发明公开
- 专利标题: FET DRIVER CIRCUIT
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申请号: US18594207申请日: 2024-03-04
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公开(公告)号: US20240313746A1公开(公告)日: 2024-09-19
- 发明人: Masashi Nogawa
- 申请人: Qorvo US, Inc.
- 申请人地址: US NC Greensboro
- 专利权人: Qorvo US, Inc.
- 当前专利权人: Qorvo US, Inc.
- 当前专利权人地址: US NC Greensboro
- 主分类号: H03K3/013
- IPC分类号: H03K3/013 ; H03K17/60 ; H03K17/687
摘要:
Embodiments of a power switching system are disclosed. In some embodiments, the system includes: a power transistor having a control terminal, a first transistor terminal, and a second transistor terminal; a current buffer that includes a bipolar junction transistor connected across the control terminal and the first transistor terminal, the bipolar junction transistor having a base; a gate driver circuit having a first circuit branch connected to the base of the bipolar junction transistor and a second circuit branch connected to the base of the bipolar junction transistor, wherein: the first circuit branch includes a first switch for opening and closing the first circuit branch; the second circuit branch includes a second switch for opening and closing the second circuit branch and a current source. In some embodiments, the power transistor is a Silicon Carbide field effect transistor or a Gallium Nitride field effect transistor.
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