- 专利标题: LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
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申请号: US16051842申请日: 2018-08-01
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公开(公告)号: US20180374990A1公开(公告)日: 2018-12-27
- 发明人: Yen-Tai CHAO , Sen-Jung HSU , Tao-Chi CHANG , Wei-Chih WEN , Ou CHEN , Yu-Shou Wang , Chun-Hsiang TU , Jing-Feng Huang
- 申请人: EPISTAR CORPORATION
- 主分类号: H01L33/12
- IPC分类号: H01L33/12 ; H01L33/00 ; H01L33/20 ; H01L33/10 ; H01L33/22 ; H01L33/16
摘要:
A light-emitting device includes a substrate having a top surface, wherein the top surface includes a first portion and a second portion; a first semiconductor stack including a first upper surface and a first side wall, wherein the first semiconductor stack is on the first portion; a second semiconductor stack including a second upper surface and a second side wall, wherein the second semiconductor stack is on the first upper surface, and wherein the second side wall is devoid of connecting the first side wall; a plurality of first concavo-convex structures on the first portion; and a plurality of second concavo-convex structures on the second portion; wherein the first side wall and the second portion of the top surface form an acute angle α between thereof; and wherein the second concavo-convex structures have smaller size than that of the first concavo-convex structures.
公开/授权文献
- US10714657B2 Light-emitting device and manufacturing method thereof 公开/授权日:2020-07-14
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