公开(公告)号：US20240162295A1

公开(公告)日：2024-05-16

申请号：US18280049

申请日：2022-01-31

申请人： Hitachi Energy Ltd

发明人： Umamaheswara VEMULAPATI ,  Neophytos LOPHITIS ,  Jan VOBECKY ,  Florin UDREA ,  Thomas STIASNY ,  Chiara CORVASCE ,  Marina ANTONIOU

IPC分类号： H01L29/10 ,  H01L29/74 ,  H01L29/745 ,  H01L29/747

CPC分类号： H01L29/102 ,  H01L29/7416 ,  H01L29/7432 ,  H01L29/745 ,  H01L29/747

摘要： A power semiconductor device (1) comprises a gate-commutated thyristor cell (20) including a cathode electrode (2), a cathode region (9) of a first conductivity type, a base layer (8) of a second conductivity type, a drift layer (7) of the first conductivity type, an anode layer (5) of the second conductivity type, an anode electrode (3) and a gate electrode (4). The base layer (8) comprises a cathode base region (81) located between the cathode region (9) and the drift layer (7) and having a first depth (D1), a gate base region (82) located between the gate electrode (4) and the drift layer (7) and having a second depth (D2), and an intermediate base region (83) located between the cathode base region (81) and the gate base region (82) and having two different values of a third depth (D3) being between the first depth (D1) and the second depth (D2).

公开(公告)号：US11978787B2

公开(公告)日：2024-05-07

申请号：US17674973

申请日：2022-02-18

申请人： Littelfuse, Inc.

发明人： Koichiro Yoshimoto

IPC分类号： H01L29/74 ,  H01L23/367 ,  H01L23/495 ,  H01L29/66 ,  H01L29/745 ,  H01L29/747 ,  H03K17/60

CPC分类号： H01L29/745 ,  H01L23/3675 ,  H01L23/49562 ,  H01L23/49575 ,  H01L29/66386 ,  H01L29/74 ,  H01L29/747 ,  H03K17/60

摘要： A power control switch assembly. The assembly may include a thyristor device, where the thyristor device includes a first device terminal, a second device terminal, and a gate terminal> The assembly may include a negative temperature coefficient (NTC) device, electrically coupled to the gate terminal of the thyristor device on a first end, and electrically coupled to the first device terminal of the thyristor device on a second end, wherein the NTC device is thermally coupled to the thyristor device.

公开(公告)号：US11916138B2

公开(公告)日：2024-02-27

申请号：US17725326

申请日：2022-04-20

申请人： Pakal Technologies, Inc.

发明人： Paul M Moore ,  Vladimir Rodov ,  Richard A Blanchard

IPC分类号： H01L29/745 ,  H01L29/66 ,  H01L29/74

CPC分类号： H01L29/7455 ,  H01L29/66363 ,  H01L29/7424

摘要： A sacrificial substrate wafer is provided. A low resistivity etch stop layer is formed on or in the top surface of the wafer. The etch stop layer may be a highly doped, p+ type epitaxially grown layer, or an implanted p+ type boron layer, or an epitaxially grown p+ type SiGe layer. Various epitaxial layers, such as an n− type drift layer, and doped regions are then formed over the etch stop layer to form a vertical power device. The starting wafer is then removed by a combination of mechanical grinding/polishing to leave a thinner layer of the starting wafer. A chemical or plasma etch is then used to remove the remainder of the starting wafer, using the etch stop layer to automatically stop the etching. A bottom metal electrode is then formed on the etch stop layer. The etch stop layer injects hole carriers into the drift layer.

公开(公告)号：US11705510B2

公开(公告)日：2023-07-18

申请号：US17259197

申请日：2019-07-02

申请人： HANGZHOU UG MIN SEMICONDUCTOR TECHNOLOGY CO. LTD

发明人： Simin Li

IPC分类号： H01L29/745 ,  H01L21/225 ,  H01L21/265 ,  H01L21/285 ,  H01L29/66

CPC分类号： H01L29/745 ,  H01L21/2253 ,  H01L21/26513 ,  H01L21/2855 ,  H01L29/66363

摘要： A gate-turn-off thyristor is provided. The gate-turn-off thyristor includes a plurality of strips formed by repeatedly arranging a plurality of N-type emitter regions with high doping concentration of an upper transistor on an upper surface of an N-type silicon substrate with high resistivity, wherein a periphery of each strip of the plurality of strips is surrounded with a P-type dense base region bus bar of the upper transistor, a cathode metal layer is disposed on an N-type emitter region of the plurality of N-type emitter regions of the upper transistor, and a P-type base region of the upper transistor is disposed below the N-type emitter region of the upper transistor; a side of the P-type base region of the upper transistor is connected to a P-type dense base region of the upper transistor or a P-type dense base region bus bar of the upper transistor.

公开(公告)号：US20230154986A1

公开(公告)日：2023-05-18

申请号：US18097586

申请日：2023-01-17

申请人： FUJI ELECTRIC CO., LTD.

发明人： Keiji OKUMURA

IPC分类号： H01L29/10 ,  H01L29/739 ,  H01L29/78 ,  H01L29/08 ,  H01L29/423 ,  H01L29/417 ,  H01L29/66 ,  H01L29/16 ,  H01L29/745

CPC分类号： H01L29/1095 ,  H01L29/7397 ,  H01L29/7813 ,  H01L29/7806 ,  H01L29/0865 ,  H01L29/7811 ,  H01L29/4236 ,  H01L29/417 ,  H01L29/66068 ,  H01L29/1608 ,  H01L29/745 ,  H01L29/083 ,  H01L29/66348 ,  H01L21/049

摘要： An insulated-gate semiconductor device, which has trenches arranged in a chip structure, the trenches defining both sidewalls in a first and second sidewall surface facing each other, includes: a first unit cell including a main-electrode region in contact with a first sidewall surface of a first trench, a base region in contact with a bottom surface of the main-electrode region and the first sidewall surface, a drift layer in contact with a bottom surface of the base region and the first sidewall surface, and a gate protection-region in contact with the second sidewall surface and a bottom surface of the first trench; and a second unit cell including an operation suppression region in contact with a first sidewall surface and a second sidewall surface of a second trench, wherein the second unit cell includes the second trench located at one end of an array of the trenches.

公开(公告)号：US20220344493A1

公开(公告)日：2022-10-27

申请号：US17725037

申请日：2022-04-20

申请人： Pakal Technologies, Inc.

发明人： Paul M. Moore ,  Vladimir Rodov ,  Richard A Blanchard

IPC分类号： H01L29/66 ,  H01L21/265 ,  H01L29/745

摘要： After the various regions of a vertical power device are formed in or on the top surface of an n-type wafer, the wafer is thinned, such as by grinding. A drift layer may be n-type, and various n-type regions and p-type regions in the top surface contact a top metal electrode. A blanket dopant implant through the bottom surface of the thinned wafer is performed to form an n− buffer layer and a bottom p+ emitter layer. Energetic particles are injected through the bottom surface to intentionally damage the crystalline structure. A wet etch is performed, which etches the damaged crystal at a much greater rate, so some areas of the n− buffer layer are exposed. The bottom surface is metallized. The areas where the metal contacts the n− buffer layer form cathodes of an anti-parallel diode for conducting reverse voltages, such as voltage spikes from inductive loads.

公开(公告)号：US11349021B2

公开(公告)日：2022-05-31

申请号：US16827925

申请日：2020-03-24

申请人： Littelfuse, Inc.

发明人： Koichiro Yoshimoto

IPC分类号： H01L29/74 ,  H01L29/745 ,  H01L23/495 ,  H03K17/60 ,  H01L29/66 ,  H01L23/367 ,  H01L29/747

摘要： A power control switch assembly. The assembly may include a thyristor device, where the thyristor device includes a first device terminal, a second device terminal, and a gate terminal> The assembly may include a negative temperature coefficient (NTC) device, electrically coupled to the gate terminal of the thyristor device on a first end, and electrically coupled to the first device terminal of the thyristor device on a second end, wherein the NTC device is thermally coupled to the thyristor device.

公开(公告)号：US11289619B2

公开(公告)日：2022-03-29

申请号：US16671729

申请日：2019-11-01

申请人： Dell Products L.P.

发明人： Gian Martini ,  Mauricio Martins da Costa

IPC分类号： H01L29/66 ,  H05B47/19 ,  H04W52/02 ,  G06F1/3206 ,  H01L31/111 ,  H01L29/745 ,  H01L29/417

摘要： Methods, apparatus, and processor-readable storage media for automatically limiting power consumption by devices using infrared or radio communications are provided herein. An example computer-implemented method includes detecting, via at least one photodiode of an emitting sensor, one or more signals output by a user device within a predetermined proximity; automatically transitioning, via utilizing at least one transistor connected to the photodiode, and in response to detecting the one or more signals, the emitting sensor from a first power-consumption state to a second power-consumption state; transmitting one or more signals in response to transitioning from the first power-consumption state to the second power-consumption state; and subsequent to transmitting, automatically transitioning, via utilizing the at least one transistor, the emitting sensor from the second power-consumption state to the first power-consumption state after a predetermined amount of time has elapsed during which no signals were detected.

公开(公告)号：US11177350B2

公开(公告)日：2021-11-16

申请号：US16844113

申请日：2020-04-09

申请人： FUJI ELECTRIC CO., LTD.

发明人： Keiji Okumura

IPC分类号： H01L29/78 ,  H01L29/10 ,  H01L29/739 ,  H01L29/08 ,  H01L29/423 ,  H01L29/417 ,  H01L29/66 ,  H01L29/16 ,  H01L29/745 ,  H01L21/04 ,  H01L29/06 ,  H01L29/04

摘要： An insulated-gate semiconductor device, which has trenches arranged in a chip structure, the trenches defining both sidewalls in a first and second sidewall surface facing each other, includes: a first unit cell including a main-electrode region in contact with a first sidewall surface of a first trench, a base region in contact with a bottom surface of the main-electrode region and the first sidewall surface, a drift layer in contact with a bottom surface of the base region and the first sidewall surface, and a gate protection-region in contact with the second sidewall surface and a bottom surface of the first trench; and a second unit cell including an operation suppression region in contact with a first sidewall surface and a second sidewall surface of a second trench, wherein the second unit cell includes the second trench located at one end of an array of the trenches.

公开(公告)号：US20210305415A1

公开(公告)日：2021-09-30

申请号：US16827925

申请日：2020-03-24

申请人： Littelfuse, Inc.

发明人： Koichiro Yoshimoto

IPC分类号： H01L29/745 ,  H01L23/495 ,  H01L29/66 ,  H03K17/60

摘要： A power control switch assembly. The assembly may include a thyristor device, where the thyristor device includes a first device terminal, a second device terminal, and a gate terminal> The assembly may include a negative temperature coefficient (NTC) device, electrically coupled to the gate terminal of the thyristor device on a first end, and electrically coupled to the first device terminal of the thyristor device on a second end, wherein the NTC device is thermally coupled to the thyristor device.