公开(公告)号：US20230163239A1

公开(公告)日：2023-05-25

申请号：US18099583

申请日：2023-01-20

申请人： EPISTAR CORPORATION

发明人： Yen-Chun TSENG ,  Kuo-Feng HUANG ,  Shih-Chang LEE ,  Ming-Ta CHIN ,  Shih-Nan YEN ,  Cheng-Hsing CHIANG ,  Chia-Hung LIN ,  Cheng-Long YEH ,  Yi-Ching LEE ,  Jui-Che SUNG ,  Shih-Hao CHENG

IPC分类号： H01L33/14 ,  H01L33/08 ,  H01L33/20 ,  H01L33/02

CPC分类号： H01L33/14 ,  H01L33/08 ,  H01L33/20 ,  H01L33/025

摘要： A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and located between the first semiconductor structure and the second semiconductor structure. Each semiconductor pair includes a barrier layer and a well layer and includes the first dopant. The active region does not include a nitrogen element. A doping concentration of the first dopant in the first semiconductor structure is higher than a doping concentration of the first dopant in the active region.

公开(公告)号：US20210305456A1

公开(公告)日：2021-09-30

申请号：US17211331

申请日：2021-03-24

申请人： EPISTAR CORPORATION

发明人： Jian-Zhi CHEN ,  Yen-Chun TSENG ,  Hui-Fang KAO ,  Yao-Ning CHAN ,  Yi-Tang LAI ,  Yun-Chung CHOU ,  Shih-Chang LEE ,  Chen OU

IPC分类号： H01L33/36 ,  H01L33/20 ,  H01L33/38 ,  H01L25/075

摘要： The present disclosure provides a semiconductor light-emitting device and a semiconductor light-emitting component. The semiconductor light-emitting device includes a substrate, a first semiconductor contact layer, a semiconductor light-emitting stack including an active layer, a first-conductivity-type contact structure, a second semiconductor contact layer, a second-conductivity-type contact structure and a first electrode pad. The first-conductivity-type contact structure is electrically connected to the first semiconductor contact layer. The second-conductivity-type contact structure is electrically connected to the second semiconductor contact layer. The first-conductivity-type contact structure has a first bottom surface and a first top surface, and the active layer has a second bottom surface and a second top surface. The first bottom surface is lower than the second bottom surface, and the first top surface is higher than the second top surface in a cross-sectional view of the semiconductor light-emitting device.