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公开(公告)号:US5370974A
公开(公告)日:1994-12-06
申请号:US905059
申请日:1992-06-26
CPC分类号: G03F7/2053 , Y10S430/146
摘要: A method of patterning a preimidized benzophenone photoactive polymer used as a photoresist with a laser light source improves its crosslinking efficiency and reduces swelling, thereby enabling the formation of lines on the order of microns.
摘要翻译: 用激光光源作为光致抗蚀剂图案化预定的二苯甲酮光敏聚合物的方法提高了其交联效率并减少溶胀,从而使得可以形成微米数量级的线。
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公开(公告)号:US5277725A
公开(公告)日:1994-01-11
申请号:US881448
申请日:1992-05-11
申请人: John Acocella , Peter A. Agostino , Arnold I. Baise , Richard A. Bates , Ray M. Bryant , Jon A. Casey , David R. Clarke , George Czornyj , Allen J. Dam , Lawrence D. David , Renuka S. Divakaruni , Werner E. Dunkel , Ajay P. Giri , Liang-Choo Hsia , James N. Humenik , Steven M. Kandetzke , Daniel P. Kirby , John U. Knickerbocker , Sarah H. Knickerbocker , Anthony Mastreani , Amy T. Matts , Robert W. Nufer , Charles H. Perry , Srinivasa S. N. Reddy , Salvatore J. Scilla , Mark A. Takacs , Lovell B. Wiggins
发明人: John Acocella , Peter A. Agostino , Arnold I. Baise , Richard A. Bates , Ray M. Bryant , Jon A. Casey , David R. Clarke , George Czornyj , Allen J. Dam , Lawrence D. David , Renuka S. Divakaruni , Werner E. Dunkel , Ajay P. Giri , Liang-Choo Hsia , James N. Humenik , Steven M. Kandetzke , Daniel P. Kirby , John U. Knickerbocker , Sarah H. Knickerbocker , Anthony Mastreani , Amy T. Matts , Robert W. Nufer , Charles H. Perry , Srinivasa S. N. Reddy , Salvatore J. Scilla , Mark A. Takacs , Lovell B. Wiggins
IPC分类号: H05K1/03 , C04B41/48 , C04B41/49 , H01L21/48 , H01L23/08 , H01L23/538 , H05K3/40 , C04B37/00 , B05D5/12
CPC分类号: H01L21/4857 , C04B41/488 , C04B41/4961 , H01L23/5383 , H05K3/4061 , C04B2111/00672 , C04B2111/00844 , H01L2924/0002 , H01L2924/09701 , H01L2924/12044 , H05K1/0306 , H05K2201/09581 , H05K2203/1147 , H05K2203/308
摘要: The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addressed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.
摘要翻译: 在金属的热循环过程中经历的裂纹:电介质半导体封装是由热膨胀系数不匹配引起的。 与这种开裂相关的非气密性可以通过用柔性材料回填可渗透裂缝来解决。 金属和电介质材料之间的均匀间隙可以类似地填充柔性材料,以提供应力消除,体积可压缩性和包装的强度。 此外,可渗透的骨架电介质可以被制造为具有烧结冶金的烧结多层结构,并随后注入柔性的温度稳定的材料以提供气密性和强度。
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公开(公告)号:US5215861A
公开(公告)日:1993-06-01
申请号:US852864
申请日:1992-03-17
IPC分类号: G03F7/038 , G03F7/039 , G03F7/075 , H01L21/027
CPC分类号: G03F7/0758
摘要: Reaction products of organosilane compounds and a novolac resin having phenolic groups are capable of generating either positive or negative tone patterns depending on the time and temperature of processing. Particular photosensitive materials contemplated have the following chemical formula: ##STR1##
摘要翻译: 有机硅烷化合物和具有酚基的酚醛清漆树脂的反应产物能够根据加工的时间和温度产生正或负色调图案。 预期的特定光敏材料具有以下化学式:
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公开(公告)号:US5270151A
公开(公告)日:1993-12-14
申请号:US852865
申请日:1992-03-17
CPC分类号: G03F7/094 , G03F7/0757
摘要: Reaction products of organosilane compounds or polydiphenylsilazane compounds and a novolac resin having phenolic groups can be used as O.sub.2 RIE barrier materials in semiconductor etching processes. These materials have low O.sub.2 etch rates and can be spun on to form crack-free thick layers. Particular RIE barrier materials contemplated have the general formula: ##STR1## wherein A is a methyl or phenyl group.
摘要翻译: 有机硅烷化合物或聚二苯基硅氮烷化合物和具有酚基的酚醛清漆树脂的反应产物可用作半导体蚀刻工艺中的O 2 RIE阻挡材料。 这些材料具有低的氧化蚀刻速率,并且可以旋转以形成无裂纹的厚层。 考虑的特定RIE阻隔材料具有以下通式:其中A是甲基或苯基。
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公开(公告)号:US5262273A
公开(公告)日:1993-11-16
申请号:US846300
申请日:1992-02-25
CPC分类号: G03F7/0758 , Y10S430/143
摘要: Reaction products of organosilane compounds and a novolac resin having phenolic groups have been found to have a very low rate of etching, thereby enabling the material to also be used as an RIE barrier in semiconductor manufacturing processes. A particular photosensitive material has the following chemical formula: ##STR1##
摘要翻译: 已经发现有机硅烷化合物和具有酚基的酚醛清漆树脂的反应产物具有非常低的蚀刻速率,从而使材料也可用作半导体制造工艺中的RIE屏障。 特定的感光材料具有以下化学式:
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公开(公告)号:US5135595A
公开(公告)日:1992-08-04
申请号:US503495
申请日:1990-03-30
申请人: John Acocella , Peter A. Agostino , Arnold I. Baise , Richard A. Bates , Ray M. Bryant , Jon A. Casey , David R. Clarke , George Czornyj , Allen J. Dam , Lawrence D. David , Renuka S. Divakaruni , Werner E. Dunkel , Ajay P. Giri , Liang-Choo Hsia , James N. Humenik , Steven M. Kandetzke , Daniel P. Kirby , John U. Knickerbocker , Sarah H. Knickerbocker , Anthony Mastreani , Amy T. Matts , Robert W. Nufer , Charles H. Perry , Srinivasa S. N. Reddy , Salvatore J. Scilla , Mark A. Takacs , Lovell B. Wiggins
发明人: John Acocella , Peter A. Agostino , Arnold I. Baise , Richard A. Bates , Ray M. Bryant , Jon A. Casey , David R. Clarke , George Czornyj , Allen J. Dam , Lawrence D. David , Renuka S. Divakaruni , Werner E. Dunkel , Ajay P. Giri , Liang-Choo Hsia , James N. Humenik , Steven M. Kandetzke , Daniel P. Kirby , John U. Knickerbocker , Sarah H. Knickerbocker , Anthony Mastreani , Amy T. Matts , Robert W. Nufer , Charles H. Perry , Srinivasa S. N. Reddy , Salvatore J. Scilla , Mark A. Takacs , Lovell B. Wiggins
CPC分类号: H01L21/4857 , C04B41/488 , C04B41/4961 , H01L23/5383 , H05K3/4061 , C04B2111/00672 , C04B2111/00844 , H01L2924/0002 , H01L2924/09701 , H01L2924/12044 , H05K1/0306 , H05K2201/09581 , H05K2203/1147 , H05K2203/308
摘要: The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addresssed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.
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公开(公告)号:US4735820A
公开(公告)日:1988-04-05
申请号:US50433
申请日:1987-05-18
IPC分类号: C23C18/16 , C04B41/53 , C23C18/31 , C23C18/34 , C23C18/40 , G03F7/00 , G03F7/42 , H05K3/10 , H05K3/18 , H05K3/26 , G03C5/00
CPC分类号: C08J7/123 , C04B41/5346 , G03F7/427 , H05K3/26 , H05K2201/0761 , H05K2203/095 , H05K3/108 , H05K3/181 , H05K3/184
摘要: Residual catalyst is removed from a dielectric substrate by exposing the substrate to a plasma formed from an inert gas.
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