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    FILM PACKAGE AND METHOD OF FABRICATING PACKAGE MODULE
    2.
    发明申请
    FILM PACKAGE AND METHOD OF FABRICATING PACKAGE MODULE 有权

    公开(公告)号：US20210104452A1

    公开(公告)日：2021-04-08

    申请号：US16872567

    申请日：2020-05-12

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： SHLE-GE LEE ,  YOUNGBAE KIM ,  JI-YONG PARK

    IPC分类号： H01L23/498 ,  H05K1/11 ,  H01L29/768 ,  H01L23/31

    摘要： Disclosed are film packages and methods of fabricating package modules. The film package includes a film substrate that includes a chip region and a peripheral region facing each other in a first direction, a plurality of output pads that are arranged in the first direction on the chip region and on the peripheral region, and a semiconductor chip on the chip region and electrically connected to the output pads. The output pads on the chip region are arranged at regular first intervals along the first direction. The output pads include a plurality of first output pads that are arranged at a first pitch along the first direction on the chip region and a plurality of second output pads on the peripheral region. The second output pads are arranged at a second pitch greater than the first pitch of the first output pads.

    Solid-state image pickup device
    4.
    发明授权
    Solid-state image pickup device 有权

    公开(公告)号：US10825849B2

    公开(公告)日：2020-11-03

    申请号：US16277351

    申请日：2019-02-15

    申请人： Sony Corporation

    发明人： Takayuki Ezaki ,  Teruo Hirayama

    IPC分类号： H01L31/06 ,  H01L27/148 ,  H01L29/768 ,  H01L31/062 ,  H01L31/113 ,  H01L27/146 ,  H01L31/02 ,  H01L29/423

    摘要： A solid-state image pickup device 1 according to the present invention includes a semiconductor substrate 2 on which a pixel 20 composed of a photodiode 3 and a transistor is formed. The transistor comprising the pixel 20 is formed on the surface of the semiconductor substrate, a pn junction portion formed between high concentration regions of the photodiode 3 is provided within the semiconductor substrate 2 and a part of the pn junction portion of the photodiode 3 is extended to a lower portion of the transistor formed on the surface of the semiconductor substrate 2. According to the present invention, there is provided a solid-state image pickup device in which a pixel size can be microminiaturized without lowering a saturated electric charge amount (Qs) and sensitivity.

    SEMICONDUCTOR DEVICE
    5.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20200328311A1

    公开(公告)日：2020-10-15

    申请号：US16408415

    申请日：2019-05-09

    申请人： UNITED MICROELECTRONICS CORP.

    发明人： Purakh Raj Verma ,  Ching-Yang Wen ,  Li Wang ,  Kai Cheng

    IPC分类号： H01L29/786 ,  H01L29/06 ,  H01L29/78 ,  H01L29/768

    摘要： A semiconductor device includes a buried dielectric layer, a first gate structure, a second gate structure, a first source/drain region, a second source/drain region, a first contact structure and a second contact structure. The first gate structure and the second gate structure disposed respectively in the front-side and backside of the dielectric layer, the first source/drain region and the second source/drain region are disposed between the first gate structure and the second gate structure, the first contact structure is disposed in the front-side of the dielectric layer and electrically coupled to the first source/drain region, the second contact structure is disposed in the backside of the dielectric layer and electrically coupled to the second source/drain region.

    Semiconductor device, memory circuit, method of manufacturing semiconductor device
    7.
    发明授权
    Semiconductor device, memory circuit, method of manufacturing semiconductor device 有权

    公开(公告)号：US10269867B2

    公开(公告)日：2019-04-23

    申请号：US15107977

    申请日：2014-12-11

    申请人： SONY CORPORATION

    发明人： Takashi Yokoyama ,  Taku Umebayashi

    IPC分类号： H01L29/04 ,  H01L27/22 ,  H01L21/8234 ,  H01L29/423 ,  H01L29/768 ,  H01L43/02 ,  H01L27/24 ,  H01L29/78

    摘要： A semiconductor device of the technology includes a first diffusion section (22), a second diffusion section (21), a channel section (23), a gate section (24), and a stress application section (31, 32, or 33). In a semiconductor layer (10) having a groove (10A), the first diffusion section (22) is formed at or in the vicinity of a bottom of the groove (10A), the second diffusion section (21) is formed at an upper end of the groove (10A), and the channel section (23) is formed between the first diffusion section (22) and the second diffusion section (21). The gate section (24) is buried in the groove (10A) at a position opposing the channel section (23). The stress application section (31, 32, or 33) applies one of compressive stress and tensile stress to the channel section (23) in a normal direction to the semiconductor layer (10).