公开(公告)号：US20200035928A1

公开(公告)日：2020-01-30

申请号：US16588484

申请日：2019-09-30

申请人： FUJIFILM Corporation ,  THE UNIVERSITY OF TOKYO

发明人： Fumiko TAMAKUNI ,  Tetsuya WATANABE ,  Toshihiro OKAMOTO ,  Junichi TAKEYA

IPC分类号： H01L51/00

摘要： An organic semiconductor element in which an organic semiconductor layer contains a compound of Formula (1) and/or a compound of Formula (2) or the organic semiconductor layer contains a polymer having a structure of any one of Formulae (6) to (8): in which Rings A and B each represent an aromatic 5-membered ring, X represents a nitrogen atom or CRX, and RX represents a hydrogen atom or a substituent; E represents an oxygen atom or a sulfur atom; R1 to R4 each represent a specific substituent; and p, q, r, and s each are an integer of 0 to 2; n is 1 or 2; and * represents a bonding site.

公开(公告)号：US20190131546A1

公开(公告)日：2019-05-02

申请号：US16224903

申请日：2018-12-19

申请人： FUJIFILM Corporation ,  THE UNIVERSITY OF TOKYO

发明人： Eiji FUKUZAKI ,  Tetsuya WATANABE ,  Yoshihisa USAMI ,  Yukio TANI ,  Toshihiro OKAMOTO ,  Junichi TAKEYA

IPC分类号： H01L51/00 ,  H01L51/05 ,  H01L51/10 ,  C07D471/22

摘要： Provided are an organic thin film transistor, an organic semiconductor film, a compound, an organic thin film transistor-forming composition, and a method of manufacturing the organic thin film transistor. The organic thin film transistor includes the organic semiconductor film. The organic semiconductor film includes a compound represented by a specific formula. The organic semiconductor film, the compound, and the organic thin film transistor-forming composition can be preferably used in the organic thin film transistor. The method of manufacturing the organic thin film transistor includes a step of forming an organic semiconductor film by applying the organic thin film transistor-forming composition to a substrate.

公开(公告)号：US20180155338A1

公开(公告)日：2018-06-07

申请号：US15887174

申请日：2018-02-02

申请人： FUJIFILM Corporation ,  THE UNIVERSITY OF TOKYO

发明人： Hiroaki TSUYAMA ,  Masashi KOYANAGI ,  Eiji FUKUZAKI ,  Masatoshi YUMOTO ,  Yoshihisa USAMI ,  Tetsuya WATANABE ,  Toshihiro OKAMOTO ,  Junichi TAKEYA

IPC分类号： C07D471/02 ,  H01L51/00 ,  H01L29/45 ,  H01L29/768

CPC分类号： C07D471/02 ,  C07D495/14 ,  C09B57/08 ,  H01L29/454 ,  H01L29/768 ,  H01L29/786 ,  H01L51/0056 ,  H01L51/05

摘要： An object of the present invention is to provide an organic thin film transistor that has an organic semiconductor film manufactured by using a compound having excellent solubility to an organic solvent and that has excellent carrier mobility, a novel compound, an organic thin film transistor material, an organic semiconductor film, an organic thin film transistor composition, and a method of manufacturing an organic thin film transistor using this. The organic thin film transistor according to the present invention has an organic semiconductor film containing a compound represented by Formula (1).

公开(公告)号：US20180159048A1

公开(公告)日：2018-06-07

申请号：US15884512

申请日：2018-01-31

申请人： FUJIFILM Corporation ,  THE UNIVERSITY OF TOKYO

发明人： Masashi KOYANAGI ,  Hiroaki TSUYAMA ,  Eiji FUKUZAKI ,  Yoshihisa USAMI ,  Tetsuya WATANABE ,  Takashi GOTO ,  Toshihiro OKAMOTO ,  Junichi TAKEYA

IPC分类号： H01L51/00 ,  C07D517/04

CPC分类号： H01L51/0071 ,  C07D517/04 ,  C09B57/00 ,  C09B69/008 ,  H01L29/786 ,  H01L51/0003 ,  H01L51/0005 ,  H01L51/0068 ,  H01L51/05 ,  H01L51/0545 ,  H01L51/0558

摘要： An object of the present invention is to provide a compound which, when used for organic semiconductor films in organic thin-film transistors, makes the organic thin-film transistors exhibit a high carrier mobility, a material for an organic thin-film transistor for which the compound is used, a composition for an organic thin-film transistor, an organic thin-film transistor and a method for manufacturing the same, and an organic semiconductor film.An organic thin-film transistor of the present invention contains a compound represented by General Formula (1) in an organic semiconductor film (organic semiconductor layer) thereof.

公开(公告)号：US20180159043A1

公开(公告)日：2018-06-07

申请号：US15884537

申请日：2018-01-31

申请人： FUJIFILM Corporation ,  THE UNIVERSITY OF TOKYO

发明人： Eiji FUKUZAKI ,  Hiroaki TSUYAMA ,  Masashi KOYANAGI ,  Yoshihisa USAMI ,  Tetsuya WATANABE ,  Toshihiro OKAMOTO ,  Junichi TAKEYA

IPC分类号： H01L51/00 ,  C07D495/16 ,  C07D517/16

摘要： An object of the present invention is to provide an organic thin film transistor having excellent carrier mobility and excellent atmospheric stability, a novel compound, an organic thin film transistor material, an organic semiconductor film, an organic thin film transistor composition, and a method of manufacturing an organic thin film transistor using this. The organic thin film transistor according to the present invention has an organic semiconductor film containing a compound represented by Formula (1) or (2).

公开(公告)号：US20210351363A1

公开(公告)日：2021-11-11

申请号：US17382961

申请日：2021-07-22

申请人： FUJIFILM Corporation ,  The University of Tokyo

发明人： Eiji FUKUZAKI ,  Tetsuya WATANABE ,  Yoshihisa USAMI ,  Yukio TANI ,  Toshihiro OKAMOTO ,  Junichi TAKEYA

IPC分类号： H01L51/00 ,  C07D471/22 ,  C07D471/06 ,  H01L29/786 ,  C07D491/22 ,  H01L51/10

摘要： Provided are an organic thin film transistor, an organic semiconductor film, a compound, an organic thin film transistor-forming composition, and a method of manufacturing the organic thin film transistor. The organic thin film transistor includes the organic semiconductor film. The organic semiconductor film includes a compound represented by a specific formula. The organic semiconductor film, the compound, and the organic thin film transistor-forming composition can be preferably used in the organic thin film transistor. The method of manufacturing the organic thin film transistor includes a step of forming an organic semiconductor film by applying the organic thin film transistor-forming composition to a substrate.

公开(公告)号：US20200028096A1

公开(公告)日：2020-01-23

申请号：US16588534

申请日：2019-09-30

申请人： FUJIFILM Corporation ,  THE UNIVERSITY OF TOKYO

发明人： Kenji SHIROKANE ,  Eiji FUKUZAKI ,  Yukio TANI ,  Fumiko TAMAKUNI ,  Yoshihisa USAMI ,  Tetsuya WATANABE ,  Toshihiro OKAMOTO ,  Junichi TAKEYA

IPC分类号： H01L51/00

摘要： An organic semiconductor element in which an organic semiconductor layer contains a compound of Formula (1) and/or a compound of Formula (2) or contains a polymer having a structure of any one of Formulae (9) and (10): in which X1 represents a nitrogen atom or CRa, rings A to D each represent a specific aromatic ring or an aromatic heterocyclic ring; Y1 represents an oxygen atom, a sulfur atom, CRb2, or NRc; Ra to Rc each represent hydrogen atoms or substituents; R1 and R2 each represent a to specific substituent; n represents 1 or 2; and * represents a bonding site.

公开(公告)号：US20190074452A1

公开(公告)日：2019-03-07

申请号：US16180118

申请日：2018-11-05

申请人： FUJIFILM Corporation ,  The University of Tokyo

发明人： Hiroaki TSUYAMA ,  Kimiatsu NOMURA ,  Yoshihisa USAMI ,  Masatoshi YUMOTO ,  Tetsu KITAMURA ,  Masashi KOYANAGI ,  Tetsuya WATANABE ,  Toshihiro OKAMOTO ,  Junichi TAKEYA

IPC分类号： H01L51/00 ,  C09D5/24 ,  C07D495/14 ,  C09B57/00 ,  H01L51/05

摘要： Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100° C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.)

公开(公告)号：US20170012220A1

公开(公告)日：2017-01-12

申请号：US15274016

申请日：2016-09-23

申请人： FUJIFILM Corporation ,  The University of Tokyo

发明人： Hiroaki TSUYAMA ,  Kimiatsu NOMURA ,  Yoshihisa USAMI ,  Masatoshi YUMOTO ,  Tetsu KITAMURA ,  Masashi KOYANAGI ,  Tetsuya WATANABE ,  Toshihiro OKAMOTO ,  Junichi TAKEYA

IPC分类号： H01L51/00 ,  C07D495/14 ,  C09D5/24

CPC分类号： H01L51/0074 ,  C07D495/14 ,  C09B57/00 ,  C09D5/24 ,  H01L51/0007 ,  H01L51/0558 ,  Y02E10/549 ,  Y02P70/521

摘要： Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100° C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.)

摘要翻译： （式（2）中，R 11和R 12各自独立地表示氢原子，烷基，烯基，炔基或烷氧基，可以具有取代基，式（2）中的芳香族部分可以 被卤素原子取代）

公开(公告)号：US20240025901A1

公开(公告)日：2024-01-25

申请号：US18351752

申请日：2023-07-13

申请人： FUJIFILM Corporation ,  The University of Tokyo

发明人： Hiroki SUGIURA ,  Yukio TANI ,  Tetsuya MATSUSHITA ,  Tetsuya WATANABE ,  Toshihiro OKAMOTO

IPC分类号： C07D471/22 ,  C07D495/22 ,  C07D513/22

CPC分类号： C07D471/22 ,  C07D495/22 ,  C07D513/22

摘要： A first object of the present invention is to provide a method for producing a cyclic imide compound with high yield and high purity. A second object of the present invention is to provide a composition that can be used in the method for producing a cyclic imide compound with high yield and high purity. A third object of the present invention is to provide an intermediate compound that can be used in the method for producing a cyclic imide compound with high yield and high purity. The method for producing a cyclic imide compound according to the present invention includes reacting a compound represented by formula (1) below with at least one amine compound to obtain a compound represented by formula (2) below.