公开(公告)号：US20160049334A1

公开(公告)日：2016-02-18

申请号：US14861821

申请日：2015-09-22

Applicant: ALTA DEVICES, Inc.

Inventor： Thomas GMITTER ,  Gang HE ,  Melissa ARCHER ,  Andreas HEGEDUS

IPC: H01L21/78 ,  H01L21/306 ,  H01L31/18 ,  H01L21/683

CPC classification number: H01L21/7813 ,  H01L21/30612 ,  H01L21/67086 ,  H01L21/67092 ,  H01L21/67132 ,  H01L21/6835 ,  H01L21/6836 ,  H01L31/184 ,  H01L2221/68318 ,  H01L2221/68345 ,  H01L2221/68381 ,  H01L2221/6839

Abstract: Embodiments of the invention generally relate to apparatuses and methods for producing epitaxial thin films and devices by epitaxial lift off (ELO) processes. In one embodiment, a method for forming thin film devices during an ELO process is provided which includes coupling a plurality of substrates to an elongated support tape, wherein each substrate contains an epitaxial film disposed over a sacrificial layer disposed over a wafer, exposing the substrates to an etchant during an etching process while moving the elongated support tape, and etching the sacrificial layers and peeling the epitaxial films from the wafers while moving the elongated support tape. Embodiments also include several apparatuses, continuous-type as well as a batch-type apparatuses, for forming the epitaxial thin films and devices, including an apparatus for removing the support tape and epitaxial films from the wafers on which the epitaxial films were grown.

Abstract translation: 本发明的实施例一般涉及通过外延剥离（ELO）工艺制造外延薄膜和器件的装置和方法。 在一个实施例中，提供了一种在ELO工艺期间形成薄膜器件的方法，其包括将多个衬底耦合到细长支撑带，其中每个衬底包含设置在设置在晶片上方的牺牲层上的外延膜， 在移动细长的支撑带的同时蚀刻过程中的蚀刻剂，以及蚀刻牺牲层并在移动细长支撑带的同时从晶片剥离外延膜。 实施例还包括几种用于形成外延薄膜和器件的连续型和间歇式器件的装置，包括用于从其上生长外延膜的晶片去除支撑带和外延膜的装置。

公开(公告)号：US20150279741A1

公开(公告)日：2015-10-01

申请号：US14723223

申请日：2015-05-27

Applicant: ALTA DEVICES, Inc.

Inventor： Melissa ARCHER ,  Harry ATWATER ,  Thomas GMITTER ,  Gang HE ,  Andreas HEGEDUS ,  Gregg HIGASHI ,  Stewart SONNENFELDT

IPC: H01L21/78 ,  H01L21/306 ,  H01L21/02 ,  H01L21/683

CPC classification number: H01L21/7813 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/30612 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/7806 ,  H01L2221/6835 ,  H01L2221/68381

Abstract: Embodiments of the invention generally relate to epitaxial lift off (ELO) thin films and devices and methods used to form such films and devices. In one embodiment, a method for forming an ELO thin film is provided which includes depositing an epitaxial material over a sacrificial layer on a substrate, adhering a flattened, pre-curved support handle onto the epitaxial material, and removing the sacrificial layer during an etching process. The etching process includes bending the pre-curved support handle to have substantial curvature while peeling the epitaxial material from the substrate and forming an etch crevice therebetween. Compression is maintained within the epitaxial material during the etching process. The flattened, pre-curved support handle may be formed by flattening a pre-curved support material.

公开(公告)号：US20140158307A1

公开(公告)日：2014-06-12

申请号：US14183349

申请日：2014-02-18

Applicant: ALTA DEVICES, INC,

Inventor： Brian BURROWS ,  Brian BROWN ,  Thomas GMITTER ,  Gang HE

IPC: H01L31/18 ,  H01L33/00

CPC classification number: H01L31/18 ,  B32B43/006 ,  B32B2457/00 ,  H01L21/67086 ,  H01L21/67303 ,  H01L21/67346 ,  H01L21/67757 ,  H01L21/7813 ,  H01L31/1892 ,  H01L33/005 ,  Y02E10/50 ,  Y10T29/49824 ,  Y10T156/1111 ,  Y10T156/1168 ,  Y10T156/1978

Abstract: An apparatus, system and method for performing ELO are disclosed. Device assemblies are contemporaneously etched in a stacked arrangement. Each device assembly may be placed in a respective tray, where the trays are overlapped and spaced apart from one another. In this manner, more device assemblies can be etched per unit area compared to conventional systems. Further, by stacking device assemblies during etching, the yield can be improved and/or the cost of the etch tank and associated hardware can be reduced.

Abstract translation: 公开了一种用于执行ELO的装置，系统和方法。 器件组件以堆叠的方式同时蚀刻。 每个设备组件可以放置在相应的托盘中，其中托盘重叠并且彼此间隔开。 以这种方式，与常规系统相比，每单位面积可以蚀刻更多的器件组件。 此外，通过在蚀刻期间堆叠器件组件，可以提高成品率和/或可以降低蚀刻槽和相关硬件的成本。

公开(公告)号：US20180209018A1

公开(公告)日：2018-07-26

申请号：US15934409

申请日：2018-03-23

Applicant: ALTA DEVICES, INC.

Inventor： Thomas GMITTER ,  Gang HE ,  Melissa ARCHER ,  Siew NEO

IPC: C22C29/00 ,  C30B33/06 ,  C30B33/08 ,  C30B29/00 ,  C30B29/42 ,  C30B29/40 ,  C30B33/10

CPC classification number: C22C29/00 ,  C30B29/00 ,  C30B29/40 ,  C30B29/42 ,  C30B33/06 ,  C30B33/08 ,  C30B33/10

Abstract: Embodiments described herein provide processes for forming and removing epitaxial films and materials from growth wafers by epitaxial lift off (ELO) processes. In some embodiments, the growth wafer has edge surfaces with an off-axis orientation which is utilized during the ELO process. The off-axis orientation of the edge surface provides an additional variable for controlling the etch rate during the ELO process and therefore the etch front may be modulated to prevent the formation of high stress points which reduces or prevents stressing and cracking the epitaxial film stack. In one embodiment, the growth wafer is rectangular and has an edge surface with an off-axis orientation rotated by an angle greater than 0° and up to 90° relative to an edge orientation of at 0°.

公开(公告)号：US20180155808A1

公开(公告)日：2018-06-07

申请号：US15876001

申请日：2018-01-19

Applicant: ALTA DEVICES, INC.

Inventor： Thomas GMITTER ,  Gang HE ,  Melissa ARCHER ,  Siew NEO

IPC: C22C29/00 ,  C30B33/06 ,  C30B33/08 ,  C30B29/00 ,  C30B29/42 ,  C30B29/40 ,  C30B33/10

CPC classification number: C22C29/00 ,  C30B29/00 ,  C30B29/40 ,  C30B29/42 ,  C30B33/06 ,  C30B33/08 ,  C30B33/10

Abstract: Embodiments described herein provide processes for forming and removing epitaxial films and materials from growth wafers by epitaxial lift off (ELO) processes. In some embodiments, the growth wafer has edge surfaces with an off-axis orientation which is utilized during the ELO process. The off-axis orientation of the edge surface provides an additional variable for controlling the etch rate during the ELO process and therefore the etch front may be modulated to prevent the formation of high stress points which reduces or prevents stressing and cracking the epitaxial film stack. In one embodiment, the growth wafer is rectangular and has an edge surface with an off-axis orientation rotated by an angle greater than 0° and up to 90° relative to an edge orientation of at 0°.