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公开(公告)号：US20150076536A1
公开(公告)日：2015-03-19
申请号：US14470396
申请日：2014-08-27
申请人： Epistar Corporation
发明人： Chen OU , Chun-Wei CHANG , Chih-Wei WU , Sheng-Chih WANG , Hsin-Mei TSAI , Chia-Chen TSAI , Chuan-Cheng CHANG
摘要： A light-emitting element comprises a first semiconductor layer, a first light-emitting structure and a second light-emitting structure on the first semiconductor layer, a first electrode on the first semiconductor layer, a second electrode on the first light-emitting structure, and a first trench between the first light-emitting structure and the second light-emitting structure, exposing the first semiconductor layer, wherein the first trench is devoid of the first electrode and the second electrode formed therein.
摘要翻译： 发光元件包括在第一半导体层上的第一半导体层，第一发光结构和第二发光结构，第一半导体层上的第一电极，第一发光结构上的第二电极， 以及在所述第一发光结构和所述第二发光结构之间的第一沟槽，暴露所述第一半导体层，其中所述第一沟槽没有形成在所述第一电极和所述第二电极中。
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公开(公告)号：US20190252459A1
公开(公告)日：2019-08-15
申请号：US16390899
申请日：2019-04-22
申请人： Epistar Corporation
发明人： Chen OU , Chun-Wei CHANG , Chih-Wei WU , Sheng-Chih WANG , Hsin-Mei TSAI , Chia-Chen TSAI , Chuan-Cheng CHANG
IPC分类号： H01L27/15
摘要： A light-emitting device includes a first semiconductor layer having an uppermost surface and a bottommost surface; a first light-emitting structure and a second light-emitting structure formed on the same first semiconductor layer, wherein the first semiconductor layer is continuous; a first trench formed between the first and the second light-emitting structures; and a second electrode formed on the second semiconductor layer and including a second pad and a plurality of second extending parts extending from the second pad; wherein the second pad is between the first and the second light-emitting structures, and the plurality of second extending parts extends to the first and the second light-emitting structures, respectively; wherein the first trench passes through the uppermost surface but does not extend to the bottommost surface; wherein the first trench includes an equal width in a top view.
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公开(公告)号：US20170365637A1
公开(公告)日：2017-12-21
申请号：US15675351
申请日：2017-08-11
申请人： Epistar Corporation
发明人： Chen OU , Chun-Wei CHANG , Chih-Wei WU , Sheng-Chih WANG , Hsin-Mei TSAI , Chia-Chen TSAI , Chuan-Cheng CHANG
摘要： A light-emitting device includes a first semiconductor layer; a first, a second and a third light-emitting structures formed on the same first semiconductor layer; a first trench between the first and the second light-emitting structures; a second trench between the second and the third light-emitting structures, wherein the first and the second trenches include bottom portions exposing a surface of the first semiconductor layer; a third trench in one of the light-emitting structures, exposing the first semiconductor layer and extending along a direction parallel with the first semiconductor layer; an insulating bridge part in the first and the second trenches, connecting the light-emitting structures; a first electrode in the third trench, electrically connecting to the first semiconductor layer; and a second electrode, including a pad on one of the light-emitting structures and an extending part; wherein the extending part is formed on the insulating bridge part and extends to the light-emitting structures.
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