-
公开(公告)号：US20200013932A1
公开(公告)日：2020-01-09
申请号：US16480485
申请日：2018-01-17
申请人： LG INNOTEK CO., LTD.
发明人： Ji Hyung MOON , Kyoung Un KIM , Sun Woo PARK , June O SONG , Sun Woo OH , Sang Jun LEE , Hwan Hee JEONG , Myung Ho HAN
摘要： A semiconductor device package according to the present invention comprises: a semiconductor device including a substrate, a light-emitting structure, and a first pad and second pad electrically connected to the light-emitting structure; a wavelength converting unit disposed to surround the upper surface and side surfaces of the semiconductor device; and a light control unit disposed on the wavelength converting unit, wherein the wavelength converting unit may include an upper surface spaced a first spacing interval apart in a vertical direction from the semiconductor device, and a side surface spaced a second spacing interval apart in a horizontal direction from the semiconductor device. The present invention relates to a semiconductor device package and a light source module. A semiconductor device package according to the present invention may include a semiconductor device for emitting light, a wavelength converting unit, and a light control unit and may emit white light in directions of four side surfaces surrounding the wavelength converting unit and in an upward direction of the light control unit. A wavelength converting unit according to the present invention may be disposed at the upper surface of a semiconductor device and four side surfaces surrounding the semiconductor device, receive light emitted from the semiconductor device and incident thereto and diffuse the received light, convert the wavelength of light incident thereto and provide the converted light, and emit white light in four side surface directions and in an upward direction. A light control unit according to the present invention may be disposed on the upper surface of a wavelength converting unit, reflect a part of white light incident thereon from the wavelength converting unit, and transmit a part of the white light.
-
公开(公告)号：US20190115328A1
公开(公告)日：2019-04-18
申请号：US16083134
申请日：2017-03-07
申请人： LG INNOTEK CO., LTD.
发明人： Sang Youl LEE , Chung Song KIM , Ji Hyung MOON , Sun Woo PARK , June O SONG
摘要： The semiconductor element according to an embodiment comprises: a light-emitting structure comprising a p-type semiconductor layer, an active layer disposed under the p-type semiconductor layer, and an n-type semiconductor layer disposed under the active layer; a protective layer disposed on the side surface and upper surface of the light-emitting structure; a p-type contact layer disposed over the p-type semiconductor layer; and an n-type contact layer disposed under the n-type semiconductor layer, wherein: the width of the lower surface of the n-type semiconductor layer is provided greater than that of the lower surface of the p-type semiconductor layer; the width of the upper surface of the n-type contact layer is provided greater than that of the upper surface of the n-type semiconductor layer; and the angle between the lower surface of the n-type semiconductor layer and the side surface of the light-emitting structure may be 30-80 degrees.
-
公开(公告)号：US20210036187A1
公开(公告)日：2021-02-04
申请号：US16761008
申请日：2018-11-02
申请人： LG INNOTEK CO., LTD.
发明人： Sang Youl LEE , Chung Song KIM , Ji Hyung MOON , Sun Woo PARK , Hyeon Min CHO
IPC分类号： H01L33/20 , H01L25/075 , H01L33/00 , H01L25/16
摘要： Disclosed is a semiconductor device including a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, a first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer. The semiconductor structure includes a first upper surface on which the first semiconductor layer is exposed, a second upper surface on which the second semiconductor layer is disposed, an inclined surface connecting the first upper surface and the second upper surface, and a recess formed between the first upper surface and the inclined surface. The recess has a depth less than or equal to 30% of a vertical distance between the first upper surface and the second upper surface.
-
公开(公告)号：US20190378873A1
公开(公告)日：2019-12-12
申请号：US16463730
申请日：2017-11-24
申请人： LG INNOTEK CO., LTD.
发明人： Sang Youl LEE , Chung Song KIM , Ji Hyung MOON , Sun Woo PARK , Hyeon Min CHO
IPC分类号： H01L27/15 , H01L25/065
摘要： One embodiment discloses a semiconductor device comprising: a plurality of light-emitting units; a plurality of wavelength conversion layers each disposed on the plurality of light-emitting units; partitions disposed between the plurality of light-emitting units and between the plurality of wavelength conversion layers; a plurality of color filters each disposed on the plurality of wavelength conversion layers; and black matrix disposed between the plurality of color filters.
-
公开(公告)号：US20180151778A1
公开(公告)日：2018-05-31
申请号：US15576563
申请日：2016-05-25
申请人： LG INNOTEK CO., LTD.
发明人： Sun Woo PARK , Dong Hyun SUNG , Dae Hee LEE , Byoung Woo LEE , Kwang Ki CHOI , Jae Cheon HAN
IPC分类号： H01L33/38 , H01L33/42 , H01L33/40 , H01L33/44 , H01L33/62 , H01L33/30 , H01L33/32 , H01L33/06
CPC分类号： H01L33/387 , H01L33/0016 , H01L33/06 , H01L33/14 , H01L33/30 , H01L33/32 , H01L33/36 , H01L33/382 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/62
摘要： Disclosed according to one embodiment is a light-emitting element comprising: a light-emitting structure comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a second conductive layer electrically connected to the second semiconductor layer; a first conductive layer comprising a plurality of through electrodes electrically connected to the first semiconductor layer through the second conductive layer and the light-emitting structure; an insulation layer for electrically insulating the plurality of through electrodes from the active layer, the second semiconductor layer, and the second conductive layer; and an electrode pad disposed in an exposed area of the second conductive layer, wherein the plurality of through electrodes differ in the area of a first region electrically connected to the first semiconductor layer.
-
公开(公告)号：US20200286949A1
公开(公告)日：2020-09-10
申请号：US16648860
申请日：2018-09-19
申请人： LG INNOTEK CO., LTD.
发明人： Sang Youl LEE , Chung Song KIM , Yong Tae MOON , Ji Hyung MOON , Sun Woo PARK , Hyeon Min CHO
摘要： Disclosed in an embodiment is a display device comprising a panel substrate and a plurality of semiconductor devices disposed on the panel substrate, wherein the panel substrate includes first and second regions disposed in a first direction, the plurality of semiconductor devices include a plurality of first semiconductor devices disposed in the first region and a plurality of second semiconductor devices disposed in the second region, the wavelength deviation between the first semiconductor device disposed at the edge of the first region and the second semiconductor device disposed at the edge of the second region is within 2 nm, and the wavelength pattern of the plurality of first semiconductor devices in the first direction is the same as the wavelength pattern of the plurality of second semiconductor devices in the first direction.
-
公开(公告)号：US20190386180A1
公开(公告)日：2019-12-19
申请号：US16466993
申请日：2017-12-06
申请人： LG INNOTEK CO., LTD.
发明人： Sung Min HWANG , Sun Woo PARK , Chang Hyeong LEE
IPC分类号： H01L33/40 , F21K9/00 , H01L33/10 , H01L33/62 , H01L33/38 , H01L33/46 , H01L33/30 , H01L33/42
摘要： The embodiments of the present invention relate to a light emitting device, a method for manufacturing a light emitting device, a light emitting device package, and a lighting device.A light emitting device according to an embodiment has: a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; a passivation layer disposed on the light emitting structure; and an insulating reflective layer disposed on the passivation layer.The passivation layer may include a first region disposed on an upper surface of the light emitting structure, and a second region disposed on side surfaces of the first conductivity type semiconductor layer, the second conductivity type semiconductor layer, and the active layer.The insulating reflective layer may be disposed on the first region, and an end portion of the insulating reflective layer may be disposed apart from an end portion of the first region.
-
公开(公告)号：US20190378760A1
公开(公告)日：2019-12-12
申请号：US16475874
申请日：2018-01-05
申请人： LG INNOTEK CO., LTD.
发明人： Sang Youl LEE , Chung Song KIM , Ji Hyung MOON , Sun Woo PARK , Hyeon Min CHO
IPC分类号： H01L21/78 , H01L27/15 , H01L21/52 , H01L21/268 , H05B33/10
摘要： An embodiment provides a display device manufacturing method comprising the steps of: preparing a substrate having a plurality of semiconductor chips arranged thereon (S1); bonding at least one first semiconductor chip of the plurality of semiconductor chips to a transfer member (S2); irradiating laser light to the first semiconductor chip to separate the first semiconductor chip from the substrate (S3); disposing the first semiconductor chip on a panel substrate of a display device by means of the transfer member (S4); and irradiating light to the transfer member to separate the first semiconductor chip from the transfer member (S5), wherein the transfer member comprises: a transfer layer and a bonding layer disposed on one surface of the transfer layer; the bonding layer comprises at least one bonding protrusion; and the first semiconductor chip is bonded to the bonding protrusion in step S2.
-
公开(公告)号：US20190131494A1
公开(公告)日：2019-05-02
申请号：US16090051
申请日：2017-03-28
申请人： LG INNOTEK CO., LTD.
发明人： Sang Youl LEE , Chung Song KIM , Ji Hyung MOON , Sun Woo PARK , June O SONG
IPC分类号： H01L33/38 , G09G3/22 , G09G3/3266 , G09G3/3258 , H01L27/12 , H01L29/417 , H01L29/423
摘要： A semiconductor device, according to one embodiment, may comprise: a light-emitting structure comprising a first conductivity type semiconductor layer, an active layer disposed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed on the active layer; a transistor disposed on the light-emitting structure and comprising a semiconductor layer, a source electrode, a gate electrode, and a drain electrode; a second electrode disposed on the second conductivity type semiconductor layer and electrically connected to the drain electrode and the second conductivity type semiconductor layer; a first bonding pad disposed on the light-emitting structure and electrically connected to the first conductivity type semiconductor layer; a second bonding pad disposed on the transistor and electrically connected to the source electrode; and a third bonding pad disposed on the transistor and electrically connected to the gate electrode.
-
公开(公告)号：US20190115509A1
公开(公告)日：2019-04-18
申请号：US16089944
申请日：2017-03-29
申请人： LG INNOTEK CO., LTD.
发明人： Sang Youl LEE , Chung Song KIM , Ji Hyung MOON , Sun Woo PARK
摘要： One embodiment relates to a light-emitting device, a backlight unit and a lighting device. The light-emitting device of the embodiment includes a light-emitting structure and a phosphor layer disposed on the light-emitting structure. The first and second pads are electrically connected with the light-emitting structure, wherein the phosphor layer is disposed on one side of the light-emitting device, and the first and second pads are disposed on the lower part of the light-emitting device. Thus a side view-type light-emitting device having a simplified structure can be enabled. Thus, the embodiment can enable thinning and slimming by means of the simplified structure.
-
-
-
-
-
-
-
-
-
搜索结果
14 条记录 (耗时 0.019 秒)
