Method for forming vias in a dielectric film
    5.
    发明授权
    Method for forming vias in a dielectric film 失效
    在绝缘膜中形成通孔的方法

    公开(公告)号:US5874369A

    公开(公告)日:1999-02-23

    申请号:US761028

    申请日:1996-12-05

    CPC分类号: H01L21/76802 H01L28/55

    摘要: Vias are formed in a dielectric film overlying an electrode layer by sweeping a laser beam over the area in which the via is to be formed. In particular, a Nd:YAG laser, producing a beam of light having a 266 nm wave length, effectively ablates a barium strontium titanate dielectric film, without adversely affecting an underlying platinum electrode. The present invention overcomes the problem of wet chemical etching of dielectric films to form vias. Wet chemical etching often requires etchants that adversely affect the underlying metal electrode and typically require the use of environmentally undesirable chemicals.

    摘要翻译: 通过在要形成通孔的区域上扫掠激光束,在覆盖电极层的电介质膜中形成通孔。 特别地,产生具有266nm波长的光束的Nd:YAG激光器有效地烧蚀钛酸锶钡电介质膜,而不会对下面的铂电极产生不利影响。 本发明克服了介电膜的湿化学蚀刻形成通孔的问题。 湿式化学蚀刻通常需要对底层金属电极产生不利影响的蚀刻剂,通常需要使用对环境无害的化学品。