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公开(公告)号：US08845859B2
公开(公告)日：2014-09-30
申请号：US13417934
申请日：2012-03-12
IPC分类号： B32B38/10 , H01L21/762 , H01L21/67
CPC分类号： H01L21/76254 , B23B49/006 , B32B43/006 , C09J2205/302 , H01L21/67092 , Y10S156/93 , Y10S156/941 , Y10T156/1168 , Y10T156/1174 , Y10T156/1184 , Y10T156/19 , Y10T156/195 , Y10T156/1956 , Y10T156/1978
摘要： Systems and methods are provided for mechanically cleaving a bonded wafer pair by controlling the rate of cleaving. This controlled rate of cleaving results in a reduction or elimination of non-uniform thickness variations in the cleaved surface of the resulting SOI wafer. One embodiment uses flexible chucks attached to the faces of the wafers and actuators attached to the flexible chucks to cleave the bonded wafer pair. Other embodiments also use rollers in contact with the surfaces to control the rate of cleaving.
摘要翻译： 提供了通过控制切割速度来机械地切割接合的晶片对的系统和方法。 这种受控的切割速率导致所得SOI晶片的切割表面的不均匀厚度变化的减小或消除。 一个实施例使用附接到晶片的表面的柔性卡盘和附接到柔性卡盘的致动器来切割结合的晶片对。 其他实施例还使用与表面接触的辊来控制裂开速率。
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公开(公告)号：US20110159665A1
公开(公告)日：2011-06-30
申请号：US12974772
申请日：2010-12-21
申请人： Dale A. Witte , Jeffrey L. Libbert
发明人： Dale A. Witte , Jeffrey L. Libbert
IPC分类号： H01L21/30
CPC分类号： H01L21/78 , H01L21/76254 , Y10T428/24174
摘要： This invention generally relates to a process for making a multi-layered crystalline structure. The process includes implanting ions into a donor structure, bonding the implanted donor structure to a second structure to form a bonded structure, cleaving the bonded structure, and removing any residual portion of the donor structure from the finished multi-layered crystalline structure.
摘要翻译： 本发明一般涉及制造多层晶体结构的方法。 该方法包括将离子注入供体结构中，将注入的供体结构键合到第二结构以形成结合结构，切割结合的结构，以及从最终的多层晶体结构去除供体结构的任何残留部分。
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公开(公告)号：US6112738A
公开(公告)日：2000-09-05
申请号：US285337
申请日：1999-04-02
申请人： Dale A. Witte , Tracy Ragan
发明人： Dale A. Witte , Tracy Ragan
CPC分类号： B28D5/045 , B28D5/0064 , B28D5/007 , H01L23/544 , H01L2223/54406 , H01L2223/54413 , H01L2223/54433 , H01L2924/0002
摘要： Methods of slicing ingots of semiconductor material into wafers using a wire saw. The wire saw includes a wire that is movable in a forward direction and a reverse direction for slicing the ingots. The methods include defining an identification region of each wafer to be sliced from the ingots and aligning an alignment feature of the ingots in approximately the same position relative to the wire saw for each of the ingots. The identification region of the wafer is adapted for marking with an identification mark after slicing. The methods also include slicing the ingot into wafers with the wire saw. The slicing step includes moving the wire in the forward and reverse directions during slicing except when slicing in the identification region of each wafer and moving the wire only in the forward direction when slicing in the identification region of each wafer. In slicing the ingot into wafers, thickness variations relative to the size of the identification mark are reduced in the identification region.
摘要翻译： 使用线锯将半导体材料锭切成晶片的方法。 线锯包括可沿向前方向和相反方向移动的线，用于切割锭。 这些方法包括定义要从锭切片的每个晶片的识别区域，并且将每个晶锭相对于线锯大致相同位置的锭的对准特征对准。 晶片的识别区域适于在切片之后用识别标记进行标记。 这些方法还包括用锭锯将锭切成晶片。 切片步骤包括在切片期间沿着正向和反向的方向移动导线，除了当在每个晶片的识别区域中切片时，在每个晶片的识别区域中切片并且仅在每个晶片的识别区域中切片时在正向移动线。 在将晶片切成晶片时，在识别区域中减小了相对于识别标记尺寸的厚度变化。
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公开(公告)号：US08859393B2
公开(公告)日：2014-10-14
申请号：US13162122
申请日：2011-06-16
IPC分类号： H01L21/30 , H01L21/46 , H01L21/762
CPC分类号： H01L21/76254
摘要： Methods and systems are disclosed for performing a passivation process on a silicon-on-insulator wafer in a chamber in which the wafer is cleaved. A bonded wafer pair is cleaved within the chamber to form the silicon-on-insulator (SOI) wafer. A cleaved surface of the SOI wafer is then passivated in-situ by exposing the cleaved surface to a passivating substance. This exposure to a passivating substance results in the formation of a thin layer of oxide on the cleaved surface. The silicon-on-insulator wafer is then removed from the chamber. In other embodiments, the silicon-on-insulator wafer is first transferred to an adjoining chamber where the wafer is then passivated. The wafer is transferred to the adjoining chamber without exposing the wafer to the atmosphere outside the chambers.
摘要翻译： 公开了用于在其中晶片被切割的腔室中的绝缘体上硅晶片上进行钝化处理的方法和系统。 键合晶片对在腔室内切割以形成绝缘体上硅（SOI）晶片。 然后通过将切割的表面暴露于钝化物质来原位钝化SOI晶片的切割表面。 这种暴露于钝化物质导致在切割表面上形成薄层的氧化物。 然后将绝缘体硅晶片从腔室中取出。 在其他实施例中，绝缘体上硅晶片首先被转移到相邻的腔室，然后晶片被钝化。 将晶片转移到相邻的室，而不将晶片暴露于室外的大气。
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公开(公告)号：US20140137395A1
公开(公告)日：2014-05-22
申请号：US13680873
申请日：2012-11-19
IPC分类号： B23D1/00
CPC分类号： B23D1/00 , B28D5/04 , C30B11/14 , C30B29/06 , C30B33/06 , C30B35/00 , Y10T29/49995 , Y10T29/52 , Y10T117/1016
摘要： A method of producing rectangular seed bricks for use in semiconductor or solar manufacturing is disclosed. The method includes connecting an alignment layer to a top surface of a template, drawing alignment lines on the alignment layer to demarcate a plurality of nodes, connecting cylindrical rods to the alignment layer such that a center of each rod is aligned with a corresponding node, and slicing through the rods and the alignment layer with a wire web to produce rectangular seed bricks.
摘要翻译： 公开了一种制造用于半导体或太阳能制造的矩形种子砖的方法。 该方法包括将对准层连接到模板的顶表面，在对准层上绘制对准线以划定多个节点，将圆柱形杆连接到对准层，使得每个杆的中心与相应的节点对齐， 并通过杆和对准层用线网切片以产生矩形种子砖。
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公开(公告)号：US20130062020A1
公开(公告)日：2013-03-14
申请号：US13417934
申请日：2012-03-12
IPC分类号： B32B38/10
CPC分类号： H01L21/76254 , B23B49/006 , B32B43/006 , C09J2205/302 , H01L21/67092 , Y10S156/93 , Y10S156/941 , Y10T156/1168 , Y10T156/1174 , Y10T156/1184 , Y10T156/19 , Y10T156/195 , Y10T156/1956 , Y10T156/1978
摘要： Systems and methods are provided for mechanically cleaving a bonded wafer pair by controlling the rate of cleaving. This controlled rate of cleaving results in a reduction or elimination of non-uniform thickness variations in the cleaved surface of the resulting SOI wafer. One embodiment uses flexible chucks attached to the faces of the wafers and actuators attached to the flexible chucks to cleave the bonded wafer pair. Other embodiments also use rollers in contact with the surfaces to control the rate of cleaving.
摘要翻译： 提供了通过控制切割速度来机械地切割接合的晶片对的系统和方法。 这种受控的切割速率导致所得SOI晶片的切割表面的不均匀厚度变化的减小或消除。 一个实施例使用附接到晶片的表面的柔性卡盘和附接到柔性卡盘的致动器来切割结合的晶片对。 其他实施例还使用与表面接触的辊来控制裂开速率。
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公开(公告)号：US20120003814A1
公开(公告)日：2012-01-05
申请号：US13162122
申请日：2011-06-16
IPC分类号： H01L21/301 , H01L21/31
CPC分类号： H01L21/76254
摘要： Methods and systems are disclosed for performing a passivation process on a silicon-on-insulator wafer in a chamber in which the wafer is cleaved. A bonded wafer pair is cleaved within the chamber to form the silicon-on-insulator (SOI) wafer. A cleaved surface of the SOI wafer is then passivated in-situ by exposing the cleaved surface to a passivating substance. This exposure to a passivating substance results in the formation of a thin layer of oxide on the cleaved surface. The silicon-on-insulator wafer is then removed from the chamber. In other embodiments, the silicon-on-insulator wafer is first transferred to an adjoining chamber where the wafer is then passivated. The wafer is transferred to the adjoining chamber without exposing the wafer to the atmosphere outside the chambers.
摘要翻译： 公开了用于在其中晶片被切割的腔室中的绝缘体上硅晶片上进行钝化处理的方法和系统。 键合晶片对在腔室内切割以形成绝缘体上硅（SOI）晶片。 然后通过将切割的表面暴露于钝化物质来原位钝化SOI晶片的切割表面。 这种暴露于钝化物质导致在切割表面上形成薄层的氧化物。 然后将绝缘体硅晶片从腔室中取出。 在其他实施例中，绝缘体上硅晶片首先被转移到相邻的腔室，然后晶片被钝化。 将晶片转移到相邻的室，而不将晶片暴露于室外的大气。
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公开(公告)号：US08367519B2
公开(公告)日：2013-02-05
申请号：US12974772
申请日：2010-12-21
申请人： Dale A. Witte , Jeffrey L. Libbert
发明人： Dale A. Witte , Jeffrey L. Libbert
IPC分类号： H01L21/18 , H01L21/762
CPC分类号： H01L21/78 , H01L21/76254 , Y10T428/24174
摘要： This invention generally relates to a process for making a multi-layered crystalline structure. The process includes implanting ions into a donor structure, bonding the implanted donor structure to a second structure to form a bonded structure, cleaving the bonded structure, and removing any residual portion of the donor structure from the finished multi-layered crystalline structure.
摘要翻译： 本发明一般涉及制造多层晶体结构的方法。 该方法包括将离子注入供体结构中，将注入的供体结构键合到第二结构以形成结合结构，切割结合的结构，以及从最终的多层晶体结构去除供体结构的任何残留部分。
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