公开(公告)号：US09011638B2

公开(公告)日：2015-04-21

申请号：US14220060

申请日：2014-03-19

申请人： Epistar Corporation

发明人： Chen-Ke Hsu ,  Liang Sheng Chi ,  Chun-Chang Chen ,  Win-Jim Su ,  Hsu-Cheng Lin ,  Mei-Ling Tsai ,  Yi Lung Liu ,  Chen Ou

IPC分类号： B32B38/10 ,  H01L21/66 ,  H01L21/67

CPC分类号： H01L22/20 ,  H01L21/67005 ,  H01L21/67132 ,  H01L21/67271 ,  Y10S156/93 ,  Y10S156/941 ,  Y10T156/1111 ,  Y10T156/1116 ,  Y10T156/1158 ,  Y10T156/1168 ,  Y10T156/1179 ,  Y10T156/1195 ,  Y10T156/1917 ,  Y10T156/1933 ,  Y10T156/1983

摘要： A method of chip sorting comprises providing a chip holder having a first surface; providing multiple chips on the first surface; providing a chip receiver having a second surface, wherein the second surface faces the first surface; attaching the multiple chips to the second surface; decreasing an adhesion between the multiple chips and the first surface; and separating the multiple chips from the first surface after the step of decreasing the adhesion between the multiple chips and the first surface.

摘要翻译： 一种芯片分选方法包括：提供具有第一表面的芯片保持器; 在第一表面上提供多个芯片; 提供具有第二表面的芯片接收器，其中所述第二表面面向所述第一表面; 将多个芯片附接到第二表面; 降低多个芯片和第一表面之间的粘合力; 以及在减少所述多个芯片与所述第一表面之间的粘合力的步骤之后，从所述第一表面分离所述多个芯片。

公开(公告)号：US20140367015A1

公开(公告)日：2014-12-18

申请号：US13920541

申请日：2013-06-18

申请人： Infineon Technologies AG

发明人： Mathias VAUPEL ,  Kurt GEHRING ,  Kian Pin QUECK

IPC分类号： H01L21/78 ,  H01L21/683 ,  H01L21/67

CPC分类号： H01L21/78 ,  H01L21/67017 ,  H01L21/67092 ,  H01L21/67098 ,  H01L21/67132 ,  H01L21/6836 ,  H01L2221/68322 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68368 ,  H01L2221/68381 ,  Y10S156/93 ,  Y10S156/941 ,  Y10T156/10 ,  Y10T156/1121 ,  Y10T156/1126 ,  Y10T156/1137 ,  Y10T156/1153 ,  Y10T156/1911 ,  Y10T156/1922 ,  Y10T156/1939

摘要： An embodiment method for separating semiconductor devices from a wafer comprises using a carrier which acts an adjustable adhesive force upon the semiconductor devices and removing the semiconductor devices from the carrier by applying a mechanical or acoustical impulse to the carrier.

摘要翻译： 用于从晶片分离半导体器件的实施例方法包括使用对半导体器件施加可调节的粘合力的载体，并通过对载体施加机械或声学冲击而从载体上移除半导体器件。

公开(公告)号：US08789569B2

公开(公告)日：2014-07-29

申请号：US12581274

申请日：2009-10-19

申请人： Kazuki Noda ,  Masaru Iwasawa

发明人： Kazuki Noda ,  Masaru Iwasawa

IPC分类号： B32B37/00

CPC分类号： B32B43/006 ,  B32B2457/14 ,  H01L21/2007 ,  H01L21/6835 ,  H01L21/6836 ,  H01L2221/68327 ,  H01L2221/68381 ,  H01L2221/6839 ,  Y10S156/93 ,  Y10T156/1111 ,  Y10T156/1158 ,  Y10T156/1917 ,  Y10T156/1944

摘要： Provided is a laminated body comprising a substrate to be ground and a support, where the substrate is ground to a very small thickness and can then be separated from the support without damaging the substrate. One embodiment of the present invention is a laminated body comprising a substrate to be ground, a joining layer in contact with the substrate to be ground, a photothermal conversion layer comprising a light absorbing agent and a heat decomposable resin, and a light transmitting support. After grinding the substrate surface which is opposite that in contact with the joining layer, the laminated body is irradiated through the light transmitting layer and the photothermal conversion layer decomposes to separate the substrate and the light transmitting support.

摘要翻译： 提供了一种层叠体，其包括待研磨的基底和支撑体，其中基底被研磨成非常小的厚度，然后可以与支撑体分离而不损坏基底。 本发明的一个实施方案是一种层叠体，其包括待研磨的基材，与待研磨基材接触的接合层，包含光吸收剂和可热分解树脂的光热转换层和透光性支持体。 在与接合层接触的基板表面研磨后，通过透光层照射层叠体，分解光电转换层，分离基板和透光支撑体。

公开(公告)号：US20140202627A1

公开(公告)日：2014-07-24

申请号：US14220060

申请日：2014-03-19

申请人： Epistar Corporation

发明人： Chen-Ke HSU ,  Liang Sheng CHI ,  Chun-Chang CHEN ,  Win-Jim SU ,  Hsu-Cheng LIN ,  Mei-Ling TSAI ,  Yi Lung LIU ,  Chen OU

IPC分类号： H01L21/67 ,  H01L21/66

CPC分类号： H01L22/20 ,  H01L21/67005 ,  H01L21/67132 ,  H01L21/67271 ,  Y10S156/93 ,  Y10S156/941 ,  Y10T156/1111 ,  Y10T156/1116 ,  Y10T156/1158 ,  Y10T156/1168 ,  Y10T156/1179 ,  Y10T156/1195 ,  Y10T156/1917 ,  Y10T156/1933 ,  Y10T156/1983

摘要： A method of chip sorting comprises providing a chip holder having a first surface; providing multiple chips on the first surface; providing a chip receiver having a second surface, wherein the second surface faces the first surface; attaching the multiple chips to the second surface; decreasing an adhesion between the multiple chips and the first surface; and separating the multiple chips from the first surface after the step of decreasing the adhesion between the multiple chips and the first surface.

摘要翻译： 一种芯片分选方法包括：提供具有第一表面的芯片保持器; 在第一表面上提供多个芯片; 提供具有第二表面的芯片接收器，其中所述第二表面面向所述第一表面; 将多个芯片附接到第二表面; 降低多个芯片和第一表面之间的粘合力; 以及在减少所述多个芯片与所述第一表面之间的粘合力的步骤之后，从所述第一表面分离所述多个芯片。

公开(公告)号：US20130139972A1

公开(公告)日：2013-06-06

申请号：US13760696

申请日：2013-02-06

申请人： EV Group GmbH

发明人： Erich Thallner

IPC分类号： B32B43/00

CPC分类号： B32B43/006 ,  H01L21/67092 ,  Y10S156/93 ,  Y10S156/931 ,  Y10S156/932 ,  Y10S156/941 ,  Y10S156/943 ,  Y10T156/1111 ,  Y10T156/19 ,  Y10T156/1911 ,  Y10T156/1917 ,  Y10T156/1944 ,  Y10T156/1967

摘要： Method for stripping a wafer from a carrier that is connected to the wafer by an interconnect layer. The method includes the steps of accommodating the carrier-wafer combination on a receiving means, breaking the connection provided by the interconnect layer by a connection release means, and stripping the wafer from the carrier, or stripping the carrier from the wafer by stripping means.

摘要翻译： 从通过互连层连接到晶片的载体剥离晶片的方法。 该方法包括以下步骤：将载体 - 晶片组合容纳在接收装置上，通过连接释放装置断开由互连层提供的连接，以及从载体剥离晶片，或通过剥离装置从晶片剥离载体。

公开(公告)号：US20130062020A1

公开(公告)日：2013-03-14

申请号：US13417934

申请日：2012-03-12

申请人： Michael John Ries ,  Jeffrey L. Libbert ,  Dale A. Witte

发明人： Michael John Ries ,  Jeffrey L. Libbert ,  Dale A. Witte

IPC分类号： B32B38/10

CPC分类号： H01L21/76254 ,  B23B49/006 ,  B32B43/006 ,  C09J2205/302 ,  H01L21/67092 ,  Y10S156/93 ,  Y10S156/941 ,  Y10T156/1168 ,  Y10T156/1174 ,  Y10T156/1184 ,  Y10T156/19 ,  Y10T156/195 ,  Y10T156/1956 ,  Y10T156/1978

摘要： Systems and methods are provided for mechanically cleaving a bonded wafer pair by controlling the rate of cleaving. This controlled rate of cleaving results in a reduction or elimination of non-uniform thickness variations in the cleaved surface of the resulting SOI wafer. One embodiment uses flexible chucks attached to the faces of the wafers and actuators attached to the flexible chucks to cleave the bonded wafer pair. Other embodiments also use rollers in contact with the surfaces to control the rate of cleaving.

摘要翻译： 提供了通过控制切割速度来机械地切割接合的晶片对的系统和方法。 这种受控的切割速率导致所得SOI晶片的切割表面的不均匀厚度变化的减小或消除。 一个实施例使用附接到晶片的表面的柔性卡盘和附接到柔性卡盘的致动器来切割结合的晶片对。 其他实施例还使用与表面接触的辊来控制裂开速率。

公开(公告)号：US20120285628A1

公开(公告)日：2012-11-15

申请号：US13519259

申请日：2010-11-22

申请人： Hiroshi Katsumi ,  Yukinori Takada

发明人： Hiroshi Katsumi ,  Yukinori Takada

IPC分类号： H05K13/02 ,  B32B38/10 ,  B65H23/00

CPC分类号： H05K13/0417 ,  H05K13/021 ,  H05K13/0408 ,  H05K13/0419 ,  Y10S156/93 ,  Y10S156/941 ,  Y10T156/1994

摘要： A plurality of tape feeders are held by a feeder holding device in a state in which component supply portions of the respective tape feeders are arranged in a plurality of rows each extending along a plurality of straight lines parallel to each other in one plane. Each of the plurality of tape feeders is separable into first portions and second portions, the first portions include: a reel holding portion configured to hold a reel on which a taped component is wound; the component supply portion; a taped-component guide portion configured to guide, to the component supply portion, the taped component drawn from the reel, the second portions respectively including taped-component feeding devices each for feeding the taped component to the component supply portion.

摘要翻译： 多个带料供给器由馈送器保持装置保持，其中各个带式馈送器的部件供应部分沿着在一个平面中彼此平行的多条直线延伸的多行布置。 所述多个带料供给器中的每一个可分离成第一部分和第二部分，所述第一部分包括：卷轴保持部分，其构造成保持卷绕有卷带部件的卷轴; 部件供给部; 被配置为将从卷轴拉出的带状部件引导到部件供给部的带状部引导部，第二部分分别包括用于将带状部件供给到部件供给部的带状部件供给装置。

公开(公告)号：US20120111496A1

公开(公告)日：2012-05-10

申请号：US13285408

申请日：2011-10-31

申请人： Maxime Cadotte ,  Luc Guerin ,  Van Thanh Truong ,  Steve Whitehead

发明人： Maxime Cadotte ,  Luc Guerin ,  Van Thanh Truong ,  Steve Whitehead

IPC分类号： B32B38/10 ,  B29C35/08

CPC分类号： H01L24/799 ,  B08B7/0042 ,  B23K2103/42 ,  B23K2103/50 ,  B32B38/0008 ,  B32B38/10 ,  B32B43/006 ,  B32B2457/14 ,  H01L21/02076 ,  H01L21/31127 ,  H01L24/27 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/05442 ,  H01L2924/07025 ,  H01L2924/12042 ,  H01L2924/3025 ,  H01L2924/40501 ,  Y10S156/93 ,  Y10S156/941 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/1917 ,  H01L2924/00

摘要： A method for laser ashing of polyimide for a semiconductor manufacturing process using a structure, the structure comprising a supporting material attached to a semiconductor chip by a polyimide glue, includes releasing the supporting material from the polyimide glue, such that the polyimide glue remains on the semiconductor chip; and ashing the polyimide glue on the semiconductor chip using an ablating laser.

摘要翻译： 一种使用结构的半导体制造方法的聚酰亚胺的激光灰化方法，包括通过聚酰亚胺胶粘在半导体芯片上的支撑材料的结构，包括从聚酰亚胺胶释放支撑材料，使得聚酰亚胺胶保持在 半导体芯片; 并使用烧蚀激光将半导体芯片上的聚酰亚胺胶粉化。

公开(公告)号：US20110294306A1

公开(公告)日：2011-12-01

申请号：US13207304

申请日：2011-08-10

申请人： Francois J. Henley ,  Nathan W. Cheung

发明人： Francois J. Henley ,  Nathan W. Cheung

IPC分类号： H01L21/263

CPC分类号： H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/2658 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

摘要： A method for forming a multi-material thin film includes providing a multi-material donor substrate comprising single crystal silicon and an overlying film comprising GaN or SiC. Energetic particles are introduced through a surface of the multi-material donor substrate to a selected depth within the single crystal silicon. The method includes providing energy to a selected region of the donor substrate to initiate a controlled cleaving action in the donor substrate. Then, a cleaving action is made using a propagating cleave front to free a multi-material film from a remaining portion of the donor substrate, the multi-material film comprising single crystal silicon and the overlying film.

摘要翻译： 一种用于形成多材料薄膜的方法包括提供包括单晶硅的多材料供体衬底和包括GaN或SiC的上覆膜。 能量粒子通过多材料供体衬底的表面引入单晶硅内的选定深度。 该方法包括向施主衬底的选定区域提供能量，以在施主衬底中开始受控的切割作用。 然后，使用传播劈裂前端从施主衬底的剩余部分释放多材料膜，所述多材料膜包括单晶硅和上覆膜。

公开(公告)号：US08012852B2

公开(公告)日：2011-09-06

申请号：US12789361

申请日：2010-05-27

申请人： Francois J. Henley ,  Nathan W. Cheung

发明人： Francois J. Henley ,  Nathan W. Cheung

IPC分类号： H01L21/30

CPC分类号： H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

摘要： A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

摘要翻译： 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有将能量粒子（22）通过供体衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对较高的浓度以限定施主衬底材料（12） 高于所选深度。 能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，从而将供体材料从剩余的 部分供体基质。