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公开(公告)号：US20150146426A1
公开(公告)日：2015-05-28
申请号：US14553446
申请日：2014-11-25
申请人： EPISTAR CORPORATION
发明人： Hui-Chun YEH
CPC分类号： H01L27/156 , H01L25/0753 , H01L33/08 , H01L33/38 , H01L33/62 , H01L2224/18 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/49107 , H01L2224/73265 , H01L2224/73267 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting diode device, comprising a substrate having a first surface, a plurality of light-emitting units formed on the first surface wherein the plurality of the light emitting units is serially-connected array which comprises a plurality of rows and columns. The plurality of the rows and columns contain at least three light emitting units respectively. The plurality of the light-emitting units in the plurality of light emitting unit rows and light emitting unit columns is connected vertically or horizontally and a plurality of conductive connecting structures contacts the plurality of the light-emitting units wherein at least three light-emitting units in the at least two of the adjacent rows having the same connecting direction and the light-emitting units in at least two of the adjacent light emitting unit rows and the light emitting units in the adjacent row contains one vertical connection and two horizontal connection.
摘要翻译： 一种发光二极管装置，包括具有第一表面的基板，形成在第一表面上的多个发光单元，其中多个发光单元是串联连接的阵列，其包括多个行和列。 多个行和列分别包含至少三个发光单元。 多个发光单元行和发光单元列中的多个发光单元垂直或水平连接，并且多个导电连接结构与多个发光单元接触，其中至少三个发光单元 在具有相同连接方向的相邻行中的至少两个相邻的发光单元行中的至少两个中的发光单元和相邻行中的发光单元中的发光单元包含一个垂直连接和两个水平连接。
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公开(公告)号：US20180212123A1
公开(公告)日：2018-07-26
申请号：US15874501
申请日：2018-01-18
申请人： EPISTAR CORPORATION
发明人： Li-Ming CHANG , Tzung-Shiun YEH , Chien-Fu SHEN , Yu-Rui LIN , Chen OU , Hsin-Ying WANG , Hui-Chun YEH
IPC分类号： H01L33/62
CPC分类号： H01L33/62 , F21K9/232 , F21Y2115/10 , H01L23/60 , H01L33/0016 , H01L33/06 , H01L33/14 , H01L33/20 , H01L33/22 , H01L33/30 , H01L33/32 , H01L33/38
摘要： A light-emitting element, includes a first edge, a second edge, a third edge and a fourth edge; a substrate; a semiconductor stack formed on the substrate, including a first semiconductor layer, a second semiconductor layer and an active layer formed therebetween; a transparent conductive layer, formed on the second semiconductor layer; a first electrode formed on the first semiconductor layer, including a first pad electrode and a first finger electrode extending from the first pad electrode; and a second electrode formed on the first second semiconductor layer, including a second pad electrode and a second finger electrode extending from the second pad electrode; wherein the first finger electrode is disposed at and along the first edge; and wherein in top view, an overlapping portions of the first finger electrode and the second finger electrode are non-parallel.
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公开(公告)号：US20180108705A1
公开(公告)日：2018-04-19
申请号：US15835837
申请日：2017-12-08
申请人： EPISTAR CORPORATION
发明人： Hui-Chun YEH
CPC分类号： H01L27/156 , H01L25/0753 , H01L33/08 , H01L33/38 , H01L33/62 , H01L2224/18 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/49107 , H01L2224/73265 , H01L2224/73267 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting diode device includes a substrate; a plurality of light-emitting units formed on the substrate, wherein the plurality of light-emitting units form a serially-connected array, and the serially-connected array includes: a plurality of adjacent light-emitting unit columns; a first light-emitting unit row; a second light-emitting unit row; and a third light-emitting unit row adjacent with the second light-emitting unit row; and a plurality of conductive connecting structures connecting the plurality of light-emitting units; wherein the light-emitting units in the first light-emitting unit rows having the same connecting direction; wherein the second and the third light-emitting unit rows include N light-emitting units with (N−1) times of sequentially connecting via (N−1) conductive connecting structures, and the (N−1) times of the sequentially connecting comprise (N/2) times of vertical connecting or (N/2) times of horizontal connections.
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公开(公告)号：US20160372635A1
公开(公告)日：2016-12-22
申请号：US15256263
申请日：2016-09-02
申请人： EPISTAR CORPORATION
发明人： Tsun-Kai KO , Schang-Jing HON , Chien-Kai CHUNG , Hui-Chun YEH , An-Ju LIN , Chien-Fu SHEN , Chen OU
CPC分类号： H01L33/387 , H01L33/06 , H01L33/14 , H01L33/22 , H01L33/382 , H01L33/42 , H01L33/44 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor device comprises a substrate; a semiconductor system including a first conductivity layer, a second conductivity layer, and a conversion unit between the first conductivity layer and the second conductivity layer, wherein the first conductivity layer is closer to the substrate than the second conductivity layer is to the substrate, and the second conductivity layer comprises a top surface perpendicular to a thickness direction of the semiconductor system, and in a top view of the semiconductor system, an outline of the first conductivity layer surrounds an outline of the second conductivity layer; a first electrical connector on the first conductivity layer of the semiconductor system; a second electrical connector comprising a shape formed on the second conductivity layer of the semiconductor system; and a contact layer formed on the top surface of the second conductivity layer and having an outer perimeter at an inner side of the outline of the second conductivity layer in the top view of the semiconductor system, wherein the contact layer comprises a discontinuous region exposing the top surface of the second conductivity layer, the discontinuous region is formed along the shape of the second electrical connector.
摘要翻译： 光电子半导体器件包括衬底; 包括第一导电层，第二导电层和第一导电层与第二导电层之间的转换单元的半导体系统，其中第一导电层比第二导电层更靠近基板，并且 所述第二导电层包括垂直于所述半导体系统的厚度方向的顶表面，并且在所述半导体系统的俯视图中，所述第一导电层的轮廓围绕所述第二导电层的轮廓; 在半导体系统的第一导电层上的第一电连接器; 第二电连接器，包括形成在半导体系统的第二导电层上的形状; 以及形成在所述第二导电层的顶表面上并且在所述半导体系统的顶视图中在所述第二导电层的轮廓的内侧具有外周的接触层，其中所述接触层包括暴露所述第二导电层的不连续区域 第二导电层的顶表面沿着第二电连接器的形状形成不连续区域。
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公开(公告)号：US20230005984A1
公开(公告)日：2023-01-05
申请号：US17901655
申请日：2022-09-01
申请人： EPISTAR CORPORATION
发明人： Po-Shun CHIU , Tsung-Hsun CHIANG , Liang-Sheng CHI , Jing JIANG , Jie CHEN , Tzung- Shiun YEH , Hsin-Ying WANG , Hui-Chun YEH , Chien-Fu SHEN
摘要： A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.
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公开(公告)号：US20180108807A1
公开(公告)日：2018-04-19
申请号：US15846773
申请日：2017-12-19
申请人： EPISTAR CORPORATION
发明人： Chao-Hsing CHEN , Yu-Chen YANG , Li-Ping JOU , Hui-Chun YEH , Yi-Wen KU
CPC分类号： H01L33/38 , H01L33/0012 , H01L33/08 , H01L33/20 , H01L33/30 , H01L33/382 , H01L33/44 , H01L33/46 , H01L33/60 , H01L33/62
摘要： A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of beveled trenches formed in the semiconductor layer sequence; a plurality of protruding structures respectively formed in the plurality of beveled trenches; a dielectric layer formed on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches; a reflecting layer interposed between the semiconductor layer sequence and the dielectric layer; and a metal layer formed along the inner sidewall of the plurality of beveled trenches, wherein the dielectric layer, the reflecting layer and the metal layer are overlapping, the plurality of protruding structures and the reflecting layer are not overlapping.
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公开(公告)号：US20170047494A1
公开(公告)日：2017-02-16
申请号：US14825787
申请日：2015-08-13
申请人： EPISTAR CORPORATION
发明人： Hui-Chun YEH , Chien-Fu SHEN , Tsun-Kai KO
CPC分类号： H01L27/156 , H01L33/145 , H01L33/38
摘要： A light-emitting device, including a substrate; a plurality of light-emitting units formed on the substrate, wherein the plurality of light-emitting units include a first light-emitting unit; a second light-emitting unit; and a group of light-emitting units formed between the first light-emitting unit and the second light-emitting unit, wherein each of the plurality of light-emitting unit includes a first-type semiconductor layer, a second-type semiconductor layer and an active layer formed between the first-type semiconductor layer and the second-type semiconductor layer; a plurality of electrical connections formed on the plurality of light-emitting units, electrically connecting each two of the light-emitting units adjacent; a first pad formed on the first light-emitting unit; a second pad and a third pad formed on the second light-emitting unit; wherein one of the plurality of electrical connection connects and extends from the second pad.
摘要翻译： 1.一种发光装置，包括基板; 形成在所述基板上的多个发光单元，其中所述多个发光单元包括第一发光单元; 第二发光单元; 以及形成在所述第一发光单元和所述第二发光单元之间的一组发光单元，其中所述多个发光单元中的每一个包括第一类型半导体层，第二类型半导体层和 形成在第一型半导体层和第二类型半导体层之间的有源层; 形成在所述多个发光单元上的多个电连接，将每个所述发光单元相邻地电连接; 形成在第一发光单元上的第一焊盘; 第二焊盘和第三焊盘，形成在所述第二发光单元上; 其中所述多个电连接中的一个连接并从所述第二焊盘延伸。
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公开(公告)号：US20150236208A1
公开(公告)日：2015-08-20
申请号：US14705453
申请日：2015-05-06
申请人： EPISTAR CORPORATION
发明人： Chao-Hsing CHEN , Yu-Chen YANG , Li-Ping JOU , Hui-Chun YEH , Yi-Wen KU
CPC分类号： H01L33/08 , H01L33/0012 , H01L33/20 , H01L33/30 , H01L33/38 , H01L33/382 , H01L33/44 , H01L33/46 , H01L33/60 , H01L33/62
摘要： A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of protruding structures; a plurality of beveled trenches in the semiconductor layer sequence and respectively accommodating the plurality of protruding structures; a dielectric layer on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches, wherein the dielectric layer comprises a surface perpendicular to a thickness direction of the semiconductor layer sequence; a metal layer formed along the inner sidewall of the plurality of beveled trenches and extending to the surface of the dielectric layer, wherein the metal layer is insulated from the second semiconductor layer by the dielectric layer; and a first electrode formed on the plurality of protruding structures.
摘要翻译： 发光装置包括半导体层序列，其包括具有第一导电性的第一半导体层，具有第二导电性的第二半导体层和介于第一半导体层和第二半导体层之间的有源层; 多个突出结构; 半导体层中的多个倾斜沟槽序列并分别容纳多个突起结构; 所述第二半导体层上的电介质层和所述多个倾斜沟槽的内侧壁，其中所述电介质层包括垂直于所述半导体层序列的厚度方向的表面; 沿着所述多个倾斜沟槽的内侧壁形成并延伸到所述电介质层的表面的金属层，其中所述金属层通过所述电介质层与所述第二半导体层绝缘; 以及形成在所述多个突出结构上的第一电极。
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公开(公告)号：US20240113262A1
公开(公告)日：2024-04-04
申请号：US18241471
申请日：2023-09-01
申请人： EPISTAR CORPORATION
发明人： Hsin-Ying WANG , Hui-Chun YEH , Jhih-Yong YANG , Chen OU , Cheng-Lin LU
IPC分类号： H01L33/38 , H01L25/075 , H01L33/14 , H01L33/62
CPC分类号： H01L33/382 , H01L25/0753 , H01L33/145 , H01L33/62
摘要： A light-emitting device includes: a semiconductor stack, including a first semiconductor layer, an active region and a second semiconductor layer; a first contact electrode and a second contact electrode formed on the semiconductor stack, wherein the first contact electrode includes a first contact part formed on the first semiconductor layer and the second contact electrode includes a second contact part formed on the second semiconductor layer; an insulating stack formed on the semiconductor stack, including an opening on the second contact part; a first electrode pad and a second electrode pad formed on the insulating stack, wherein the second electrode pad filled in the opening and connecting the second contact part; wherein the second electrode pad includes an upper surface, and the upper surface includes a platform area and a depression area on the second contact part; wherein the platform area has a maximum height relative to other areas of the upper surface; wherein an area of a projection of the platform area on a horizontal plane is A1, and a sum of areas of the projections of the platform area and the depression area on the horizontal plane is A2, and a ratio of A1/A2 ranges from 50%-80%.
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公开(公告)号：US20220367563A1
公开(公告)日：2022-11-17
申请号：US17877550
申请日：2022-07-29
申请人： EPISTAR CORPORATION
发明人： Cheng-Yu CHEN , Hui-Chun YEH , Chien-Fu SHEN
摘要： A method for manufacturing a light-emitting device, includes: forming a semiconductor stack on a substrate, wherein the semiconductor stack includes a first semiconductor layer, a second semiconductor layer and an active region formed therebetween; removing portions of the semiconductor stack to form a plurality of mesas and exposing a part of the first semiconductor layer, wherein the part of the first semiconductor layer includes a first portion and a second portion; forming a plurality of trenches by removing the first portion of the part of the first semiconductor to exposing a top surface of the substrate and a side wall of the first semiconductor, wherein the plurality of trenches defining a plurality of light-emitting units in the semiconductor stack; wherein in a top view, the plurality of trenches includes a first trench extending along a first direction and a second trench extending along a second direction not parallel with the first trench; and wherein the second trench includes an end; forming connection electrodes on the semiconductor stack to electrically connect the adjacent light-emitting units; and separating the substrate and the second portion of the part of the first semiconductor layer along a first dicing line not parallel with the second direction; wherein the first dicing line intersects the end of the second trench.
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