公开(公告)号：US07776717B2

公开(公告)日：2010-08-17

申请号：US11841970

申请日：2007-08-20

申请人： Francois J. Henley ,  Nathan W. Cheung

发明人： Francois J. Henley ,  Nathan W. Cheung

IPC分类号： H01L21/30

CPC分类号： H01L21/76254 ,  B81C1/0038 ,  B81C2201/0191 ,  H01L21/2007

摘要： A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

公开(公告)号：US07410887B2

公开(公告)日：2008-08-12

申请号：US11627920

申请日：2007-01-26

申请人： Francois J. Henley ,  Nathan W. Cheung

发明人： Francois J. Henley ,  Nathan W. Cheung

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

摘要： A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

摘要翻译： 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有将能量粒子（22）通过供体衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对较高的浓度以限定施主衬底材料（12） 高于所选深度。 能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，从而将供体材料从剩余的 部分供体基质。

公开(公告)号：US07371660B2

公开(公告)日：2008-05-13

申请号：US11281042

申请日：2005-11-16

申请人： Francois J. Henley ,  Nathan W. Cheung

发明人： Francois J. Henley ,  Nathan W. Cheung

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

摘要： A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

公开(公告)号：US07160790B2

公开(公告)日：2007-01-09

申请号：US10644644

申请日：2003-08-19

申请人： Francois J. Henley ,  Nathan W. Cheung

发明人： Francois J. Henley ,  Nathan W. Cheung

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

摘要： A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

摘要翻译： 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有将能量粒子（22）通过供体衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对较高的浓度以限定施主衬底材料（12） 高于所选深度。 能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，从而将供体材料从剩余的 部分供体基质。

公开(公告)号：US06790747B2

公开(公告)日：2004-09-14

申请号：US10268918

申请日：2002-10-09

申请人： Francois J. Henley ,  Nathan W. Cheung

发明人： Francois J. Henley ,  Nathan W. Cheung

IPC分类号： H01L2130

CPC分类号： H01L21/26506 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2658 ,  H01L21/76254

摘要： A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a stressed region in a selected manner at a selected depth (20) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

摘要翻译： 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有以选定的方式在表面下方的选定深度（20）处形成受应力区域的步骤。 诸如加压流体的能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此所述切割动作提供扩张切割前缘以释放供体 来自供体衬底的剩余部分的材料。

公开(公告)号：US06458672B1

公开(公告)日：2002-10-01

申请号：US09705347

申请日：2000-11-02

申请人： Francois J. Henley ,  Nathan W. Cheung

发明人： Francois J. Henley ,  Nathan W. Cheung

IPC分类号： H01L2120

CPC分类号： H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

摘要： A method for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate. A step of increasing a built-in energy state of the substrate is also included.

摘要翻译： 一种从供体衬底（10）形成材料（12）的膜的方法。 该技术具有将能量粒子（22）通过供体衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对较高的浓度以限定施主衬底材料（12） 高于所选深度。 能量源被引导到供体衬底的选定区域，以在所选择的深度（20）处引发衬底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，以使剩余的所述供体材料释放 部分供体基质。 还包括增加衬底的内置能量状态的步骤。

公开(公告)号：US06290804B1

公开(公告)日：2001-09-18

申请号：US09026793

申请日：1998-02-20

申请人： Francois J. Henley ,  Nathan W. Cheung

发明人： Francois J. Henley ,  Nathan W. Cheung

IPC分类号： B32B3114

CPC分类号： H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

摘要： A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) in a selected manner through a surface of a donor substrate (10) to form a pattern at a selected depth (20) underneath the surface. The particles have a concentration sufficiently high to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

摘要翻译： 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有以选择的方式通过施主衬底（10）的表面引入能量粒子（22）以在表面下方的选定深度（20）处形成图案的步骤。 颗粒具有足够高的浓度以在所选择的深度上限定施主衬底材料（12）。 能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，从而将供体材料从剩余的 部分供体基质。

公开(公告)号：US06048411A

公开(公告)日：2000-04-11

申请号：US25966

申请日：1998-02-19

申请人： Francois J. Henley ,  Nathan W. Cheung

发明人： Francois J. Henley ,  Nathan W. Cheung

IPC分类号： B24C1/00 ,  B26F3/00 ,  B26F3/02 ,  B32B5/16 ,  B81C1/00 ,  H01L21/00 ,  H01L21/18 ,  H01L21/20 ,  H01L21/22 ,  H01L21/223 ,  H01L21/265 ,  H01L21/30 ,  H01L21/301 ,  H01L21/302 ,  H01L21/304 ,  H01L21/36 ,  H01L21/38 ,  H01L21/425 ,  H01L21/44 ,  H01L21/46 ,  H01L21/461 ,  H01L21/48 ,  H01L21/50 ,  H01L21/762 ,  H01L21/78 ,  H01L21/8238 ,  H01L29/06

CPC分类号： H01L21/187 ,  B81C1/0038 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  B81C2201/0191 ,  B81C2201/0192 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893

摘要： A hybrid silicon-on-silicon substrate. A thin film (2101) of single-crystal silicon is bonded to a target wafer (46). A high-quality bond is formed between the thin film and the target wafer during a high-temperature annealing process. It is believed that the high-temperature annealing process forms covalent bonds between the layers at the interface (2305). The resulting hybrid wafer is suitable for use in integrated circuit manufacturing processes, similar to wafers with an epitaxial layer.

公开(公告)号：US6010579A

公开(公告)日：2000-01-04

申请号：US26035

申请日：1998-02-19

申请人： Francois J. Henley ,  Nathan W. Cheung

发明人： Francois J. Henley ,  Nathan W. Cheung

IPC分类号： B24C1/00 ,  B26F3/00 ,  B26F3/02 ,  B32B5/16 ,  B81C1/00 ,  H01L21/00 ,  H01L21/18 ,  H01L21/20 ,  H01L21/22 ,  H01L21/223 ,  H01L21/265 ,  H01L21/30 ,  H01L21/301 ,  H01L21/302 ,  H01L21/304 ,  H01L21/36 ,  H01L21/38 ,  H01L21/425 ,  H01L21/44 ,  H01L21/46 ,  H01L21/461 ,  H01L21/48 ,  H01L21/50 ,  H01L21/762 ,  H01L21/78 ,  H01L21/8238

CPC分类号： H01L21/187 ,  B81C1/0038 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  B81C2201/0191 ,  B81C2201/0192 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

摘要： A donor substrate (10) for forming multiple thin films of material (12). In one embodiment, a first thin film of material is separated or cleaved from a donor substrate by introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define donor substrate material (12) above the selected depth. Energy is provided to a selected region of the substrate to cleave a thin film of material from the donor substrate. Particles are introduced again into the donor substrate underneath a fresh, or cleaved, surface of the donor substrate. A second thin film of material is then cleaved from the donor substrate.

摘要翻译： 一种用于形成材料（12）的多个薄膜的施主衬底（10）。 在一个实施例中，通过将能量粒子（22）通过供体衬底（10）的表面引导到表面下方的所选择的深度（20），将第一薄膜材料从供体衬底分离或切割，其中颗粒具有 在所选择的深度上限定施主衬底材料（12）的相对高的浓度。 能量被提供到衬底的选定区域以从施主衬底切割材料薄膜。 将颗粒再次引入供体底物的供体底物的新鲜或切割的表面下方。 然后从供体基材上切下第二薄膜材料。

公开(公告)号：US07781305B2

公开(公告)日：2010-08-24

申请号：US12080114

申请日：2008-03-31

申请人： Francois J. Henley ,  Nathan W. Cheung

发明人： Francois J. Henley ,  Nathan W. Cheung

IPC分类号： H01L21/30

CPC分类号： H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

摘要： A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

摘要翻译： 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有将能量粒子（22）通过供体衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对较高的浓度以限定施主衬底材料（12） 高于所选深度。 能量源被引导到供体衬底的选定区域，以在所选择的深度（20）处引发衬底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，以使剩余的所述供体材料释放 部分供体基质。