发明申请
- 专利标题： CONTROLLED PROCESS AND RESULTING DEVICE
- 专利标题（中）： 控制过程和结果设备
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申请号： US13207304申请日： 2011-08-10
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公开(公告)号： US20110294306A1公开(公告)日： 2011-12-01
- 发明人: Francois J. Henley , Nathan W. Cheung
- 申请人： Francois J. Henley , Nathan W. Cheung
- 申请人地址： US CA San Jose
- 专利权人： Silicon Genesis Corporation
- 当前专利权人： Silicon Genesis Corporation
- 当前专利权人地址： US CA San Jose
- 主分类号： H01L21/263
- IPC分类号： H01L21/263
摘要：
A method for forming a multi-material thin film includes providing a multi-material donor substrate comprising single crystal silicon and an overlying film comprising GaN or SiC. Energetic particles are introduced through a surface of the multi-material donor substrate to a selected depth within the single crystal silicon. The method includes providing energy to a selected region of the donor substrate to initiate a controlled cleaving action in the donor substrate. Then, a cleaving action is made using a propagating cleave front to free a multi-material film from a remaining portion of the donor substrate, the multi-material film comprising single crystal silicon and the overlying film.
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