Aqueous cleaning of paste residue
    21.
    发明授权
    Aqueous cleaning of paste residue 失效
    糊状残留物的水性清洗

    公开(公告)号:US06277799B1

    公开(公告)日:2001-08-21

    申请号:US09344886

    申请日:1999-06-25

    Abstract: This invention relates to an aqueous cleaning method for removal of metal-organic composite paste residue from the surface of components, such as, screening masks, associated paste screening equipment, substrates, to name a few. The invention is particularly concerned with aqueous alkaline cleaning solutions comprising alkali metal salt and/or quaternary ammonium salt of an organic acid preferably &agr;-hydroxy carboxylic acid in the presence of excess alkali and optionally a surface active agent for use in cleaning components, such as, screening masks, associated screening equipment, substrates, etc., which are used in the production of electronic components.

    Abstract translation: 本发明涉及从组分表面除去金属 - 有机复合糊状残留物的水性清洗方法,例如筛选掩模,相关的糊状物筛选设备,底物等等。 本发明特别涉及含有碱金属盐和/或季铵盐的含水碱性清洗溶液,所述碱性金属盐和/或有机酸优选为α-羟基羧酸的季铵盐,所述碱性金属盐和/或季铵盐在过量碱和任选的表面活性剂存在下用于清洁组分,例如 ,筛选掩模,相关筛选设备,基材等,用于生产电子元件。

    Structure for a thin film multilayer capacitor
    26.
    发明授权
    Structure for a thin film multilayer capacitor 失效
    薄膜多层电容器的结构

    公开(公告)号:US6023407A

    公开(公告)日:2000-02-08

    申请号:US31235

    申请日:1998-02-26

    CPC classification number: H01L28/40 H01G4/306 Y10T29/435

    Abstract: An electronic component structure is proposed, wherein an interposer thin film capacitor structure is employed between an active electronic component and a multilayer circuit card. A method for making the interposer thin film capacitor is also proposed. In order to eliminate fatal electrical shorts in the overlying thin film regions that arise from pits, voids, or undulations on the substrate surface, a thick first metal layer, on the order of 0.5-10 .mu.m thick, is deposited on the substrate upon which the remaining thin films, including a dielectric film and second metal layer, are then applied. The first metal layer includes of Pt or other electrode metal, or a combination of Pt, Cr, and Cu metals, and a diffusion barrier layer. Additional Ti layers may be employed for adhesion enhancement. The thickness of the first metal layers are approximately: 200 A for the Cr layer; 0.5-10 .mu.m for the Cu layer; 1000 A-5000 A for the diffusion barrier; and 100 A-2500 A for a Pt layer.

    Abstract translation: 提出了一种电子部件结构,其中在有源电子部件和多层电路卡之间采用中介层薄膜电容器结构。 还提出了一种用于制造中介层薄膜电容器的方法。 为了消除由衬底表面上的凹坑,空隙或起伏引起的上覆薄膜区域中的致命电短路,厚度为0.5-10μm的厚的第一金属层沉积在衬底上 然后施加剩余的薄膜,包括电介质膜和第二金属层。 第一金属层包括Pt或其它电极金属,或Pt,Cr和Cu金属的组合以及扩散阻挡层。 另外的Ti层可以用于附着增强。 对于Cr层,第一金属层的厚度约为:200A; Cu层为0.5-10μm; 1000 A-5000 A用于扩散阻挡层; 和Pt层的100A-2500A。

Patent Agency Ranking