公开(公告)号：US20220029055A1

公开(公告)日：2022-01-27

申请号：US17496132

申请日：2021-10-07

申请人： EPISTAR CORPORATION

发明人： Yen-Tai CHAO ,  Sen-Jung HSU ,  Tao-Chi CHANG ,  Wei-Chih WEN ,  Ou CHEN ,  Yu-Shou WANG ,  Chun-Hsiang TU ,  Jing-Feng HUANG

IPC分类号： H01L33/12 ,  H01L33/20 ,  H01L33/00

摘要： A light-emitting device includes: a substrate having a top surface, wherein the top surface comprises a first portion and a second portion; a first semiconductor stack on the first portion, comprising a first upper surface and a first side wall; and a second semiconductor stack on the first upper surface, comprising a second upper surface and a second side wall, and wherein the second side wall connects the first upper surface; wherein the first semiconductor stack comprises a dislocation stop layer; wherein the dislocation stop layer comprises AlGaN; and wherein the first side wall and the second portion of the top surface form an acute angle a between thereof

公开(公告)号：US20170040491A1

公开(公告)日：2017-02-09

申请号：US15299754

申请日：2016-10-21

申请人： EPISTAR CORPORATION

发明人： Yen-Tai CHAO ,  Sen-Jung HSU ,  Tao-Chi CHANG ,  Wei-Chih WEN ,  Ou CHEN ,  Yu-Shou WANG ,  Chun-Hsiang TU ,  Jing-Feng HUANG

IPC分类号： H01L33/12 ,  H01L33/20 ,  H01L33/22 ,  H01L33/00 ,  H01L33/32 ,  H01L33/02

CPC分类号： H01L33/12 ,  H01L33/005 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/10 ,  H01L33/16 ,  H01L33/20 ,  H01L33/22 ,  H01L2933/0091

摘要： A light-emitting device comprises a substrate having an top surface; a first semiconductor stack comprising a first upper surface and a first side wall, wherein the first semiconductor stack is on the top surface and exposes an exposing portion of the top surface; a second semiconductor stack comprising a second side wall, wherein the second semiconductor stack is on the first upper surface and exposes an exposing portion of the first upper surface; wherein the first side wall and the exposing portion of the top surface form an acute angle a between thereof, and the second side wall and the exposing portion of the first upper surface form an obtuse angle β between thereof.

摘要翻译： 发光器件包括具有顶表面的衬底; 包括第一上表面和第一侧壁的第一半导体堆叠，其中所述第一半导体堆叠在所述顶表面上并暴露所述顶表面的暴露部分; 包括第二侧壁的第二半导体堆叠，其中所述第二半导体堆叠在所述第一上表面上并暴露所述第一上表面的暴露部分; 其中，顶表面的第一侧壁和暴露部分之间形成锐角α，并且第二侧壁和第一上表面的暴露部分之间形成钝角β。