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公开(公告)号：US20220328720A1
公开(公告)日：2022-10-13
申请号：US17848079
申请日：2022-06-23
申请人： EPISTAR CORPORATION
发明人： Peng Ren CHEN , Yu-Shan CHIU , Wen-Hsiang LIN , Shih-Wei WANG , Chen OU
摘要： A method of manufacturing a light-emitting device, including: providing a substrate structure including a base portion and wherein the base portion includes a surface; performing a patterning step to form a plurality of protrusions, wherein the plurality of protrusions are arranged on the surface of the base portion; forming a buffer layer on the surface of the base portion by physical vapor deposition, wherein the buffer layer covers the protrusions; and forming III-V compound semiconductor layers on the buffer layer; wherein one of the plurality of protrusions has a height not greater than 1.5 μm; and wherein the light-emitting device has a full width at half maximum (FWHM) of smaller than 250 arcsec in accordance with a (102) XRD rocking curve.
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公开(公告)号：US20190334059A1
公开(公告)日：2019-10-31
申请号：US16397775
申请日：2019-04-29
申请人： EPISTAR CORPORATION
发明人： Peng Ren CHEN , Yu-Shan CHIU , Wen-Hsiang LIN , Shih-Wei WANG , Chen OU
摘要： A light-emitting device, includes a substrate structure, including a base portion having a surface and a plurality of protrusions formed on the base portion; a buffer layer covering the plurality of protrusions and the surface; and III-V compound semiconductor layers formed on the buffer layer; wherein one of the plurality of protrusions has a height not greater than 1.5 μm; wherein the light-emitting device has a full width at half maximum (FWHM) of smaller than 250 arcsec in accordance with a (102) XRD rocking curve.
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公开(公告)号：US20180212123A1
公开(公告)日：2018-07-26
申请号：US15874501
申请日：2018-01-18
申请人： EPISTAR CORPORATION
发明人： Li-Ming CHANG , Tzung-Shiun YEH , Chien-Fu SHEN , Yu-Rui LIN , Chen OU , Hsin-Ying WANG , Hui-Chun YEH
IPC分类号： H01L33/62
CPC分类号： H01L33/62 , F21K9/232 , F21Y2115/10 , H01L23/60 , H01L33/0016 , H01L33/06 , H01L33/14 , H01L33/20 , H01L33/22 , H01L33/30 , H01L33/32 , H01L33/38
摘要： A light-emitting element, includes a first edge, a second edge, a third edge and a fourth edge; a substrate; a semiconductor stack formed on the substrate, including a first semiconductor layer, a second semiconductor layer and an active layer formed therebetween; a transparent conductive layer, formed on the second semiconductor layer; a first electrode formed on the first semiconductor layer, including a first pad electrode and a first finger electrode extending from the first pad electrode; and a second electrode formed on the first second semiconductor layer, including a second pad electrode and a second finger electrode extending from the second pad electrode; wherein the first finger electrode is disposed at and along the first edge; and wherein in top view, an overlapping portions of the first finger electrode and the second finger electrode are non-parallel.
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公开(公告)号：US20160372635A1
公开(公告)日：2016-12-22
申请号：US15256263
申请日：2016-09-02
申请人： EPISTAR CORPORATION
发明人： Tsun-Kai KO , Schang-Jing HON , Chien-Kai CHUNG , Hui-Chun YEH , An-Ju LIN , Chien-Fu SHEN , Chen OU
CPC分类号： H01L33/387 , H01L33/06 , H01L33/14 , H01L33/22 , H01L33/382 , H01L33/42 , H01L33/44 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor device comprises a substrate; a semiconductor system including a first conductivity layer, a second conductivity layer, and a conversion unit between the first conductivity layer and the second conductivity layer, wherein the first conductivity layer is closer to the substrate than the second conductivity layer is to the substrate, and the second conductivity layer comprises a top surface perpendicular to a thickness direction of the semiconductor system, and in a top view of the semiconductor system, an outline of the first conductivity layer surrounds an outline of the second conductivity layer; a first electrical connector on the first conductivity layer of the semiconductor system; a second electrical connector comprising a shape formed on the second conductivity layer of the semiconductor system; and a contact layer formed on the top surface of the second conductivity layer and having an outer perimeter at an inner side of the outline of the second conductivity layer in the top view of the semiconductor system, wherein the contact layer comprises a discontinuous region exposing the top surface of the second conductivity layer, the discontinuous region is formed along the shape of the second electrical connector.
摘要翻译： 光电子半导体器件包括衬底; 包括第一导电层，第二导电层和第一导电层与第二导电层之间的转换单元的半导体系统，其中第一导电层比第二导电层更靠近基板，并且 所述第二导电层包括垂直于所述半导体系统的厚度方向的顶表面，并且在所述半导体系统的俯视图中，所述第一导电层的轮廓围绕所述第二导电层的轮廓; 在半导体系统的第一导电层上的第一电连接器; 第二电连接器，包括形成在半导体系统的第二导电层上的形状; 以及形成在所述第二导电层的顶表面上并且在所述半导体系统的顶视图中在所述第二导电层的轮廓的内侧具有外周的接触层，其中所述接触层包括暴露所述第二导电层的不连续区域 第二导电层的顶表面沿着第二电连接器的形状形成不连续区域。
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公开(公告)号：US20130302927A1
公开(公告)日：2013-11-14
申请号：US13945730
申请日：2013-07-18
申请人： EPISTAR CORPORATION
发明人： Chen Ke HSU , Win Jim SU , Chia-Ming CHUANG , Chen OU
IPC分类号： H01L33/22
CPC分类号： H01L33/22 , H01L33/0095 , H01L33/20
摘要： A light emitting device and a method of fabricating thereof are provided. The method of fabricating the light emitting device comprises: providing a substrate having a first major surface and a second major surface; forming a plurality of light-emitting stacks on the first major surface; forming an etching protection layer on each of the light emitting stacks; forming a plurality of holes by a discontinuous laser beam on the substrate; etching the plurality of holes; and slicing off the substrate along the plurality of holes to form a light emitting device. The light emitting device has a substrate wherein the sidewall of the substrate comprising a first area with a substantially flat surface and a second area with substantially textured surface.
摘要翻译： 提供一种发光器件及其制造方法。 制造发光器件的方法包括：提供具有第一主表面和第二主表面的衬底; 在所述第一主表面上形成多个发光堆叠; 在每个发光堆上形成蚀刻保护层; 通过基板上的不连续激光束形成多个孔; 蚀刻多个孔; 并且沿着所述多个孔切割所述基板以形成发光器件。 发光器件具有衬底，其中衬底的侧壁包括具有基本平坦表面的第一区域和具有基本纹理表面的第二区域。
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公开(公告)号：US20210305456A1
公开(公告)日：2021-09-30
申请号：US17211331
申请日：2021-03-24
申请人： EPISTAR CORPORATION
发明人： Jian-Zhi CHEN , Yen-Chun TSENG , Hui-Fang KAO , Yao-Ning CHAN , Yi-Tang LAI , Yun-Chung CHOU , Shih-Chang LEE , Chen OU
IPC分类号： H01L33/36 , H01L33/20 , H01L33/38 , H01L25/075
摘要： The present disclosure provides a semiconductor light-emitting device and a semiconductor light-emitting component. The semiconductor light-emitting device includes a substrate, a first semiconductor contact layer, a semiconductor light-emitting stack including an active layer, a first-conductivity-type contact structure, a second semiconductor contact layer, a second-conductivity-type contact structure and a first electrode pad. The first-conductivity-type contact structure is electrically connected to the first semiconductor contact layer. The second-conductivity-type contact structure is electrically connected to the second semiconductor contact layer. The first-conductivity-type contact structure has a first bottom surface and a first top surface, and the active layer has a second bottom surface and a second top surface. The first bottom surface is lower than the second bottom surface, and the first top surface is higher than the second top surface in a cross-sectional view of the semiconductor light-emitting device.
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公开(公告)号：US20210296536A1
公开(公告)日：2021-09-23
申请号：US17202001
申请日：2021-03-15
申请人： EPISTAR CORPORATION
发明人： Hsin-Ying WANG , Chao-Hsing CHEN , Chi-Ling LEE , Chen OU , Min-Hsun HSIEH
摘要： A semiconductor light-emitting device includes: a substrate; a semiconductor stack on the substrate including a first semiconductor contact layer including an upper surface; a light-emitting stack including an active layer on the upper surface; a second semiconductor contact layer on the light-emitting stack; and a recessed region including part of the upper surface; a transparent electrode on the second semiconductor contact layer; a protective layer on the substrate and the light-emitting stack; and a first and a second electrode pad on the substrate and electrically connected to the first semiconductor contact layer and the transparent electrode via first and second openings of the protective layer. A ratio of an area of the substrate to an area of the transparent electrode ranges from 2 to 100. A ratio of an operating current of the semiconductor light-emitting device to the area of the transparent electrode ranges from 10 mA/mm2 to 1000 mA/mm2.
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公开(公告)号：US20190252459A1
公开(公告)日：2019-08-15
申请号：US16390899
申请日：2019-04-22
申请人： Epistar Corporation
发明人： Chen OU , Chun-Wei CHANG , Chih-Wei WU , Sheng-Chih WANG , Hsin-Mei TSAI , Chia-Chen TSAI , Chuan-Cheng CHANG
IPC分类号： H01L27/15
摘要： A light-emitting device includes a first semiconductor layer having an uppermost surface and a bottommost surface; a first light-emitting structure and a second light-emitting structure formed on the same first semiconductor layer, wherein the first semiconductor layer is continuous; a first trench formed between the first and the second light-emitting structures; and a second electrode formed on the second semiconductor layer and including a second pad and a plurality of second extending parts extending from the second pad; wherein the second pad is between the first and the second light-emitting structures, and the plurality of second extending parts extends to the first and the second light-emitting structures, respectively; wherein the first trench passes through the uppermost surface but does not extend to the bottommost surface; wherein the first trench includes an equal width in a top view.
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公开(公告)号：US20170365637A1
公开(公告)日：2017-12-21
申请号：US15675351
申请日：2017-08-11
申请人： Epistar Corporation
发明人： Chen OU , Chun-Wei CHANG , Chih-Wei WU , Sheng-Chih WANG , Hsin-Mei TSAI , Chia-Chen TSAI , Chuan-Cheng CHANG
摘要： A light-emitting device includes a first semiconductor layer; a first, a second and a third light-emitting structures formed on the same first semiconductor layer; a first trench between the first and the second light-emitting structures; a second trench between the second and the third light-emitting structures, wherein the first and the second trenches include bottom portions exposing a surface of the first semiconductor layer; a third trench in one of the light-emitting structures, exposing the first semiconductor layer and extending along a direction parallel with the first semiconductor layer; an insulating bridge part in the first and the second trenches, connecting the light-emitting structures; a first electrode in the third trench, electrically connecting to the first semiconductor layer; and a second electrode, including a pad on one of the light-emitting structures and an extending part; wherein the extending part is formed on the insulating bridge part and extends to the light-emitting structures.
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公开(公告)号：US20170155015A1
公开(公告)日：2017-06-01
申请号：US15428395
申请日：2017-02-09
申请人： EPISTAR CORPORATION
发明人： Chen OU , Chiu-Lin YAO
摘要： A light-emitting device comprises a substrate having a top surface and a plurality of patterned units protruding from the top surface; and a light-emitting stack formed on the substrate and having an active layer with a first surface substantially parallel to the top surface, wherein one of the plurality of patterned units comprises a plurality of connecting sides constituting a polygon shape in a top view of the light-emitting device, the one of the plurality of patterned units comprises a vertex and a plurality of inclined surfaces respectively extending from the plurality of connecting sides, the plurality of inclined surfaces commonly join at the vertex in a cross-sectional view of the light-emitting device, the vertex being between the top surface of the substrate and the first surface of the active layer, and six of the plurality of patterned units forms a hexagon in the top view of the light-emitting device.
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