公开(公告)号：US20140035000A1

公开(公告)日：2014-02-06

申请号：US13564862

申请日：2012-08-02

Applicant: Viorel Ontalus ,  Pranita Kulkarni ,  Donald R. Wall ,  Zhengmao Zhu

Inventor： Viorel Ontalus ,  Pranita Kulkarni ,  Donald R. Wall ,  Zhengmao Zhu

IPC: H01L29/772 ,  H01L21/336

CPC classification number: H01L29/0847 ,  H01L21/823412 ,  H01L29/0649 ,  H01L29/165 ,  H01L29/167 ,  H01L29/41783 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66575 ,  H01L29/66628 ,  H01L29/66772 ,  H01L29/78 ,  H01L29/7834 ,  H01L29/78618 ,  H01L29/78687 ,  H01L2029/7858

Abstract: Carbon-doped semiconductor material portions are formed on a subset of surfaces of underlying semiconductor surfaces contiguously connected to a channel of a field effect transistor. Carbon-doped semiconductor material portions can be formed by selective epitaxy of a carbon-containing semiconductor material layer or by shallow implantation of carbon atoms into surface portions of the underlying semiconductor surfaces. The carbon-doped semiconductor material portions can be deposited as layers and subsequently patterned by etching, or can be formed after formation of disposable masking spacers. Raised source and drain regions are formed on the carbon-doped semiconductor material portions and on physically exposed surfaces of the underlying semiconductor surfaces. The carbon-doped semiconductor material portions locally retard dopant diffusion from the raised source and drain regions into the underlying semiconductor material regions, thereby enabling local tailoring of the dopant profile, and alteration of device parameters for the field effect transistor.

Abstract translation: 碳掺杂半导体材料部分形成在与场效应晶体管的沟道连接的下面的半导体表面的子集上。 碳掺杂半导体材料部分可以通过含碳半导体材料层的选择性外延或通过将碳原子浅入注入下面的半导体表面的表面部分来形成。 碳掺杂的半导体材料部分可以作为层沉积，然后通过蚀刻进行图案化，或者可以在形成一次性掩模间隔物之后形成。 在碳掺杂的半导体材料部分和下面的半导体表面的物理暴露的表面上形成凸起的源区和漏区。 碳掺杂半导体材料部分将掺杂剂扩散部分局部延迟从升高的源极和漏极区域延伸到下面的半导体材料区域中，从而使得能够局部定制掺杂剂分布，以及改变场效应晶体管的器件参数。

公开(公告)号：US08107800B2

公开(公告)日：2012-01-31

申请号：US11970693

申请日：2008-01-08

Applicant: Raschid J. Bezama ,  Lewis S. Goldmann ,  Donald R. Wall

Inventor： Raschid J. Bezama ,  Lewis S. Goldmann ,  Donald R. Wall

IPC: F26B19/00

CPC classification number: H01L21/6875 ,  H01L21/67103

Abstract: An article supports a workpiece during thermal processing. At least three elongated support members, e.g., support pins, extend upwardly from an element such as support arms for supporting the workpiece. Each of the support members includes a first portion adjacent to the workpiece. A second portion extends downwardly from the first portion. The first portion can have a thermal response faster than the thermal response of the workpiece and the second portion can have a slower thermal response. A removable element may be mounted to the support member for adjusting the thermal response of the support member. With removable elements, the support members can be adjusted to cause no net transfer of heat to or from the workpiece.

Abstract translation: 物品在热处理过程中支撑工件。 至少三个细长的支撑构件，例如支撑销，从诸如用于支撑工件的支撑臂的元件向上延伸。 每个支撑构件包括与工件相邻的第一部分。 第二部分从第一部分向下延伸。 第一部分可以具有比工件的热响应更快的热响应，并且第二部分可以具有较慢的热响应。 可移动元件可以安装到支撑构件上，以调节支撑构件的热响应。 使用可移除元件，可以调节支撑构件，使得不会向工件或从工件传出热量的净传递。

公开(公告)号：US5439636A

公开(公告)日：1995-08-08

申请号：US836675

申请日：1992-02-18

Applicant: Raschid J. Bezama ,  Jon A. Casey ,  Mario E. Ecker ,  Shaji Farooq ,  Irene S. Frantz ,  Katharine G. Frase ,  David H. Gabriels ,  Lester W. Herron ,  John U. Knickerbocker ,  Sara H. Knickerbocker ,  Govindarajan Natarajan ,  John Thomson ,  Yee-Ming Ting ,  Sharon L. Tracy ,  Robert M. Troncillito ,  Vivek M. Sura ,  Donald R. Wall ,  Giai V. Yen

Inventor： Raschid J. Bezama ,  Jon A. Casey ,  Mario E. Ecker ,  Shaji Farooq ,  Irene S. Frantz ,  Katharine G. Frase ,  David H. Gabriels ,  Lester W. Herron ,  John U. Knickerbocker ,  Sara H. Knickerbocker ,  Govindarajan Natarajan ,  John Thomson ,  Yee-Ming Ting ,  Sharon L. Tracy ,  Robert M. Troncillito ,  Vivek M. Sura ,  Donald R. Wall ,  Giai V. Yen

IPC: B28B11/02 ,  H01L21/48 ,  H01L21/768 ,  H01L23/15 ,  H01L23/522 ,  H05K1/03 ,  H05K1/14 ,  H05K3/46 ,  B22F3/00

CPC classification number: H05K1/142 ,  H01L21/4807 ,  H01L23/15 ,  H05K3/46 ,  H05K3/4629 ,  H01L2924/0002 ,  H01L2924/09701 ,  H05K1/0306 ,  H05K2201/09972 ,  Y10T428/12049 ,  Y10T428/12146 ,  Y10T428/16 ,  Y10T428/163 ,  Y10T428/166 ,  Y10T428/192

Abstract: A large ceramic substrate article for electronic applications including at least one layer of sintered ceramic material, the layer including a plurality of greensheet segments of ceramic material joined edge to edge. Also disclosed is a method of fabricating a large ceramic greensheet article as well as a large ceramic substrate article.

Abstract translation: 一种用于电子应用的大型陶瓷衬底制品，包括至少一层烧结陶瓷材料，该层包括多个边缘到边缘连接的陶瓷材料毛坯块。 还公开了一种制造大型陶瓷毛坯制品的方法以及大型陶瓷基片制品。

公开(公告)号：US5260519A

公开(公告)日：1993-11-09

申请号：US949595

申请日：1992-09-23

Applicant: John U. Knickerbocker ,  Charles H. Perry ,  Donald R. Wall

Inventor： John U. Knickerbocker ,  Charles H. Perry ,  Donald R. Wall

IPC: H01L23/12 ,  H01L21/48 ,  H01L23/498 ,  H01L23/538 ,  H05K1/03 ,  H05K1/11 ,  H05K3/40 ,  H05K3/46 ,  H05K1/00

CPC classification number: H05K3/4061 ,  H01L21/486 ,  H01L23/49827 ,  H01L23/5384 ,  H01L2924/0002 ,  H01L2924/09701 ,  H05K1/0306 ,  H05K2201/0269 ,  H05K2201/096 ,  H05K3/4611 ,  H05K3/4629

Abstract: Disclosed is a multilayer ceramic substrate for electronic applications including:(a) at least one internal layer having vias filled with a metallic material;(b) at least one sealing layer having vias filled with a composite material that is a mixture of ceramic and metallic materials; and(c) at least one transition layer located between the internal and sealing layers having vias filled with a composite material that is a mixture of ceramic and metallic materials but having less ceramic and more metallic material than the sealing layer vias and less metallic material than the internal layer vias.Also disclosed is a method of forming the multilayer ceramic substrate.

公开(公告)号：US6068912A

公开(公告)日：2000-05-30

申请号：US71409

申请日：1998-05-01

Applicant: Srinivasa S. N. Reddy ,  Donald R. Wall

Inventor： Srinivasa S. N. Reddy ,  Donald R. Wall

IPC: H05K1/09 ,  C04B41/52 ,  C04B41/89 ,  C12N15/34 ,  C23C16/06 ,  H01L23/498 ,  H05K1/03 ,  H05K1/11 ,  H05K3/24 ,  H05K3/40 ,  B32B3/00 ,  C04B35/46

CPC classification number: H05K3/246 ,  C04B41/009 ,  C04B41/52 ,  C04B41/89 ,  H01L23/49883 ,  H05K3/4061 ,  C04B2111/00844 ,  H01L2924/0002 ,  H01L2924/09701 ,  H05K1/0306 ,  H05K1/113 ,  H05K2201/0317 ,  H05K2201/0347 ,  H05K3/245 ,  Y10T428/24917 ,  Y10T428/24926 ,  Y10T428/265

Abstract: A paste for one of a via and an external feature, such as a pad, tab, or line, of a ceramic substrate, includes at least one of titania and zirconia, and a filler material mixed with the at least one of titania and zirconia. Further, the via structure or external feature such as an input/output pad, tab, or line, includes a metallic plating thereover. A method of forming the via structure or the external feature on the ceramic substrate, includes steps of either depositing the paste in the via of the ceramic substrate or depositing the paste on the ceramic substrate, and depositing, by a dry process metallic plating, a metallic plating on the paste. The paste includes at least one of titania and zirconia for reducing residual stress without effecting the platability of the metallic plating.

Abstract translation: 用于陶瓷基板的通孔和外部特征（例如垫，突片或线）之一的糊料包括二氧化钛和氧化锆中的至少一种，以及与二氧化钛和氧化锆中的至少一种混合的填充材料 。 此外，通孔结构或诸如输入/输出焊盘，突片或线的外部特征包括其上的金属电镀。 在陶瓷基板上形成通孔结构或外部特征的方法包括以下步骤：将糊料沉积在陶瓷基板的通孔中或将该糊料沉积在陶瓷基板上，并通过干法金属镀层沉积 金属电镀在糊状物上。 糊料包括二氧化钛和氧化锆中的至少一种，用于降低残余应力而不影响金属镀层的镀层。

公开(公告)号：US5782324A

公开(公告)日：1998-07-21

申请号：US769196

申请日：1996-12-18

Applicant: Donald R. Wall

Inventor： Donald R. Wall

IPC: B22D19/00 ,  B22D25/00 ,  F16D65/10 ,  F16D69/04

CPC classification number: B22D19/00 ,  B22D25/00 ,  F16D65/10 ,  F16D2065/132 ,  F16D2065/1332 ,  F16D2069/0483 ,  F16D2069/0491 ,  F16D2200/0078 ,  F16D2250/00 ,  F16D2250/0092 ,  Y10T29/49988 ,  Y10T29/49991

Abstract: A composite brake drum for use in a drum brake assembly includes a one-piece mounting flange and shell and a liner cast integrally in a shell portion thereof. The method for forming the composite brake drum of this invention includes the steps of: (a) providing a generally flat sheet of a first material; (b) forming the flat sheet into a generally flat circular blank; (c) subjecting to the blank to a series of metal forming operations to produce a one piece mounting flange and shell; and (d) casting a liner formed from a second material within the one-piece mounting flange and shell to thereby produce the composite brake drum.

Abstract translation: 用于鼓式制动器组件的复合制动鼓包括一体式安装法兰和壳体以及一体地铸造在壳体部分中的衬套。 本发明的复合制动鼓的形成方法包括以下步骤：（a）提供大致平坦的第一材料片; （b）将平板形成为大致平坦的圆形坯料; （c）对坯料进行一系列的金属成型操作以制造一件安装法兰和外壳; 和（d）在一体式安装法兰和壳体内铸造由第二材料形成的衬垫，从而产生复合制动鼓。

公开(公告)号：US5541005A

公开(公告)日：1996-07-30

申请号：US438825

申请日：1995-05-11

Applicant: Raschid J. Bezama ,  Jon A. Casey ,  Mario E. Ecker ,  Shaji Farooq ,  Irene S. Frantz ,  Katherine G. Frase ,  David H. Gabriels ,  Lester W. Herron ,  John U. Knickerbocker ,  Sarah H. Knickerbocker ,  Govindarajan Natarajan ,  John Thomson ,  Yee-Ming Ting ,  Sharon L. Tracy ,  Robert M. Troncillito ,  Vivek M. Sura ,  Donald R. Wall ,  Giai V. Yen

Inventor： Raschid J. Bezama ,  Jon A. Casey ,  Mario E. Ecker ,  Shaji Farooq ,  Irene S. Frantz ,  Katherine G. Frase ,  David H. Gabriels ,  Lester W. Herron ,  John U. Knickerbocker ,  Sarah H. Knickerbocker ,  Govindarajan Natarajan ,  John Thomson ,  Yee-Ming Ting ,  Sharon L. Tracy ,  Robert M. Troncillito ,  Vivek M. Sura ,  Donald R. Wall ,  Giai V. Yen

IPC: B28B11/02 ,  H01L21/48 ,  H01L21/768 ,  H01L23/15 ,  H01L23/522 ,  H05K1/03 ,  H05K1/14 ,  H05K3/46 ,  B22F3/105

CPC classification number: H05K1/142 ,  H01L21/4807 ,  H01L23/15 ,  H05K3/46 ,  H05K3/4629 ,  H01L2924/0002 ,  H01L2924/09701 ,  H05K1/0306 ,  H05K2201/09972 ,  Y10T428/12049 ,  Y10T428/12146 ,  Y10T428/16 ,  Y10T428/163 ,  Y10T428/166 ,  Y10T428/192

Abstract: A large ceramic substrate article for electronic applications including at least one layer of sintered ceramic material, the layer including a plurality of greensheet segments of ceramic material joined edge to edge. Also disclosed is a method of fabricating a large ceramic greensheet article as well as a large ceramic substrate article.

Abstract translation: 一种用于电子应用的大型陶瓷衬底制品，包括至少一层烧结陶瓷材料，该层包括多个边缘到边缘连接的陶瓷材料毛坯块。 还公开了一种制造大型陶瓷毛坯制品的方法以及大型陶瓷基片制品。

公开(公告)号：US09059292B2

公开(公告)日：2015-06-16

申请号：US13564862

申请日：2012-08-02

Applicant: Viorel Ontalus ,  Pranita Kulkarni ,  Donald R. Wall ,  Zhengmao Zhu

Inventor： Viorel Ontalus ,  Pranita Kulkarni ,  Donald R. Wall ,  Zhengmao Zhu

IPC: H01L29/02 ,  H01L29/786 ,  H01L29/66 ,  H01L29/08 ,  H01L29/165 ,  H01L29/417 ,  H01L29/78

CPC classification number: H01L29/0847 ,  H01L21/823412 ,  H01L29/0649 ,  H01L29/165 ,  H01L29/167 ,  H01L29/41783 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66575 ,  H01L29/66628 ,  H01L29/66772 ,  H01L29/78 ,  H01L29/7834 ,  H01L29/78618 ,  H01L29/78687 ,  H01L2029/7858

Abstract: Carbon-doped semiconductor material portions are formed on a subset of surfaces of underlying semiconductor surfaces contiguously connected to a channel of a field effect transistor. Carbon-doped semiconductor material portions can be formed by selective epitaxy of a carbon-containing semiconductor material layer or by shallow implantation of carbon atoms into surface portions of the underlying semiconductor surfaces. The carbon-doped semiconductor material portions can be deposited as layers and subsequently patterned by etching, or can be formed after formation of disposable masking spacers. Raised source and drain regions are formed on the carbon-doped semiconductor material portions and on physically exposed surfaces of the underlying semiconductor surfaces. The carbon-doped semiconductor material portions locally retard dopant diffusion from the raised source and drain regions into the underlying semiconductor material regions, thereby enabling local tailoring of the dopant profile, and alteration of device parameters for the field effect transistor.

Abstract translation: 碳掺杂半导体材料部分形成在与场效应晶体管的沟道连接的下面的半导体表面的子集上。 碳掺杂半导体材料部分可以通过含碳半导体材料层的选择性外延或通过将碳原子浅入注入下面的半导体表面的表面部分来形成。 碳掺杂的半导体材料部分可以作为层沉积，然后通过蚀刻进行图案化，或者可以在形成一次性掩模间隔物之后形成。 在碳掺杂的半导体材料部分和下面的半导体表面的物理暴露的表面上形成凸起的源区和漏区。 碳掺杂半导体材料部分将掺杂剂扩散部分局部延迟从升高的源极和漏极区域延伸到下面的半导体材料区域中，从而使得能够局部定制掺杂剂分布，以及改变场效应晶体管的器件参数。

公开(公告)号：US07294909B2

公开(公告)日：2007-11-13

申请号：US11099161

申请日：2005-04-05

Applicant: Jon A. Casey ,  James G. Balz ,  Michael Berger ,  Jerome Cohen ,  Charles Hendricks ,  Richard Indyk ,  Mark LaPlante ,  David C. Long ,  Lori A. Maiorino ,  Arthur G. Merryman ,  Glenn A. Pomerantz ,  Robert A. Rita ,  Krystyna W. Semkow ,  Patrick E. Spencer ,  Brian R. Sundlof ,  Richard P. Surprenant ,  Donald R. Wall ,  Thomas A. Wassick ,  Kathleen M. Wiley

Inventor： Jon A. Casey ,  James G. Balz ,  Michael Berger ,  Jerome Cohen ,  Charles Hendricks ,  Richard Indyk ,  Mark LaPlante ,  David C. Long ,  Lori A. Maiorino ,  Arthur G. Merryman ,  Glenn A. Pomerantz ,  Robert A. Rita ,  Krystyna W. Semkow ,  Patrick E. Spencer ,  Brian R. Sundlof ,  Richard P. Surprenant ,  Donald R. Wall ,  Thomas A. Wassick ,  Kathleen M. Wiley

IPC: H01L27/148 ,  H01L29/768

CPC classification number: H05K3/225 ,  H01L21/4846 ,  H01L23/49811 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/3011 ,  H05K1/0306 ,  H05K3/0029 ,  H05K3/4629 ,  H05K2203/173 ,  Y10T29/49124 ,  Y10T29/49135 ,  H01L2924/00

Abstract: A multilayer ceramic repair process which provides a new electrical repair path to connect top surface vias. The repair path is established between a defective net and a redundant repair net contained within the multilayer ceramic substrate. The defective net and the repair net each terminate at surface vias of the substrate. A laser is used to form post fired circuitry on and in the substrate. This is followed by the electrical isolation of the defective net from the electrical repair structure and passivation of the electrical repair line.

Abstract translation: 一种多层陶瓷修复工艺，提供了一个新的电气修复路径，以连接顶面通孔。 修复路径是建立在有缺陷的网和包含在多层陶瓷基板内的冗余修复网之间。 有缺陷的网和修复网各自终止在基板的表面通孔处。 使用激光器在基板上和基板上形成点火电路。 之后是有缺陷的网络与电气修复结构的电气隔离和电气修复线路的钝化。

公开(公告)号：US06601284B1

公开(公告)日：2003-08-05

申请号：US09639547

申请日：2000-08-16

Applicant: Donald R. Wall

Inventor： Donald R. Wall

IPC: B21B146

CPC classification number: B22D19/00 ,  B22D25/00 ,  F16D65/10 ,  F16D2065/132 ,  F16D2065/1332 ,  F16D2069/0483 ,  F16D2069/0491 ,  F16D2200/0078 ,  F16D2250/00 ,  F16D2250/0092 ,  Y10T29/49988 ,  Y10T29/49991

Abstract: A composite brake drum for use in a drum brake assembly includes a one-piece mounting flange and shell and a liner cast integrally in a shell portion thereof. The method for forming the composite brake drum of this invention includes the steps of: (a) providing a generally circular metal blank having an initial pilot hole inner diameter; (b) spin forming the metal blank to produce a one-piece brake drum component defining a center longitudinal axis and including a cylindrical shell having a squealer band which defines a squealer band outer diameter, a mounting flange extending radially inwardly from one end of the shell toward the center longitudinal axis, and an annular lip extending radially inwardly from an opposite end of the shell toward the center longitudinal axis, and wherein the shell, the flange, and the lip cooperate to define a cylindrical mold cavity; (c) subsequent to step (b), centrifugally casting a liner in situ within the mold cavity of the brake drum component to thereby produce the composite vehicle brake drum; and (d) subsequent to step (c), machining the initial pilot hole inner diameter to a final pilot hole inner diameter by locating off of the squealer band outer diameter.

Abstract translation: 用于鼓式制动器组件的复合制动鼓包括一体式安装法兰和壳体以及一体地铸造在壳体部分中的衬套。 本发明的复合制动鼓的形成方法包括以下步骤：（a）提供具有初始导向孔内径的大致圆形的金属坯料; （b）旋转形成金属坯件以制造限定中心纵向轴线的一体式制动鼓部件，并且包括具有限定鼓轮带外径的尖叫带的圆柱形壳体，从所述滚筒的一端径向向内延伸的安装凸缘 壳体朝向中心纵向轴线，以及环形唇缘，其从壳体的相对端朝向中心纵向轴线径向向内延伸，并且其中壳体，凸缘和唇缘配合以限定圆柱形模腔; （c）在步骤（b）之后，在制动鼓部件的模腔内离心铸造衬套，从而产生复合车辆制动鼓; 和（d）在步骤（c）之后，通过定位离开尖叫带外径的方式将初始导向孔内径加工到最终引导孔内径。