SEMICONDUCTOR CHIP DELAMINATION DEVICE AND CONTROL METHOD THEREFOR

    公开(公告)号:US20230162997A1

    公开(公告)日:2023-05-25

    申请号:US17916992

    申请日:2021-05-20

    Inventor: Jae Won CHO

    Abstract: The present invention provides a semiconductor chip delamination device for peeling off a protective film attached to one surface of a semiconductor chip, including: a stage unit (400) configured to allow a ring frame, in which the semiconductor chip having the protective film attached thereto is disposed, to be seated thereon; a delamination feeding unit (300) configured to feed a delamination seal contactable with the protective film so as to peel off the protective film from the semiconductor chip; a covering unit (500, 600) configured to allow the delamination seal to cover the semiconductor chip such that the delamination seal comes into close contact with the protective film; and a delaminating unit (700) configured to peel off, from the semiconductor chip, the delamination seal disposed to cover the semiconductor chip having the protective film disposed on one surface thereof, and provides a method of controlling the semiconductor chip delamination device.

    TAPE-BASED EPITAXIAL LIFT OFF APPARATUSES AND METHODS
    5.
    发明申请
    TAPE-BASED EPITAXIAL LIFT OFF APPARATUSES AND METHODS 审中-公开
    基于胶带的外延提升装置和方法

    公开(公告)号:US20160049334A1

    公开(公告)日:2016-02-18

    申请号:US14861821

    申请日:2015-09-22

    Abstract: Embodiments of the invention generally relate to apparatuses and methods for producing epitaxial thin films and devices by epitaxial lift off (ELO) processes. In one embodiment, a method for forming thin film devices during an ELO process is provided which includes coupling a plurality of substrates to an elongated support tape, wherein each substrate contains an epitaxial film disposed over a sacrificial layer disposed over a wafer, exposing the substrates to an etchant during an etching process while moving the elongated support tape, and etching the sacrificial layers and peeling the epitaxial films from the wafers while moving the elongated support tape. Embodiments also include several apparatuses, continuous-type as well as a batch-type apparatuses, for forming the epitaxial thin films and devices, including an apparatus for removing the support tape and epitaxial films from the wafers on which the epitaxial films were grown.

    Abstract translation: 本发明的实施例一般涉及通过外延剥离(ELO)工艺制造外延薄膜和器件的装置和方法。 在一个实施例中,提供了一种在ELO工艺期间形成薄膜器件的方法,其包括将多个衬底耦合到细长支撑带,其中每个衬底包含设置在设置在晶片上方的牺牲层上的外延膜, 在移动细长的支撑带的同时蚀刻过程中的蚀刻剂,以及蚀刻牺牲层并在移动细长支撑带的同时从晶片剥离外延膜。 实施例还包括几种用于形成外延薄膜和器件的连续型和间歇式器件的装置,包括用于从其上生长外延膜的晶片去除支撑带和外延膜的装置。

    MOUNTED WAFER MANUFACTURING METHOD
    9.
    发明申请
    MOUNTED WAFER MANUFACTURING METHOD 审中-公开
    安装波形制造方法

    公开(公告)号:US20120160397A1

    公开(公告)日:2012-06-28

    申请号:US13312997

    申请日:2011-12-07

    Abstract: A liquid adhesive is applied to a circuit surface of a semiconductor wafer. A carrier is joined to a surface of the semiconductor wafer coated with the adhesive. A rear face of the semiconductor wafer is ground while the carrier is held. The semiconductor wafer is supported on a ring frame via a support adhesive tape. The carrier is removed from the semiconductor wafer. The adhesive tape is separated integrally with the film-like adhesive from the semiconductor wafer through joining a separation tape having a width larger than a diameter of the semiconductor wafer to the adhesive on the semiconductor wafer and then separating the separation tape.

    Abstract translation: 将液体粘合剂施加到半导体晶片的电路表面。 载体与涂覆有粘合剂的半导体晶片的表面接合。 半导体晶片的后表面在保持载体时被研磨。 半导体晶片通过支撑胶带支撑在环形框架上。 载体从半导体晶片去除。 通过将具有大于半导体晶片的直径的宽度的分离带与半导体晶片上的粘合剂接合,将粘合带与半导体晶片与膜状粘合剂一体地分离,然后分离分离带。

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