公开(公告)号：US09368637B2

公开(公告)日：2016-06-14

申请号：US14348763

申请日：2013-07-15

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Li Zhang ,  Chunsheng Jiang ,  Dongfang Wang ,  Haijing Chen ,  Fengjuan Liu

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1262 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78633 ,  H01L29/78693

Abstract: A thin film transistor (TFT) and manufacturing method thereof, an array substrate and a display device are provided. The thin film transistor comprises a substrate; an active layer formed on the substrate; a first conductive contact layer and a second conductive contact layer formed on the active layer; an etch-stop layer formed over the first contact layer and the second contact layer; and a source connected with the first contact layer, a drain connected with the second contact layer and a gate arranged between the source and the drain formed over the etch-stop layer. The TFT has a simple structure and better performance.

Abstract translation: 提供薄膜晶体管（TFT）及其制造方法，阵列基板和显示装置。 薄膜晶体管包括基板; 形成在所述基板上的有源层; 第一导电接触层和形成在有源层上的第二导电接触层; 形成在所述第一接触层和所述第二接触层上的蚀刻停止层; 以及与第一接触层连接的源极，与第二接触层连接的漏极和布置在蚀刻停止层上形成的源极和漏极之间的栅极。 TFT具有结构简单，性能更好的特点。

公开(公告)号：US12183824B2

公开(公告)日：2024-12-31

申请号：US17611156

申请日：2021-01-28

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jie Huang ,  Jiayu He ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Fengjuan Liu ,  Nianqi Yao ,  Kun Zhao ,  Tianmin Zhou ,  Jiushi Wang ,  Zhongpeng Tian

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  G02F1/1368

Abstract: The present disclosure relates to the field of display technologies, and in particular to a thin film transistor and a method for manufacturing the same, an array substrate and a display device. An active layer of the thin film transistor includes at least two metal oxide semi-conductor layers, the at least two metal oxide semi-conductor layers include a channel layer and a first protection layer, and metals in the channel layer include tin, and at least one of indium, gallium and zinc. The first protection layer includes praseodymium used to absorb photo-generated electrons from at least one of the channel layer and the first protection layer which is under light irradiation and reduce a photo-generated current caused by the light irradiation.

公开(公告)号：US20200235138A1

公开(公告)日：2020-07-23

申请号：US16649854

申请日：2019-10-15

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hongda Sun ,  Fengjuan Liu ,  Dini Xie ,  Pengfei Gu

IPC: H01L27/12 ,  H01L29/786 ,  H01L23/552

Abstract: The present disclosure provides a substrate, a manufacturing method thereof, and a transparent display device. The substrate comprising: a plurality of pixel units, at least a part of which includes a light-emitting area and a transparent area, and the light-emitting area includes a thin-film transistor; a light blocking member disposed in the light-emitting area and configured to block light that is directed to the thin-film transistor through the transparent area.

公开(公告)号：US10707236B2

公开(公告)日：2020-07-07

申请号：US16061078

申请日：2017-10-26

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhen Song ,  Guoying Wang ,  Fengjuan Liu

IPC: H01L29/04 ,  H01L27/12 ,  H01L29/786 ,  H01L27/32 ,  H01L21/77 ,  G02F1/1362

Abstract: An array substrate, a manufacturing method thereof and a display device are provided. The manufacturing method includes: forming a light-shielding pattern layer, a buffer layer, an active layer, a gate insulating layer and a gate electrode on a base substrate, which are away from the base substrate in sequence; depositing an amorphous silicon (a-Si) film on the base substrate in a temperature range of 15-150° C.; forming a first interlayer dielectric (ILD) at least disposed above the active layer by patterning the a-Si film; forming through holes in the first ILD, through which a source contact region and a drain contact region of the active layer are exposed; and forming a source electrode and a drain electrode on the first ILD, which are respectively connected with the source contact region and the drain contact region via the through holes.

公开(公告)号：US09887292B2

公开(公告)日：2018-02-06

申请号：US14908877

申请日：2015-08-20

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Fengjuan Liu ,  Longbao Xin

IPC: H01L29/10 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L29/78606 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1262 ,  H01L29/7869

Abstract: The present invention discloses an array substrate and a preparation method thereof, a display panel and a display device, so as to solve the problem that the performance of the oxide TFT may be reduced and even out of work due to relatively great shift of the threshold voltage of the oxide TFT since the water, oxygen and hydrogen groups may permeate to the active layer of the oxide TFT from the passivation layer above the oxide TFT. The array substrate comprises a base substrate, an oxide thin film transistor TFT formed on the base substrate, a passivation layer being arranged above the oxide TFT, the passivation layer comprises a first film layer, the first film layer being a silicon oxide film; the passivation further comprises a second film layer formed on the first film layer, the second film layer is an alternate stack of silicon nitride films and silicon oxide films, a base layer of the second film layer close to the first film layer is a silicon nitride film; wherein the thickness of the first film layer is greater than the thickness of the second film layer.

公开(公告)号：US09857344B2

公开(公告)日：2018-01-02

申请号：US14574841

申请日：2014-12-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaodi Liu ,  Cuili Gai ,  Fengjuan Liu ,  Gang Wang

IPC: G01N33/00 ,  H01L29/22 ,  H01L29/786 ,  H01L29/26

CPC classification number: G01N33/0027 ,  G01N33/0062 ,  H01L29/22 ,  H01L29/26 ,  H01L29/786

Abstract: Embodiments of the present invention provide a gas detection sensor, a display panel, and a display device. The gas detection sensor comprises: a gas sensitive part; two detection electrodes electrically connected with each other through the gas sensitive part; and a protective layer enclosing the gas sensitive part and the detection electrodes. When one of the detection electrodes is applied with a detecting signal, the detecting signal is output from the other detection electrode after being modulated by the gas sensitive part, and a voltage signal output by the other detection electrode is related to a nature of the outside air to which the gas sensitive part is exposed, thereby a detection on air quality may be achieved through detecting the voltage signal output from the other detection electrode, such that a simply structured and portable gas detection sensor can be realized.

公开(公告)号：US09761725B2

公开(公告)日：2017-09-12

申请号：US15307362

申请日：2015-02-27

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lung Pao Hsin ,  Fengjuan Liu

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/45 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/78618 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/7869 ,  H01L29/78696

Abstract: Embodiments of the present invention relates to a thin film transistor and a method for manufacturing the same, a display substrate and a display device. The thin film transistor comprises an active layer, a source electrode, a drain electrode and an ohmic contact layer, wherein the ohmic contact layer is disposed between the active layer and the source electrode and/or between the active layer and the drain electrode to improve an ohmic contact property of the active layer with the source electrode and/or the drain electrode. The present invention solves the problem of poor ohmic contact effect between the active layer and the source and drain electrodes in the existing thin film transistor, thereby improving the ohmic contact property of the active layer with the source and drain electrodes and meanwhile improving display effect of images of a display.

公开(公告)号：US09717143B2

公开(公告)日：2017-07-25

申请号：US14353389

申请日：2013-12-12

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Meili Wang ,  Hongda Sun ,  Fengjuan Liu

IPC: H05K3/02 ,  H05K3/46 ,  H05K1/02 ,  H01L23/00 ,  H01L21/48 ,  H05K1/03

CPC classification number: H05K1/028 ,  H01L21/4846 ,  H01L21/6835 ,  H01L23/00 ,  H01L25/105 ,  H01L51/003 ,  H01L51/5228 ,  H01L2221/68318 ,  H01L2221/6835 ,  H01L2221/68381 ,  H01L2251/5338 ,  H01L2924/0002 ,  H05K1/0393 ,  H05K3/022 ,  H05K3/4644 ,  H05K2201/0195 ,  H05K2203/0235 ,  H05K2203/068 ,  H01L2924/00

Abstract: A method for fabricating a flexible substrate and a flexible substrate prefabricated component are disclosed, the flexible substrate comprises an electronic device and a flexible layer provided with the electronic device. The fabrication method comprises: disposing a single-sided adhesive layer at a central portion of a surface of a support substrate, an adhesive side of the single-sided adhesive layer being in contact with the support substrate; disposing a double-sided adhesive layer at a peripheral region of the support substrate; disposing the flexible layer on surfaces of the single-sided adhesive layer and the double-sided adhesive layer, the flexible layer being bonded to the double-sided adhesive layer; disposing the electronic device in a region of a surface of the flexible layer corresponding to the single-sided adhesive layer; cutting the flexible layer along a boundary of the electronic device and removing the flexible layer from the single-sided adhesive layer.

公开(公告)号：US09711653B2

公开(公告)日：2017-07-18

申请号：US14409333

申请日：2014-06-20

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Meili Wang ,  Chunsheng Jiang ,  Dongfang Wang ,  Fengjuan Liu

IPC: H01L21/00 ,  H01L29/786 ,  H01L29/66 ,  H01L21/266 ,  H01L21/02 ,  H01L27/32 ,  H01L21/265

CPC classification number: H01L29/78696 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/265 ,  H01L21/266 ,  H01L27/3244 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78609 ,  H01L29/7869

Abstract: Embodiments of the present invention provide a thin film transistor, method for fabricating the thin film transistor and display apparatus. The method includes steps of: forming an active layer pattern which has a mobility greater than a predetermined threshold from an active layer material; and performing ion implantation on the active layer pattern. The energy of a compound bond formed from the implanted ions is greater than that of a compound bond formed from ions in the active layer material, thereby reducing the chance of vacancy formation and reducing the carrier concentration. Therefore, the mobility of the active layer surface is reduced, the leakage current is reduced, the threshold voltage is adjusted to shift toward positive direction and performance of the thin film transistor is improved.

公开(公告)号：US20170005198A1

公开(公告)日：2017-01-05

申请号：US14771526

申请日：2014-10-30

Applicant: BOE Technology Group Co., Ltd.

Inventor： Li Zhang ,  Meili Wang ,  Fengjuan Liu

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/66969 ,  H01L29/786

Abstract: The present disclosure provides a method for producing a thin film transistor. The method includes the steps of: forming a protective layer on an active layer of the thin film transistor and patterning the protective layer along with the active layer when the active layer is deposited; depositing a source and drain electrode layer and patterning it by a dry etching to form a source electrode and a drain electrode; and etching or passivating the protective layer located in a back channel region of the source electrode and the drain electrode. In addition, the present disclosure also discloses a thin film transistor produced by the above method, and an array substrate.

Abstract translation: 本公开提供了一种制造薄膜晶体管的方法。 该方法包括以下步骤：在薄膜晶体管的有源层上形成保护层，并且当活性层沉积时，与活性层一起构图保护层; 沉积源极和漏极电极层并通过干蚀刻对其进行构图以形成源电极和漏电极; 以及蚀刻或钝化位于源电极和漏电极的背沟道区域中的保护层。 此外，本公开还公开了通过上述方法制造的薄膜晶体管和阵列基板。