摘要:
A light-emitting component includes an insulating substrate, plural light-emitting elements, and plural thyristors. The plural light-emitting elements are disposed on the substrate and constituted by a first stacked semiconductor layer, the first stacked semiconductor layer being obtained by stacking plural semiconductor layers. The plural thyristors are constituted by a second stacked semiconductor layer disposed on the substrate such that the light-emitting elements and the thyristors are arranged side by side, connected to the plural light-emitting elements, respectively, and turn on to drive the light-emitting elements to emit light or to increase an emitted light amount, the second stacked semiconductor layer being obtained by stacking plural semiconductor layers that are different from the semiconductor layers of the first stacked semiconductor layer.
摘要:
A light-emitting component includes a substrate, a light-emitting element, a thyristor, and a light-transmission reduction layer. The light-emitting element is disposed on the substrate. The thyristor causes the light-emitting element to emit light or causes an amount of light emitted by the light-emitting element to increase, upon entering an on-state. The light-transmission reduction layer is disposed between the light-emitting element and the thyristor such that the light-emitting element and the thyristor are stacked, and suppresses light emitted by the thyristor from passing therethrough.
摘要:
A light-emitting component includes a light-emitting element, a driving thyristor, and a light-absorbing layer. The light-emitting element emits light of a predetermined wavelength. The driving thyristor causes the light-emitting element to emit light or causes an amount of light emitted by the light-emitting element to increase, upon entering an on-state. The light-absorbing layer is disposed between the light-emitting element and the driving thyristor such that the light-emitting element and the driving thyristor are stacked, and absorbs light emitted by the driving thyristor.
摘要:
A light-emitting component includes a light-emitting element, a thyristor, and a light-absorbing layer. The thyristor includes a semiconductor layer having a bandgap energy smaller than or equal to a bandgap energy equivalent to a wavelength of light emitted by the light-emitting element. The thyristor causes the light-emitting element to emit light or causes an amount of light emitted by the light-emitting element to increase, upon entering an on-state. The light-absorbing layer is disposed between the light-emitting element and the thyristor such that the light-emitting element and the thyristor are stacked. The light-absorbing layer absorbs the light emitted by the light-emitting element.
摘要:
A light emitting apparatus includes: a semiconductor layer including a light emitting region that generates modulation light modulated with a first signal, and a feedback region that is configured so that a feedback mode to feed back a part of light generated in the light emitting region to the light emitting region and a monitor mode to monitor a light amount of the light generated in the light emitting region are switchable; and a controller, wherein when the modulation light is generated in the light emitting region, the controller sets the feedback region to the feedback mode, and the controller switches the feedback region to the monitor mode during at least a part of a period in which there is no first signal.
摘要:
A light emitting element includes:a light emitting part that is formed on a front surface side of a semi-insulating substrate; anda light receiving part that is formed on the front surface side, that shares a semiconductor layer with the light emitting part, and that receives light propagating in a lateral direction through the semiconductor layer from the light emitting part, whereinanode electrodes and cathode electrodes of the light emitting part and the light receiving part are formed on the front surface side in a state in which the anode electrodes are separated from each other and the cathode electrodes are separated from each other.
摘要:
A surface-emitting semiconductor laser includes a substrate; a first semiconductor multilayer film reflector stacked on the substrate; an active region stacked on or above the first semiconductor multilayer film reflector; a second semiconductor multilayer film reflector stacked on or above the active layer; a cavity extension region interposed between the first semiconductor multilayer film reflector and the active region or between the second semiconductor multilayer film reflector and the active region; and a carrier block layer interposed between the cavity extension region and the active region. The carrier block layer includes a first carrier block layer and a second carrier block layer. The first and second carrier block layers have a larger band gap than the active region and the cavity extension region. The first carrier block layer has a larger band gap than the second carrier block layer.
摘要:
Provided is an image processing apparatus including a print image generation section that generates print image data to be supplied to a printing device by executing a rasterizing process and an additional process for printing on print data, and an image density calculation section that executes the rasterizing process on the print data without the additional process and calculates image density information used in control of an image forming process in the printing device from raster image data generated through the rasterizing process to process the print data at a speed higher than a speed in print image generation section, wherein a difference in a processing speed between the print image generation section and the image density calculation section causes image density information of a page prior to a page of the print image data printed by the printing device to be supplied to the printing device.
摘要:
A laser includes: a substrate; a first reflector including pairs of high and low refractive index layers; an active region forming a resonator; a second reflector including an emission surface and pairs of high and low refractive index layers; an extending region thicker than oscillation wavelength, extending the length of the resonator, and including a conductive semiconductor material; a confining layer including a high refractive index region and a surrounding low refractive index region; and an additional film allowing the oscillation wavelength to transmit therethrough. The first and second reflectors, the extending region, and the active region determine a reflection band including resonance wavelengths, in one of which oscillation occurs. The additional film includes central and outer circumferential portions having different thicknesses to suppress resonance in the high refractive index region and the extending region. The central and outer circumferential portions overlap the high and low refractive index regions, respectively.
摘要:
A light emitting element includes a semiconductor substrate, and an island structure formed on the semiconductor substrate. The island structure includes a light-emitting-unit thyristor and a current confinement structure. The light-emitting-unit thyristor includes stacked semiconductor layers having a pnpn structure. The current confinement structure includes a high-resistance region and a conductive region, and confines carriers in the conductive region.