公开(公告)号：US20150060909A1

公开(公告)日：2015-03-05

申请号：US14013166

申请日：2013-08-29

申请人： Epistar Corporation

发明人： Juin-Yang CHEN ,  De-Shan KUO ,  Chun-Hsiang TU ,  Po-Shun CHIU ,  Chien-Kai CHUNG ,  Hui-Chun YEH ,  Min-Yen TSAI ,  Tsun-Kai KO ,  Chun-Teng KO

IPC分类号： H01L33/44 ,  H01L33/42

CPC分类号： H01L33/38 ,  H01L33/0095 ,  H01L33/22 ,  H01L33/42

摘要： A light-emitting device comprises: a first semiconductor layer; a transparent conductive oxide layer including a diffusion region having a first metal material and a non-diffusion region devoid of the first metal material, wherein the non-diffusion region is closer to the first semiconductor layer than the diffusion region; and a metal layer formed on the transparent conductive oxide layer, wherein the metal layer is pervious to a light emitted from the active layer and comprises a pattern.

摘要翻译： 发光器件包括：第一半导体层; 透明导电氧化物层，其包括具有第一金属材料的扩散区域和不具有第一金属材料的非扩散区域，其中所述非扩散区域比所述扩散区域更靠近所述第一半导体层; 以及形成在所述透明导电氧化物层上的金属层，其中所述金属层可透过从所述有源层发射的光并且包括图案。

公开(公告)号：US20210074890A1

公开(公告)日：2021-03-11

申请号：US17102171

申请日：2020-11-23

申请人： EPISTAR CORPORATION

发明人： De-Shan KUO ,  Ting-Chia KO ,  Chun-Hsiang TU ,  Po-Shun CHIU

IPC分类号： H01L33/42 ,  H01L33/40 ,  H01L27/15 ,  H01L33/06 ,  H01L33/08 ,  H01L33/30 ,  H01L33/32 ,  H01L33/60 ,  H01L33/62

摘要： A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.

公开(公告)号：US20170040491A1

公开(公告)日：2017-02-09

申请号：US15299754

申请日：2016-10-21

申请人： EPISTAR CORPORATION

发明人： Yen-Tai CHAO ,  Sen-Jung HSU ,  Tao-Chi CHANG ,  Wei-Chih WEN ,  Ou CHEN ,  Yu-Shou WANG ,  Chun-Hsiang TU ,  Jing-Feng HUANG

IPC分类号： H01L33/12 ,  H01L33/20 ,  H01L33/22 ,  H01L33/00 ,  H01L33/32 ,  H01L33/02

CPC分类号： H01L33/12 ,  H01L33/005 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/10 ,  H01L33/16 ,  H01L33/20 ,  H01L33/22 ,  H01L2933/0091

摘要： A light-emitting device comprises a substrate having an top surface; a first semiconductor stack comprising a first upper surface and a first side wall, wherein the first semiconductor stack is on the top surface and exposes an exposing portion of the top surface; a second semiconductor stack comprising a second side wall, wherein the second semiconductor stack is on the first upper surface and exposes an exposing portion of the first upper surface; wherein the first side wall and the exposing portion of the top surface form an acute angle a between thereof, and the second side wall and the exposing portion of the first upper surface form an obtuse angle β between thereof.

摘要翻译： 发光器件包括具有顶表面的衬底; 包括第一上表面和第一侧壁的第一半导体堆叠，其中所述第一半导体堆叠在所述顶表面上并暴露所述顶表面的暴露部分; 包括第二侧壁的第二半导体堆叠，其中所述第二半导体堆叠在所述第一上表面上并暴露所述第一上表面的暴露部分; 其中，顶表面的第一侧壁和暴露部分之间形成锐角α，并且第二侧壁和第一上表面的暴露部分之间形成钝角β。

公开(公告)号：US20220376143A1

公开(公告)日：2022-11-24

申请号：US17879547

申请日：2022-08-02

申请人： EPISTAR CORPORATION

发明人： De-Shan KUO ,  Ting-Chia KO ,  Chun-Hsiang TU ,  Po-Shun CHIU

IPC分类号： H01L33/42 ,  H01L33/40 ,  H01L27/15 ,  H01L33/06 ,  H01L33/08 ,  H01L33/30 ,  H01L33/32 ,  H01L33/60 ,  H01L33/62

摘要： A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.

公开(公告)号：US20190157507A1

公开(公告)日：2019-05-23

申请号：US16259410

申请日：2019-01-28

申请人： EPISTAR CORPORATION

发明人： Yen-Tai CHAO ,  Sen-Jung HSU ,  Tao-Chi CHANG ,  Wei-Chih WEN ,  Ou CHEN ,  Chun-Hsiang TU

IPC分类号： H01L33/22 ,  H01L33/12 ,  H01L33/00 ,  H01L33/20

CPC分类号： H01L33/22 ,  H01L33/005 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/10 ,  H01L33/12 ,  H01L33/16 ,  H01L33/20 ,  H01L2933/0091

摘要： A manufacturing method of a light-emitting device includes steps of: providing a substrate with a top surface, wherein the top surface comprises a plurality of concavo-convex structures; forming a semiconductor stack on the top surface; forming a trench in the semiconductor stack to define a plurality of second semiconductor stacks and expose a first upper surface; forming a scribing region which extends from the first upper surface into the semiconductor stack and exposes a side surface of the semiconductor stack to define a plurality of first semiconductor stacks; removing a portion of the plurality of first semiconductor stacks and a portion of the concavo-convex structures trough the region to form a first side wall of each of the first semiconductor stack; and dividing the substrate along the region; wherein the first side wall and the top surface form an acute angle α between thereof, 30°≤α≤80°

公开(公告)号：US20190067516A1

公开(公告)日：2019-02-28

申请号：US16118063

申请日：2018-08-30

申请人： EPISTAR CORPORATION

发明人： Chun-Hsiang TU ,  De-Shan KUO ,  Peng-Ren CHEN

IPC分类号： H01L33/12 ,  H01L33/18 ,  H01L33/10 ,  H01L33/20 ,  H01L33/32 ,  H01L33/00

摘要： The present disclosure provides a semiconductor device including a substrate, a first buffer structure and a semiconductor stack layer. The substrate includes a base part and a plurality of character parts connected to the base part. The first buffer structure is disposed on the base part and is separated from the plurality of character parts by at least one distance. The semiconductor stack layer is disposed on the first buffer structure and the plurality of character parts.

公开(公告)号：US20180374990A1

公开(公告)日：2018-12-27

申请号：US16051842

申请日：2018-08-01

申请人： EPISTAR CORPORATION

发明人： Yen-Tai CHAO ,  Sen-Jung HSU ,  Tao-Chi CHANG ,  Wei-Chih WEN ,  Ou CHEN ,  Yu-Shou Wang ,  Chun-Hsiang TU ,  Jing-Feng Huang

IPC分类号： H01L33/12 ,  H01L33/00 ,  H01L33/20 ,  H01L33/10 ,  H01L33/22 ,  H01L33/16

CPC分类号： H01L33/12 ,  H01L33/005 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/10 ,  H01L33/16 ,  H01L33/20 ,  H01L33/22 ,  H01L2933/0091

摘要： A light-emitting device includes a substrate having a top surface, wherein the top surface includes a first portion and a second portion; a first semiconductor stack including a first upper surface and a first side wall, wherein the first semiconductor stack is on the first portion; a second semiconductor stack including a second upper surface and a second side wall, wherein the second semiconductor stack is on the first upper surface, and wherein the second side wall is devoid of connecting the first side wall; a plurality of first concavo-convex structures on the first portion; and a plurality of second concavo-convex structures on the second portion; wherein the first side wall and the second portion of the top surface form an acute angle α between thereof; and wherein the second concavo-convex structures have smaller size than that of the first concavo-convex structures.

公开(公告)号：US20170069810A1

公开(公告)日：2017-03-09

申请号：US15357334

申请日：2016-11-21

申请人： EPISTAR CORPORATION

发明人： De-Shan KUO ,  Ting-Chia KO ,  Chun-Hsiang TU ,  Po-Shun CHIU

IPC分类号： H01L33/62 ,  H01L33/60 ,  H01L33/42 ,  H01L33/30 ,  H01L33/06 ,  H01L33/32

CPC分类号： H01L33/62 ,  H01L27/15 ,  H01L27/156 ,  H01L33/06 ,  H01L33/08 ,  H01L33/30 ,  H01L33/32 ,  H01L33/42 ,  H01L33/60

摘要： A light-emitting device comprises a first semiconductor layer; an active layer on the first semiconductor layer; a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises an adhesion layer on the second semiconductor layer, a conductive layer on the adhesion layer, and a bonding layer on the conductive layer, and wherein the electrode structure comprises a center region and an edge region, a thickness of each layer of the edge region of the electrode structure is smaller than that of the center region.

摘要翻译： 发光器件包括第一半导体层; 在第一半导体层上的有源层; 有源层上的第二半导体层; 以及在所述第二半导体层上的电极结构，其中所述电极结构包括在所述第二半导体层上的粘附层，所述粘合层上的导电层和所述导电层上的接合层，并且其中所述电极结构包括中心区域 和边缘区域，电极结构的边缘区域的每一层的厚度小于中心区域的边缘区域的厚度。

公开(公告)号：US20190334069A1

公开(公告)日：2019-10-31

申请号：US16510502

申请日：2019-07-12

申请人： EPISTAR CORPORATION

发明人： De-Shan KUO ,  Ting-Chia KO ,  Chun-Hsiang TU ,  Po-Shun CHIU

IPC分类号： H01L33/62 ,  H01L33/42 ,  H01L33/06 ,  H01L33/08 ,  H01L33/60 ,  H01L33/32 ,  H01L33/30 ,  H01L27/15

摘要： A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.

公开(公告)号：US20180138380A1

公开(公告)日：2018-05-17

申请号：US15854462

申请日：2017-12-26

申请人： EPISTAR CORPORATION

发明人： De-Shan KUO ,  Ting-Chia KO ,  Chun-Hsiang TU ,  Po-Shun CHIU

IPC分类号： H01L33/62 ,  H01L33/60 ,  H01L33/42 ,  H01L33/32 ,  H01L27/15 ,  H01L33/08 ,  H01L33/06 ,  H01L33/30

CPC分类号： H01L33/62 ,  H01L27/15 ,  H01L27/156 ,  H01L33/06 ,  H01L33/08 ,  H01L33/30 ,  H01L33/32 ,  H01L33/42 ,  H01L33/60

摘要： A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.