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170 条记录 (耗时 0.018 秒)

    Dual mode tilted-charge devices and methods
    8.
    发明授权
    Dual mode tilted-charge devices and methods 有权
    双模式倾斜充电装置和方法

    公开(公告)号：US09431572B2

    公开(公告)日：2016-08-30

    申请号：US13957386

    申请日：2013-08-01

    申请人： Quantum Electro Opto Systems Sdn. Bhd.

    发明人： Gabriel Walter

    IPC分类号： H01L29/06 ,  H01L33/06 ,  H01L29/737 ,  H01L33/00 ,  H01L29/10 ,  H01L29/12 ,  B82Y10/00 ,  H01L33/04 ,  H01L29/08 ,  H01L29/205

    CPC分类号： H01L33/002 ,  B82Y10/00 ,  H01L29/0817 ,  H01L29/1004 ,  H01L29/122 ,  H01L29/205 ,  H01L29/7371 ,  H01L33/0016 ,  H01L33/04 ,  H01L33/06

    摘要： A method for providing and operating a device in a first mode as a light-emitting transistor and in a second mode as a high speed electrical transistor, including the following steps: providing a semiconductor base region of a first conductivity type between semiconductor emitter and collector regions of a second semiconductor type; providing, in the base region, a quantum size region; providing, in the base region between the quantum size region and the collector region, a carrier transition region; applying a controllable bias voltage with respect to the base and collector regions to control depletion of carriers in at least the carrier transition region; and applying signals with respect to the emitter, base, and collector regions to operate the device as either a light-emitting transistor or a high speed electrical transistor, depending on the controlled bias signal.

    摘要翻译： 一种用于以第一模式提供和操作作为发光晶体管的器件和在第二模式中作为高速电晶体管的方法，包括以下步骤：在半导体发射极和集电极之间提供第一导电类型的半导体基极区域 第二半导体类型的区域; 在碱性区域中提供量子尺寸区域; 在量子尺寸区域和集电极区域之间的基极区域中提供载流子过渡区域; 对所述基极集电极区域和所述集电极区域施加可控偏置电压以控制至少所述载流子过渡区域中载流子的耗尽; 并且相对于发射极，基极和集电极区域施加信号，以根据受控的偏置信号将器件操作为发光晶体管或高速电晶体管。

    Semiconductor device with efficient carrier recombination
    9.
    发明授权
    Semiconductor device with efficient carrier recombination 有权
    具有高效载流子复合的半导体器件

    公开(公告)号：US08916885B2

    公开(公告)日：2014-12-23

    申请号：US13197671

    申请日：2011-08-03

    申请人： Alexei Koudymov ,  Christian Martin Wetzel

    发明人： Alexei Koudymov ,  Christian Martin Wetzel

    IPC分类号： H01L33/00 ,  H01L33/38 ,  H01L27/15 ,  H01L33/08 ,  H01L33/20

    CPC分类号： H01L33/38 ,  H01L33/0016 ,  H01L33/08 ,  H01L33/20

    摘要： The present invention introduces the novel, improved design approach of the semiconductor devices that utilize the effect of carrier recombination, for example, to produce the electromagnetic radiation. The approach is based on the separate control over the injection of the electrons and holes into the active region of the device. As a result, better recombination efficiencies can be achieved, and the effect of the wavelength shift of the produced radiation can be eliminated. The devices according to the present invention outperform existing solid state light and electromagnetic radiation sources and can be used in any applications where solid state light sources are currently involved, as well as any applications future discovered.

    摘要翻译： 本发明介绍了利用载波复合效应的半导体器件的新型改进的设计方法，例如产生电磁辐射。 该方法基于对电子和空穴注入器件的有源区域的单独控制。 因此，可以实现更好的复合效率，并且可以消除所产生的辐射的波长偏移的影响。 根据本发明的装置优于现有的固态光和电磁辐射源，并且可以用于当前涉及固态光源的任何应用以及将来发现的任何应用。

    Drive device, print head and image forming apparatus
    10.
    发明授权
    Drive device, print head and image forming apparatus 有权
    驱动装置，打印头和成像装置

    公开(公告)号：US08836743B2

    公开(公告)日：2014-09-16

    申请号：US13070006

    申请日：2011-03-23

    申请人： Akira Nagumo

    发明人： Akira Nagumo

    IPC分类号： B41J2/385 ,  B41J2/39 ,  B41J2/47 ,  B41J2/45 ,  B41J2/435 ,  H01L25/075 ,  G06K15/12 ,  H01L33/00

    CPC分类号： B41J2/435 ,  G06K15/1238 ,  H01L25/0753 ,  H01L33/0016 ,  H01L2224/48091 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/13091 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00

    摘要： A drive device to drive a plurality of three-terminal light emitting elements includes a drive circuit. The drive circuit includes a first and second conductive type MOS transistor complementarily connected to each other and configured to drive three-terminal light emitting elements that are in conduction state based on a received drive signal. The first conductive type MOS transistor is formed in a substrate region and includes a channel formation region, which is a region wherein a channel is to be formed. An impurity with the same polarity as that of the substrate region is injected in the channel formation region.

    摘要翻译： 驱动多个三端子发光元件的驱动装置包括驱动电路。 驱动电路包括彼此互补连接的第一和第二导电型MOS晶体管，并且被配置为基于接收的驱动信号来驱动处于导通状态的三端子发光元件。 第一导电型MOS晶体管形成在衬底区域中，并且包括作为要形成沟道的区域的沟道形成区域。 在沟道形成区域中注入与衬底区域具有相同极性的杂质。