation of the pure compositions. A solid composition comprises a monoalkyl triamido tin compound represented by the chemical formula RSn—(NR′COR″)3, where R is a hydrocarbyl group with 1-31 carbon atoms, and where R′ and R″ are independently a hydrocarbyl group with 1-10 carbon atoms. The compositions are suitable for the formation of resist compositions suitable for EUV patterning in which the compositions have a high EUV absorption.

公开(公告)号：US20200369691A1

公开(公告)日：2020-11-26

申请号：US16936861

申请日：2020-07-23

Applicant: Inpria Corporation

Inventor： Joseph B. Edson ,  Thomas J. Lamkin ,  William Earley ,  Truman Wambach ,  Jeremy T. Anderson

IPC: C07F7/22

Abstract: A pure composition comprises a monoalkyltin trialkoxide compound represented by the chemical formula RSn(OR′)3 or a monoalkyl tin triamide compound represented by the chemical formula RSn(NR′2)3 and no more than 4 mole % dialkyltin compounds relative to the total tin amount, where R is a hydrocarbyl group with 1-31 carbon atoms, and wherein R′ is a hydrocarbyl group with 1-10 carbon atoms. Methods are described for the formation of the pure compositions. A solid composition comprises a monoalkyl triamido tin compound represented by the chemical formula RSn—(NR′COR″)3, where R is a hydrocarbyl group with 1-31 carbon atoms, and where R′ and R″ are independently a hydrocarbyl group with 1-10 carbon atoms. The compositions are suitable for the formation of resist compositions suitable for EUV patterning in which the compositions have a high EUV absorption.