公开(公告)号：US10090368B2

公开(公告)日：2018-10-02

申请号：US14785830

申请日：2015-02-27

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jingang Fang ,  Longbao Xin ,  Hongda Sun

IPC: H01L27/12 ,  H01L27/32

Abstract: The present invention provides an array substrate and a manufacturing method thereof, and a display apparatus; and it relates to the field of display. The array substrate includes a first thin film transistor and a first electrode which are formed on a substrate. The first thin film transistor includes a gate, a gate insulating layer, an active layer, and an etch stop layer. The etch stop layer is formed with first via holes, and the etch stop layer and the gate insulating layer are formed with a second via hole at a position corresponding to the first electrode. A maximal diameter of the first via holes is not greater than a minimal diameter of the second via hole.

公开(公告)号：US09887292B2

公开(公告)日：2018-02-06

申请号：US14908877

申请日：2015-08-20

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Fengjuan Liu ,  Longbao Xin

IPC: H01L29/10 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L29/78606 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1262 ,  H01L29/7869

Abstract: The present invention discloses an array substrate and a preparation method thereof, a display panel and a display device, so as to solve the problem that the performance of the oxide TFT may be reduced and even out of work due to relatively great shift of the threshold voltage of the oxide TFT since the water, oxygen and hydrogen groups may permeate to the active layer of the oxide TFT from the passivation layer above the oxide TFT. The array substrate comprises a base substrate, an oxide thin film transistor TFT formed on the base substrate, a passivation layer being arranged above the oxide TFT, the passivation layer comprises a first film layer, the first film layer being a silicon oxide film; the passivation further comprises a second film layer formed on the first film layer, the second film layer is an alternate stack of silicon nitride films and silicon oxide films, a base layer of the second film layer close to the first film layer is a silicon nitride film; wherein the thickness of the first film layer is greater than the thickness of the second film layer.

公开(公告)号：US09620648B2

公开(公告)日：2017-04-11

申请号：US14555804

申请日：2014-11-28

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Meili Wang ,  Longbao Xin

IPC: H01L29/10 ,  H01L29/12 ,  H01L21/00 ,  H01L21/16 ,  H01L29/786 ,  H01L29/34 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/34 ,  H01L29/66969 ,  H01L29/78618

Abstract: The invention provides a thin film transistor, an array substrate and a display device. The thin film transistor comprises a conductive oxygen vacancy reducing layer for reducing oxygen vacancies in an active layer. The oxygen vacancy reducing layer is disposed between the active layer and a source and/or the active layer and a drain. With the oxygen vacancy reducing layer, the number of the oxygen vacancies in the active layer is decreased greatly, which improves transmission rate of carriers and simultaneously reduces value of subthreshold swing of the thin film transistor.

公开(公告)号：US20160358991A1

公开(公告)日：2016-12-08

申请号：US14785830

申请日：2015-02-27

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jingang Fang ,  Longbao Xin ,  Hongda Sun

IPC: H01L27/32 ,  H01L27/12

CPC classification number: H01L27/3262 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1288 ,  H01L27/3276 ,  H01L2227/323

Abstract: The present invention provides an array substrate and a manufacturing method thereof, and a display apparatus; and it relates to the field of display. The array substrate includes a first thin film transistor and a first electrode which are formed on a substrate. The first thin film transistor includes a gate, a gate insulating layer, an active layer, and an etch stop layer. The etch stop layer is formed with first via holes, and the etch stop layer and the gate insulating layer are formed with a second via hole at a position corresponding to the first electrode. A maximal diameter of the first via holes is not greater than a minimal diameter of the second via hole.

Abstract translation: 本发明提供阵列基板及其制造方法以及显示装置; 它涉及显示领域。 阵列基板包括形成在基板上的第一薄膜晶体管和第一电极。 第一薄膜晶体管包括栅极，栅极绝缘层，有源层和蚀刻停止层。 蚀刻停止层由第一通孔形成，并且蚀刻停止层和栅极绝缘层在对应于第一电极的位置处形成有第二通孔。 第一通孔的最大直径不大于第二通孔的最小直径。