POLYSILOXANE-CONTAINING TEMPORARY ADHESIVE COMPRISING HEAT-RESISTANT POLYMERIZATION INHIBITOR

    公开(公告)号:US20210130666A1

    公开(公告)日:2021-05-06

    申请号:US17052223

    申请日:2019-04-23

    Abstract: A temporary adhesive without the formation of voids between a support and a wafer. A temporary adhesive for separatably attaching a support to a circuit side of a wafer to process a rear surface of the wafer, the temporary adhesive including a component (A) that is cured by a hydrosilylation reaction; a polymerization inhibitor (B) having a 5% mass decrease temperature of 80° C. or higher as measured using a Tg-DTA; and a solvent (C). The component (A) may include a polysiloxane (A1) including a polyorganosiloxane (a1) containing a C1-10 alkyl group and a C2-10 alkenyl group, and a polyorganosiloxane (a2) containing a C1-10 alkyl group and a hydrogen atom; and a platinum group metal-based catalyst (A2). The polymerization inhibitor (B) may be a compound of formula (1): (wherein R7 and R8 are each a C6-40 aryl group, or a combination of a C1-10 alkyl group and a C6-40 aryl group).

    TEMPORARY ADHESIVE CONTAINING PHENYL GROUP-CONTAINING POLYSILOXANE

    公开(公告)号:US20200216731A1

    公开(公告)日:2020-07-09

    申请号:US16627993

    申请日:2018-07-05

    Abstract: An adhesive for separatably attaching a support to a circuit side of a wafer to process a rear surface of the wafer, the adhesive including a component (A) that is cured by a hydrosilylation reaction and a component (B) containing a phenyl group-containing polyorganosiloxane, wherein a ratio in % by mass of the component (A) to the component (B) is 95:5 to 30:70. A separation method including applying the adhesive onto a first body to form an adhesion layer, attaching a second body to the adhesion layer, heating the adhesion layer from a side of the first body to cure the adhesive to form a layered body, processing the layered body, and carrying out separation between the adhesion layer, and the first and second bodies. The processing may be polishing the rear surface of the wafer.

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