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公开(公告)号：US08916885B2
公开(公告)日：2014-12-23
申请号：US13197671
申请日：2011-08-03
CPC分类号： H01L33/38 , H01L33/0016 , H01L33/08 , H01L33/20
摘要： The present invention introduces the novel, improved design approach of the semiconductor devices that utilize the effect of carrier recombination, for example, to produce the electromagnetic radiation. The approach is based on the separate control over the injection of the electrons and holes into the active region of the device. As a result, better recombination efficiencies can be achieved, and the effect of the wavelength shift of the produced radiation can be eliminated. The devices according to the present invention outperform existing solid state light and electromagnetic radiation sources and can be used in any applications where solid state light sources are currently involved, as well as any applications future discovered.
摘要翻译： 本发明介绍了利用载波复合效应的半导体器件的新型改进的设计方法，例如产生电磁辐射。 该方法基于对电子和空穴注入器件的有源区域的单独控制。 因此，可以实现更好的复合效率，并且可以消除所产生的辐射的波长偏移的影响。 根据本发明的装置优于现有的固态光和电磁辐射源，并且可以用于当前涉及固态光源的任何应用以及将来发现的任何应用。
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公开(公告)号：US20120032210A1
公开(公告)日：2012-02-09
申请号：US13197671
申请日：2011-08-03
IPC分类号： H01L33/20
CPC分类号： H01L33/38 , H01L33/0016 , H01L33/08 , H01L33/20
摘要： The present invention introduces the novel, improved design approach of the semiconductor devices that utilize the effect of carrier recombination, for example, to produce the electromagnetic radiation. The approach is based on the separate control over the injection of the electrons and holes into the active region of the device. As a result, better recombination efficiencies can be achieved, and the effect of the wavelength shift of the produced radiation can be eliminated. The devices according to the present invention outperform existing solid state light and electromagnetic radiation sources and can be used in any applications where solid state light sources are currently involved, as well as any applications future discovered.
摘要翻译： 本发明介绍了利用载波复合效应的半导体器件的新型改进的设计方法，例如产生电磁辐射。 该方法基于对电子和空穴注入器件的有源区域的单独控制。 因此，可以实现更好的复合效率，并且可以消除所产生的辐射的波长偏移的影响。 根据本发明的装置优于现有的固态光和电磁辐射源，并且可以用于当前涉及固态光源的任何应用以及将来发现的任何应用。
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公开(公告)号：US20120052679A1
公开(公告)日：2012-03-01
申请号：US13222800
申请日：2011-08-31
IPC分类号： H01L21/28
CPC分类号： H01L21/28575 , H01L29/2003 , H01L2933/0016
摘要： A method of providing a metal contact to n-type Gallium Nitride is disclosed. The method does not require high temperatures that often lead to a degradation of semiconductor materials, dielectric films, interfaces and/or metal-semiconductor junctions. The method can be applied at practically any step of a semiconductor device fabrication process and results in high quality ohmic contact with low contact resistance and high current handling capability. Present invention significantly simplifies the fabrication process of semiconductor devices, such as Gallium Nitride-based Light Emitting Diodes and Laser Diodes, while improving the resulting performance of the said devices. The invention can also be applied to improve the performance of electronic devices based on Gallium Nitride material system, especially where an additional annealing step is beneficial during the fabrication process.
摘要翻译： 公开了一种向n型氮化镓提供金属接触的方法。 该方法不需要经常导致半导体材料，介电膜，界面和/或金属 - 半导体结的降解的高温。 该方法可以应用于半导体器件制造工艺的几乎任何步骤，并且导致具有低接触电阻和高电流处理能力的高质量欧姆接触。 本发明显着简化了诸如基于氮化镓的发光二极管和激光二极管等半导体器件的制造工艺，同时改善了所述器件的性能。 本发明也可以应用于提高基于氮化镓材料系统的电子器件的性能，特别是在制造过程中额外的退火步骤是有益的。
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