Invention Grant
- Patent Title: Method and structure to control thermal gradients in semiconductor wafers during rapid thermal processing
- Patent Title (中): 控制快速热处理过程中半导体晶片热梯度的方法和结构
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Application No.: US11970693Application Date: 2008-01-08
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Publication No.: US08107800B2Publication Date: 2012-01-31
- Inventor: Raschid J. Bezama , Lewis S. Goldmann , Donald R. Wall
- Applicant: Raschid J. Bezama , Lewis S. Goldmann , Donald R. Wall
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Ian D. MacKinnon
- Main IPC: F26B19/00
- IPC: F26B19/00

Abstract:
An article supports a workpiece during thermal processing. At least three elongated support members, e.g., support pins, extend upwardly from an element such as support arms for supporting the workpiece. Each of the support members includes a first portion adjacent to the workpiece. A second portion extends downwardly from the first portion. The first portion can have a thermal response faster than the thermal response of the workpiece and the second portion can have a slower thermal response. A removable element may be mounted to the support member for adjusting the thermal response of the support member. With removable elements, the support members can be adjusted to cause no net transfer of heat to or from the workpiece.
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Information query
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