发明授权
- 专利标题： Method for the preparation of a multi-layered crystalline structure
- 专利标题（中）： 制备多层晶体结构的方法
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申请号： US12974772申请日： 2010-12-21
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公开(公告)号： US08367519B2公开(公告)日： 2013-02-05
- 发明人: Dale A. Witte , Jeffrey L. Libbert
- 申请人： Dale A. Witte , Jeffrey L. Libbert
- 申请人地址： US MO St. Peters
- 专利权人： MEMC Electronic Materials, Inc.
- 当前专利权人： MEMC Electronic Materials, Inc.
- 当前专利权人地址： US MO St. Peters
- 代理机构： Armstrong Teasdale LLP
- 主分类号： H01L21/18
- IPC分类号： H01L21/18 ; H01L21/762
摘要：
This invention generally relates to a process for making a multi-layered crystalline structure. The process includes implanting ions into a donor structure, bonding the implanted donor structure to a second structure to form a bonded structure, cleaving the bonded structure, and removing any residual portion of the donor structure from the finished multi-layered crystalline structure.
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