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公开(公告)号：US20210336064A1
公开(公告)日：2021-10-28
申请号：US16473854
申请日：2018-11-14
Applicant: BOE Technology Group Co., Ltd.
Inventor： Pengfei Gu
IPC: H01L29/786 , H01L29/66
Abstract: A thin film transistor includes a base substrate and an active layer on the base substrate. The active layer includes a source electrode contact part, a drain electrode contact part, and a channel part between the source electrode contact part and the drain electrode contact part. The source electrode contact part and the drain electrode contact part are lightly doped parts. The source electrode contact part includes a first barrier part. The drain electrode contact part includes a second barrier part. Each of the first barrier part and the second barrier part includes a semiconductor material having an acceptor defect or an acceptor-like defect. Each of the source electrode contact part and the drain electrode contact part includes a semiconductor material having a donor defect or a donor-like defect. The first barrier part and the second barrier part are respectively on two sides of the channel part.
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公开(公告)号：US11387257B2
公开(公告)日：2022-07-12
申请号：US16498726
申请日：2019-04-01
Applicant: BOE Technology Group Co., Ltd.
Inventor： Pengfei Gu , Youngsuk Song
Abstract: An array substrate and a manufacturing method thereof, a display panel and a display device are provided. The array substrate includes: a base substrate including a driving thin film transistor region and a switching thin film transistor region; and a buffer layer containing oxygen, the buffer layer including a first buffer part located in the driving thin film transistor region and a second buffer part located in the switching thin film transistor region; the first buffer part has a first thickness, the second buffer part has a second thickness, and the second thickness is greater than the first thickness.
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公开(公告)号：US20190074338A1
公开(公告)日：2019-03-07
申请号：US16124079
申请日：2018-09-06
Applicant: BOE Technology Group Co., Ltd.
Inventor： Pengfei Gu
Abstract: There is provided a display panel, display apparatus, and a method for producing a display panel. The display panel has: a substrate; a planarization layer on the substrate; a first electrode on the planarization layer; a light-emitting layer on the first electrode; a second electrode on the light-emitting layer; and an auxiliary electrode in the planarization layer, wherein the auxiliary electrode is electrically connected to the second electrode.
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公开(公告)号：US10396104B2
公开(公告)日：2019-08-27
申请号：US15866675
申请日：2018-01-10
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Pengfei Gu
IPC: H01L27/08 , H01L27/12 , H01L27/32 , H01L49/02 , G02F1/1362 , H01L27/108
Abstract: A display substrate is disclosed. The display device includes a first electrode, a second electrode, and a vertical storage capacitor in an insulating layer. The vertical storage capacitor includes a first plate and a second plate which are spaced apart. The first plate is connected with the first electrode, the second plate is connected with the second electrode, and the first plate and the second plate are perpendicular with or tilted with respect to the substrate. A method for fabricating the display substrate and a display device are also disclosed.
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公开(公告)号：US11239259B2
公开(公告)日：2022-02-01
申请号：US16649854
申请日：2019-10-15
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Hongda Sun , Fengjuan Liu , Dini Xie , Pengfei Gu
IPC: H01L27/12 , H01L23/552 , H01L29/786
Abstract: The present disclosure provides a substrate, a manufacturing method thereof, and a transparent display device. The substrate comprising: a plurality of pixel units, at least a part of which includes a light-emitting area and a transparent area, and the light-emitting area includes a thin-film transistor; a light blocking member disposed in the light-emitting area and configured to block light that is directed to the thin-film transistor through the transparent area.
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Patent Agency Ranking
公开(公告)号：US09893323B2
公开(公告)日：2018-02-13
申请号：US15208446
申请日：2016-07-12
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Pengfei Gu , Fengjuan Liu , Hongda Sun
CPC classification number: H01L51/56 , H01L51/0023 , H01L51/0097 , H01L51/5088 , H01L51/5092 , H01L51/5206 , H01L2251/303
Abstract: A method for preparing an OLED and an OLED device are provided. The method for preparing an OLED comprises forming an anode metal layer on an organic layer; forming an inorganic layer on the anode metal layer; and forming the anode metal layer into an anode layer comprising a pattern of an anode.
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公开(公告)号：US20210358964A1
公开(公告)日：2021-11-18
申请号：US16498726
申请日：2019-04-01
Applicant: BOE Technology Group Co., Ltd.
Inventor： Pengfei Gu , Youngsuk Song
IPC: H01L27/12
Abstract: An array substrate and a manufacturing method thereof, a display panel and a display device are provided. The array substrate includes: a base substrate including a driving thin film transistor region and a switching thin film transistor region; and a buffer layer containing oxygen, the buffer layer including a first buffer part located in the driving thin film transistor region and a second buffer part located in the switching thin film transistor region; the first buffer part has a first thickness, the second buffer part has a second thickness, and the second thickness is greater than the first thickness.
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公开(公告)号：US11133366B2
公开(公告)日：2021-09-28
申请号：US16607937
申请日：2018-10-24
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Pengfei Gu
IPC: H01L27/00 , H01L29/00 , H01L27/32 , H01L29/786
Abstract: An array substrate includes a base substrate, a first buffer layer, an oxygen barrier pattern, and a second buffer layer that are disposed on the base substrate in sequence, and a plurality of first thin film transistors (TFTs) that are disposed on the second buffer layer. The oxygen barrier pattern includes a plurality of oxygen barrier portions that are insulated and spaced apart. An orthographic projection of a portion of an active layer of one first TFT between a source and a drain on the base substrate is located within a range of an orthographic projection of one corresponding oxygen barrier portion of the plurality of oxygen barrier portions on the base substrate. And an oxygen content of the first buffer layer is higher than an oxygen content of the second buffer layer.
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公开(公告)号：US20200235138A1
公开(公告)日：2020-07-23
申请号：US16649854
申请日：2019-10-15
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Hongda Sun , Fengjuan Liu , Dini Xie , Pengfei Gu
IPC: H01L27/12 , H01L29/786 , H01L23/552
Abstract: The present disclosure provides a substrate, a manufacturing method thereof, and a transparent display device. The substrate comprising: a plurality of pixel units, at least a part of which includes a light-emitting area and a transparent area, and the light-emitting area includes a thin-film transistor; a light blocking member disposed in the light-emitting area and configured to block light that is directed to the thin-film transistor through the transparent area.
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10.发明申请公开(公告)号：US20190206905A1
公开(公告)日：2019-07-04
申请号：US16043278
申请日：2018-07-24
Applicant: BOE Technology Group Co., Ltd.
Inventor： Pengfei Gu
IPC: H01L27/12 , H01L29/786 , H01L29/417 , H01L29/423 , H01L29/66
CPC classification number: H01L27/1225 , H01L29/41733 , H01L29/42384 , H01L29/66757 , H01L29/66765 , H01L29/78666 , H01L29/78669 , H01L29/7869
Abstract: A thin film transistor (TFT), manufacturing method thereof, array substrate and display device are provided. The TFT includes a carrier regulating layer, an insulating layer and an active layer. The insulating layer is located at a side of the active layer, the carrier regulating layer is located at a side of the insulating layer facing away from the active layer, orthographic projection of the active layer on the insulating layer covers orthographic projection of the carrier regulating layer on the insulating layer, and the carrier regulating layer is used to regulate carrier concentration in the active layer. By arranging the carrier regulating layer insulated from the active layer, carrier concentration in the carrier regulating layer may be regulated based on the need for different initial threshold voltages of the TFT. Thus, uniformity of the TFT film layers and accurate control of the initial threshold voltage of the TFT are achieved simultaneously.
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