Photosensitive reactive ion etch barrier
    5.
    发明授权
    Photosensitive reactive ion etch barrier 失效
    光敏反应离子蚀刻屏障

    公开(公告)号:US5262273A

    公开(公告)日:1993-11-16

    申请号:US846300

    申请日:1992-02-25

    IPC分类号: G03F7/075 G03C1/492

    CPC分类号: G03F7/0758 Y10S430/143

    摘要: Reaction products of organosilane compounds and a novolac resin having phenolic groups have been found to have a very low rate of etching, thereby enabling the material to also be used as an RIE barrier in semiconductor manufacturing processes. A particular photosensitive material has the following chemical formula: ##STR1##

    摘要翻译: 已经发现有机硅烷化合物和具有酚基的酚醛清漆树脂的反应产物具有非常低的蚀刻速率,从而使材料也可用作半导体制造工艺中的RIE屏障。 特定的感光材料具有以下化学式: