FET DRIVER CIRCUIT
    1.
    发明公开
    FET DRIVER CIRCUIT 审中-公开

    公开(公告)号:US20240313746A1

    公开(公告)日:2024-09-19

    申请号:US18594207

    申请日:2024-03-04

    申请人: Qorvo US, Inc.

    发明人: Masashi Nogawa

    摘要: Embodiments of a power switching system are disclosed. In some embodiments, the system includes: a power transistor having a control terminal, a first transistor terminal, and a second transistor terminal; a current buffer that includes a bipolar junction transistor connected across the control terminal and the first transistor terminal, the bipolar junction transistor having a base; a gate driver circuit having a first circuit branch connected to the base of the bipolar junction transistor and a second circuit branch connected to the base of the bipolar junction transistor, wherein: the first circuit branch includes a first switch for opening and closing the first circuit branch; the second circuit branch includes a second switch for opening and closing the second circuit branch and a current source. In some embodiments, the power transistor is a Silicon Carbide field effect transistor or a Gallium Nitride field effect transistor.

    CIRCUIT AND SYSTEM FOR THE REDUCTION OF VOLTAGE OVERSHOOT IN POWER SWITCHES

    公开(公告)号:US20240213975A1

    公开(公告)日:2024-06-27

    申请号:US18438707

    申请日:2024-02-12

    摘要: An electronic circuit for controlling a power switch having a gate input, includes a signal generator configured to generate a gate driver input signal. The gate driver input signal has a first voltage during a first period of time, a second voltage during a second period of time, and toggles between the first voltage and the second voltage during a third period of time. The electronic circuit also includes a gate driver configured to receive the gate driver input signal and to provide a gate driver output signal based on the gate driver input signal. The signal generator is configured to cause the gate driver input signal to toggle during the third period of time such that the gate driver output signal has a third voltage during the second period of time, and an intermediate voltage that is less than the third voltage during the third period of time.

    CONTROLLED CURVATURE CORRECTION IN HIGH ACCURACY THERMAL SENSOR

    公开(公告)号:US20240175762A1

    公开(公告)日:2024-05-30

    申请号:US18432943

    申请日:2024-02-05

    IPC分类号: G01K7/00 H03K17/60

    摘要: A method includes generating a voltage proportional to absolute temperature, generating an uncorrected voltage complementary to absolute temperature, and generating a correction voltage. The method further includes selectively sampling the voltage proportional to absolute temperature, the uncorrected voltage complementary to absolute temperature, and the correction voltage, providing those sampled voltages to inputs of an integrator, and then quantizing outputs of the integrator to produce a bitstream. The method continues with causing the integrator to integrate the voltage proportional to absolute temperature or causing the integrator to add the correction voltage to the uncorrected voltage complementary to absolute temperature to produce a corrected voltage complementary to absolute temperature and then integrate the corrected voltage complementary to absolute temperature, depending upon a most recent bit of the bitstream. The bitstream is filtered and decimated to produce a voltage indicative of a temperature of a chip on which the method is performed.

    CIRCUIT AND SYSTEM FOR THE REDUCTION OF VOLTAGE OVERSHOOT IN POWER SWITCHES

    公开(公告)号:US20240063783A1

    公开(公告)日:2024-02-22

    申请号:US17820424

    申请日:2022-08-17

    摘要: An electronic circuit for controlling a power switch having a gate input, includes a signal generator configured to generate a gate driver input signal. The gate driver input signal has a first voltage during a first period of time, a second voltage during a second period of time, and toggles between the first voltage and the second voltage during a third period of time. The electronic circuit also includes a gate driver configured to receive the gate driver input signal and to provide a gate driver output signal based on the gate driver input signal. The signal generator is configured to cause the gate driver input signal to toggle during the third period of time such that the gate driver output signal has a third voltage during the second period of time, and an intermediate voltage that is less than the third voltage during the third period of time.

    Circuit and system for the reduction of voltage overshoot in power switches

    公开(公告)号:US11901881B1

    公开(公告)日:2024-02-13

    申请号:US17820424

    申请日:2022-08-17

    摘要: An electronic circuit for controlling a power switch having a gate input, includes a signal generator configured to generate a gate driver input signal. The gate driver input signal has a first voltage during a first period of time, a second voltage during a second period of time, and toggles between the first voltage and the second voltage during a third period of time. The electronic circuit also includes a gate driver configured to receive the gate driver input signal and to provide a gate driver output signal based on the gate driver input signal. The signal generator is configured to cause the gate driver input signal to toggle during the third period of time such that the gate driver output signal has a third voltage during the second period of time, and an intermediate voltage that is less than the third voltage during the third period of time.

    Differential circuitry
    8.
    发明授权

    公开(公告)号:US11863199B2

    公开(公告)日:2024-01-02

    申请号:US17959887

    申请日:2022-10-04

    申请人: Socionext Inc.

    发明人: Saul Darzy

    摘要: Differential circuitry including first and second current paths each including a succession of first and further load nodes, each successive further load node connected to its preceding load node via a divider impedance; and first switching circuitry connected to the further load node or nodes of the first current path, and second switching circuitry connected to the further load node or nodes of the second current path, the first and second switching circuitry controlling a magnitude of controllable current signals passing through the load nodes of the first current path and the second current path, respectively, wherein: the first load nodes of the first and second current paths include a first pair of load nodes, and the or each successive further load node of the first current path and its corresponding successive further load node of the second current path include a successive further pair of load nodes.

    ELECTRET MICROPHONE
    10.
    发明公开
    ELECTRET MICROPHONE 审中-公开

    公开(公告)号:US20230396932A1

    公开(公告)日:2023-12-07

    申请号:US18203974

    申请日:2023-05-31

    IPC分类号: H04R19/01 H03K17/60 H04R3/00

    摘要: An electret microphone is provided, comprising a microphone capsule with an output connection, a first input connection as an earth connection and a second input connection for providing a supply voltage for the microphone capsule and for leading out a microphone output signal of the microphone capsule, and a cascode consisting of a first and second transistor. An output connection of the microphone capsule is provided as input of the cascode. The second transistor is configured as a field effect transistor FET and the gate connection thereof is coupled to the output connection of the microphone capsule. A drain connection of the second transistor is coupled to an emitter connection of the first transistor as bipolar transistor or to a source connection of the first transistor as an FET transistor. Furthermore, a third transistor is provided as bipolar transistor, whose emitter connection is coupled to the second input connection. A collector connection of the third transistor is coupled via a capacitor to earth. A base connection of the third transistor is coupled via a resistance to the second input connection. The base connection of the third transistor is coupled to a collector connection of the first transistor as bipolar transistor or to a drain connection of the first transistor as FET transistor. A resistance is coupled between the drain connection of the second transistor and the collector connection of the third transistor.