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    OPTOELECTRONIC SEMICONDUCTOR DEVICE
    2.
    发明申请
    OPTOELECTRONIC SEMICONDUCTOR DEVICE 审中-公开
    光电半导体器件

    公开(公告)号：US20160372635A1

    公开(公告)日：2016-12-22

    申请号：US15256263

    申请日：2016-09-02

    申请人： EPISTAR CORPORATION

    发明人： Tsun-Kai KO ,  Schang-Jing HON ,  Chien-Kai CHUNG ,  Hui-Chun YEH ,  An-Ju LIN ,  Chien-Fu SHEN ,  Chen OU

    IPC分类号： H01L33/38 ,  H01L33/42 ,  H01L33/22 ,  H01L33/06 ,  H01L33/14

    CPC分类号： H01L33/387 ,  H01L33/06 ,  H01L33/14 ,  H01L33/22 ,  H01L33/382 ,  H01L33/42 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An optoelectronic semiconductor device comprises a substrate; a semiconductor system including a first conductivity layer, a second conductivity layer, and a conversion unit between the first conductivity layer and the second conductivity layer, wherein the first conductivity layer is closer to the substrate than the second conductivity layer is to the substrate, and the second conductivity layer comprises a top surface perpendicular to a thickness direction of the semiconductor system, and in a top view of the semiconductor system, an outline of the first conductivity layer surrounds an outline of the second conductivity layer; a first electrical connector on the first conductivity layer of the semiconductor system; a second electrical connector comprising a shape formed on the second conductivity layer of the semiconductor system; and a contact layer formed on the top surface of the second conductivity layer and having an outer perimeter at an inner side of the outline of the second conductivity layer in the top view of the semiconductor system, wherein the contact layer comprises a discontinuous region exposing the top surface of the second conductivity layer, the discontinuous region is formed along the shape of the second electrical connector.

    摘要翻译： 光电子半导体器件包括衬底; 包括第一导电层，第二导电层和第一导电层与第二导电层之间的转换单元的半导体系统，其中第一导电层比第二导电层更靠近基板，并且 所述第二导电层包括垂直于所述半导体系统的厚度方向的顶表面，并且在所述半导体系统的俯视图中，所述第一导电层的轮廓围绕所述第二导电层的轮廓; 在半导体系统的第一导电层上的第一电连接器; 第二电连接器，包括形成在半导体系统的第二导电层上的形状; 以及形成在所述第二导电层的顶表面上并且在所述半导体系统的顶视图中在所述第二导电层的轮廓的内侧具有外周的接触层，其中所述接触层包括暴露所述第二导电层的不连续区域 第二导电层的顶表面沿着第二电连接器的形状形成不连续区域。

    LIGHT-EMITTING DEVICE
    3.
    发明申请
    LIGHT-EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20150236205A1

    公开(公告)日：2015-08-20

    申请号：US14185586

    申请日：2014-02-20

    申请人： Epistar Corporation

    发明人： Chien-Kai CHUNG ,  Po-Shun CHIU ,  Hsin-Ying Wang ,  De-Shan KUO ,  Tsun-Kai Ko ,  Yu-Ting Huang

    IPC分类号： H01L33/38 ,  H01L33/22

    CPC分类号： H01L33/22 ,  H01L33/145 ,  H01L33/20 ,  H01L33/38 ,  H01L33/382

    摘要： A light-emitting device comprises: a light-emitting stack comprising a first side, a second side opposite to the first side, and an upper surface between the first side and the second side; a first electrode pad formed on the upper surface; a second electrode pad formed on the upper surface, and the first electrode pad is closer to the first side than the second electrode pad; and a first extension electrode comprising a first section extended from the first electrode pad toward the second electrode pad, and a second section extended from the first electrode pad toward the first side.

    摘要翻译： 发光装置包括：发光堆叠，包括第一侧，与第一侧相对的第二侧和在第一侧和第二侧之间的上表面; 形成在上表面上的第一电极焊盘; 形成在所述上表面上的第二电极焊盘，并且所述第一电极焊盘比所述第二电极焊盘更靠近所述第一侧; 以及第一延伸电极，包括从第一电极焊盘朝向第二电极焊盘延伸的第一部分，以及从第一电极焊盘朝向第一侧延伸的第二部分。

    LIGHT-EMITTING STRUCTURE
    4.
    发明申请
    LIGHT-EMITTING STRUCTURE 审中-公开

    公开(公告)号：US20190035846A1

    公开(公告)日：2019-01-31

    申请号：US16037862

    申请日：2018-07-17

    申请人： EPISTAR CORPORATION

    发明人： Chien-Fu SHEN ,  Chao-Hsing CHEN ,  Tsun-Kai KO ,  Schang-Jing HON ,  Sheng-Jie HSU ,  De-Shan KUO ,  Hsin-Ying WANG ,  Chiu-Lin YAO ,  Chien-Fu HUANG ,  Hsin-Mao LIU ,  Chien-Kai CHUNG

    IPC分类号： H01L27/15 ,  H01L33/44 ,  H01L33/38 ,  H01L25/075 ,  H01L33/62 ,  H01L33/20

    摘要： Disclosed herein is a light-emitting device. The light-emitting device includes a substrate with a top surface; a first light-emitting structure unit and a second structure light-emitting unit disposed on the top surface, the first light-emitting structure unit and the second light-emitting structure unit being spaced apart from each other, wherein each of the first light-emitting structure unit and the second light-emitting structure unit includes a lower layer having a first conductivity and an upper layer having a second conductivity; a trench between the first light-emitting structure unit and the second light-emitting structure unit, including a bottom portion which is a part of the top surface; an isolation layer, disposed on the trench and covering the bottom portion; and an electrical connection, electrically connecting the first light-emitting structure unit and the second light-emitting structure unit; wherein the lower layer includes an inclined sidewall and the electrical connection contacts the inclined sidewall.

    LIGHT-EMITTING DEVICE
    6.
    发明申请
    LIGHT-EMITTING DEVICE 审中-公开

    公开(公告)号：US20170365741A1

    公开(公告)日：2017-12-21

    申请号：US15692759

    申请日：2017-08-31

    申请人： EPISTAR CORPORATION

    发明人： Chien-Kai CHUNG ,  Po-Shun CHIU ,  Hsin-Ying WANG ,  De-Shan KUO ,  Tsun-Kai KO ,  Yu-Ting HUANG

    IPC分类号： H01L33/22 ,  H01L33/20 ,  H01L33/38 ,  H01L33/14

    CPC分类号： H01L33/22 ,  H01L33/145 ,  H01L33/20 ,  H01L33/38 ,  H01L33/382

    摘要： A light-emitting device includes: a rectangular shape with a 1st side, a 2nd side opposite to the 1st side, and a 3rd side connecting the 1st and the 2nd sides; a first electrode pad formed adjacent to the 3rd side; a second electrode pad formed adjacent to the 2nd side; a first extension electrode, extending from the first electrode pad in a direction away from the 3rd side and bended toward the 2nd side; and a second extension electrode, including a first and a second branches respectively extending from the second electrode pad; wherein a distance between the first electrode pad and the 3rd side is smaller than a distance between the second electrode pad and the 3rd side; wherein an end portion of the first branch includes a first arc bending to the 3rd side and a minimum distance between the first branch and the 1st side is smaller than a minimum distance between the second branch and the 1st side.

    LIGHT-EMITTING STRUCTURE
    7.
    发明申请
    LIGHT-EMITTING STRUCTURE 审中-公开
    发光结构

    公开(公告)号：US20160307961A1

    公开(公告)日：2016-10-20

    申请号：US15196717

    申请日：2016-06-29

    申请人： EPISTAR CORPORATION

    发明人： Chien-Fu SHEN ,  Chao-Hsing CHEN ,  Tsun-Kai KO ,  Schang-Jing HON ,  Sheng-Jie HSU ,  De-Shan KUO ,  Hsin-Ying WANG ,  Chiu-Lin YAO ,  Chien-Fu HUANG ,  Hsin-Mao LIU ,  Chien-Kai CHUNG

    IPC分类号： H01L27/15 ,  H01L33/38 ,  H01L33/62 ,  H01L33/20 ,  H01L33/44

    CPC分类号： H01L27/156 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/20 ,  H01L33/382 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Disclosed herein is a light-emitting device. The light-emitting device includes a substrate; a first light-emitting unit and a second light-emitting unit, separately formed on the substrate; a trench between the first and the second light-emitting units, including a bottom portion exposing the substrate; an insulating layer, conformably formed on the trench and covering the bottom portion and sidewalls of the first and the second light-emitting units; and an electrical connection, formed on the insulating layer and electrically connecting the first and the second light-emitting units. The electrical connection includes a bridging portion covering the trench and a joining portion extending from the bridging portion and formed on the first and the second light-emitting units; wherein the bridging portion is wider than the joining portion; wherein a part of the insulating layer is formed under the joining portion.

    摘要翻译： 这里公开了一种发光装置。 发光装置包括：基板; 分别形成在基板上的第一发光单元和第二发光单元; 在第一和第二发光单元之间的沟槽，包括露出衬底的底部; 绝缘层，顺应地形成在沟槽上并覆盖第一和第二发光单元的底部和侧壁; 以及形成在绝缘层上并电连接第一和第二发光单元的电连接。 电气连接包括覆盖沟槽的桥接部分和从桥接部分延伸并形成在第一和第二发光单元上的接合部分; 其中所述桥接部分比所述接合部分宽; 其中，所述绝缘层的一部分形成在所述接合部的下方。

    LIGHT-EMITTING DEVICE AND THE MANUFACTURING METHOD THEREOF
    8.
    发明申请
    LIGHT-EMITTING DEVICE AND THE MANUFACTURING METHOD THEREOF 有权
    发光装置及其制造方法

    公开(公告)号：US20150060909A1

    公开(公告)日：2015-03-05

    申请号：US14013166

    申请日：2013-08-29

    申请人： Epistar Corporation

    发明人： Juin-Yang CHEN ,  De-Shan KUO ,  Chun-Hsiang TU ,  Po-Shun CHIU ,  Chien-Kai CHUNG ,  Hui-Chun YEH ,  Min-Yen TSAI ,  Tsun-Kai KO ,  Chun-Teng KO

    IPC分类号： H01L33/44 ,  H01L33/42

    CPC分类号： H01L33/38 ,  H01L33/0095 ,  H01L33/22 ,  H01L33/42

    摘要： A light-emitting device comprises: a first semiconductor layer; a transparent conductive oxide layer including a diffusion region having a first metal material and a non-diffusion region devoid of the first metal material, wherein the non-diffusion region is closer to the first semiconductor layer than the diffusion region; and a metal layer formed on the transparent conductive oxide layer, wherein the metal layer is pervious to a light emitted from the active layer and comprises a pattern.

    摘要翻译： 发光器件包括：第一半导体层; 透明导电氧化物层，其包括具有第一金属材料的扩散区域和不具有第一金属材料的非扩散区域，其中所述非扩散区域比所述扩散区域更靠近所述第一半导体层; 以及形成在所述透明导电氧化物层上的金属层，其中所述金属层可透过从所述有源层发射的光并且包括图案。