公开(公告)号：US11705545B2

公开(公告)日：2023-07-18

申请号：US17306141

申请日：2021-05-03

申请人： EPISTAR CORPORATION

发明人： Hsin-Ying Wang ,  Chih-Hao Chen ,  Chien-Chih Liao ,  Chao-Hsing Chen ,  Wu-Tsung Lo ,  Tsun-Kai Ko ,  Chen Ou

IPC分类号： H01L33/60 ,  H01L33/46 ,  H01L33/54 ,  H01L33/56 ,  H01L33/22 ,  H01L33/44 ,  H01L33/08 ,  H01L33/14 ,  H01L33/38 ,  H01L33/00

CPC分类号： H01L33/60 ,  H01L33/38 ,  H01L33/46 ,  H01L33/54 ,  H01L33/56

摘要： A light-emitting device comprises a substrate comprising a sidewall, a first top surface, and a second top surface, wherein the second top surface is closer to the sidewall of the substrate than the first top surface to the sidewall of the substrate; a semiconductor stack formed on the substrate comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a dicing street surrounding the semiconductor stack, and exposing the first top surface and the second top surface of the substrate; a protective layer covering the semiconductor stack; a reflective layer comprising a Distributed Bragg Reflector structure covering the protective layer; and a cap layer covering the reflective layer, wherein the second top surface of the substrate is not covered by the protective layer, the reflective layer, and the cap layer.

公开(公告)号：US09412906B2

公开(公告)日：2016-08-09

申请号：US14185586

申请日：2014-02-20

申请人： Epistar Corporation

发明人： Chien-Kai Chung ,  Po-Shun Chiu ,  Hsin-Ying Wang ,  De-Shan Kuo ,  Tsun-Kai Ko ,  Yu-Ting Huang

IPC分类号： H01L33/00 ,  H01L33/38 ,  H01L33/20

CPC分类号： H01L33/22 ,  H01L33/145 ,  H01L33/20 ,  H01L33/38 ,  H01L33/382

摘要： A light-emitting device comprises: a light-emitting stack comprising a first side, a second side opposite to the first side, and an upper surface between the first side and the second side; a first electrode pad formed on the upper surface; a second electrode pad formed on the upper surface, and the first electrode pad is closer to the first side than the second electrode pad; and a first extension electrode comprising a first section extended from the first electrode pad toward the second electrode pad, and a second section extended from the first electrode pad toward the first side.

摘要翻译： 发光装置包括：发光堆叠，包括第一侧，与第一侧相对的第二侧和在第一侧和第二侧之间的上表面; 形成在上表面上的第一电极焊盘; 形成在所述上表面上的第二电极焊盘，并且所述第一电极焊盘比所述第二电极焊盘更靠近所述第一侧; 以及第一延伸电极，包括从第一电极焊盘朝向第二电极焊盘延伸的第一部分，以及从第一电极焊盘朝向第一侧延伸的第二部分。

公开(公告)号：US11757077B2

公开(公告)日：2023-09-12

申请号：US17306136

申请日：2021-05-03

申请人： EPISTAR CORPORATION

发明人： Hsin-Ying Wang ,  Chih-Hao Chen ,  Chien-Chih Liao ,  Chao-Hsing Chen ,  Wu-Tsung Lo ,  Tsun-Kai Ko ,  Chen Ou

IPC分类号： H01L33/60 ,  H01L33/56 ,  H01L33/54 ,  H01L33/46 ,  H01L33/38 ,  H01L21/78

CPC分类号： H01L33/60 ,  H01L21/78 ,  H01L33/38 ,  H01L33/46 ,  H01L33/54 ,  H01L33/56

摘要： A light-emitting device comprises a substrate comprising a top surface and a sidewall; a semiconductor stack formed on the top surface of the substrate comprising a first semiconductor layer, an active layer and a second semiconductor layer; a dicing street surrounding the semiconductor stack and exposing the top surface of the substrate; a protective layer covering the semiconductor stack and the dicing street; a reflective layer comprising a Distributed Bragg Reflector structure and covering the protective layer; and a cap layer covering the reflective layer, wherein the reflective layer comprises an uneven portion adjacent to the sidewall of the substrate, and the uneven portion comprises an uneven thickness.

公开(公告)号：US10950652B2

公开(公告)日：2021-03-16

申请号：US16037862

申请日：2018-07-17

申请人： EPISTAR CORPORATION

发明人： Chien-Fu Shen ,  Chao-Hsing Chen ,  Tsun-Kai Ko ,  Schang-Jing Hon ,  Sheng-Jie Hsu ,  De-Shan Kuo ,  Hsin-Ying Wang ,  Chiu-Lin Yao ,  Chien-Fu Huang ,  Hsin-Mao Liu ,  Chien-Kai Chung

IPC分类号： H01L27/15 ,  H01L25/075 ,  H01L33/20 ,  H01L33/62 ,  H01L33/38 ,  H01L33/44

摘要： Disclosed herein is a light-emitting device. The light-emitting device includes a substrate with a top surface; a first light-emitting structure unit and a second structure light-emitting unit disposed on the top surface, the first light-emitting structure unit and the second light-emitting structure unit being spaced apart from each other, wherein each of the first light-emitting structure unit and the second light-emitting structure unit includes a lower layer having a first conductivity and an upper layer having a second conductivity; a trench between the first light-emitting structure unit and the second light-emitting structure unit, including a bottom portion which is a part of the top surface; an isolation layer, disposed on the trench and covering the bottom portion; and an electrical connection, electrically connecting the first light-emitting structure unit and the second light-emitting structure unit; wherein the lower layer includes an inclined sidewall and the electrical connection contacts the inclined sidewall.

公开(公告)号：USD743355S1

公开(公告)日：2015-11-17

申请号：US29497212

申请日：2014-07-22

申请人： EPISTAR CORPORATION

设计人： Hsin-Ying Wang ,  Chien-Kai Chung ,  Yu-Ting Huang ,  Tsun-Kai Ko

公开(公告)号：US20150236205A1

公开(公告)日：2015-08-20

申请号：US14185586

申请日：2014-02-20

申请人： Epistar Corporation

发明人： Chien-Kai CHUNG ,  Po-Shun CHIU ,  Hsin-Ying Wang ,  De-Shan KUO ,  Tsun-Kai Ko ,  Yu-Ting Huang

IPC分类号： H01L33/38 ,  H01L33/22

CPC分类号： H01L33/22 ,  H01L33/145 ,  H01L33/20 ,  H01L33/38 ,  H01L33/382

摘要： A light-emitting device comprises: a light-emitting stack comprising a first side, a second side opposite to the first side, and an upper surface between the first side and the second side; a first electrode pad formed on the upper surface; a second electrode pad formed on the upper surface, and the first electrode pad is closer to the first side than the second electrode pad; and a first extension electrode comprising a first section extended from the first electrode pad toward the second electrode pad, and a second section extended from the first electrode pad toward the first side.

摘要翻译： 发光装置包括：发光堆叠，包括第一侧，与第一侧相对的第二侧和在第一侧和第二侧之间的上表面; 形成在上表面上的第一电极焊盘; 形成在所述上表面上的第二电极焊盘，并且所述第一电极焊盘比所述第二电极焊盘更靠近所述第一侧; 以及第一延伸电极，包括从第一电极焊盘朝向第二电极焊盘延伸的第一部分，以及从第一电极焊盘朝向第一侧延伸的第二部分。

公开(公告)号：US11990575B2

公开(公告)日：2024-05-21

申请号：US18205920

申请日：2023-06-05

申请人： EPISTAR CORPORATION

发明人： Hsin-Ying Wang ,  Chih-Hao Chen ,  Chien-Chih Liao ,  Chao-Hsing Chen ,  Wu-Tsung Lo ,  Tsun-Kai Ko ,  Chen Ou

IPC分类号： H01L33/60 ,  H01L21/78 ,  H01L33/08 ,  H01L33/14 ,  H01L33/38 ,  H01L33/44 ,  H01L33/46 ,  H01L33/54 ,  H01L33/56 ,  H01L33/00 ,  H01L33/22

CPC分类号： H01L33/60 ,  H01L21/78 ,  H01L33/38 ,  H01L33/46 ,  H01L33/54 ,  H01L33/56

摘要： A light-emitting device comprises a substrate comprising a sidewall, a first top surface, and a second top surface, wherein the second top surface is closer to the sidewall of the substrate than the first top surface to the sidewall of the substrate; a semiconductor stack formed on the substrate comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a dicing street surrounding the semiconductor stack, and exposing the first top surface and the second top surface of the substrate; a protective layer covering the semiconductor stack; a reflective layer comprising a Distributed Bragg Reflector structure covering the protective layer; and a cap layer covering the reflective layer, wherein the second top surface of the substrate is not covered by the protective layer, the reflective layer, and the cap layer.

公开(公告)号：US11437427B2

公开(公告)日：2022-09-06

申请号：US16750227

申请日：2020-01-23

申请人： EPISTAR CORPORATION

发明人： Po-Shun Chiu ,  Tsung-Hsun Chiang ,  Liang-Sheng Chi ,  Jing Jiang ,  Jie Chen ,  Tzung-Shiun Yeh ,  Hsin-Ying Wang ,  Hui-Chun Yeh ,  Chien-Fu Shen

IPC分类号： H01L27/15 ,  H01L33/36 ,  F21K9/00 ,  H01L33/62

摘要： A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.

公开(公告)号：US10784427B2

公开(公告)日：2020-09-22

申请号：US16579218

申请日：2019-09-23

申请人： EPISTAR CORPORATION

发明人： Li-Ming Chang ,  Tzung-Shiun Yeh ,  Chien-Fu Shen ,  Yu-Rui Lin ,  Chen Ou ,  Hsin-Ying Wang ,  Hui-Chun Yeh

IPC分类号： H01L33/62 ,  H01L33/20 ,  H01L33/06 ,  H01L33/30 ,  F21Y115/10 ,  H01L33/22 ,  H01L23/60 ,  F21K9/232 ,  H01L33/32 ,  H01L33/00 ,  H01L33/38 ,  H01L33/14

摘要： A light-emitting device includes a first edge to a fourth edge; a semiconductor stack formed on a substrate, including a first semiconductor layer, a second semiconductor layer and an active layer; a first electrode formed on the first semiconductor layer, including a first pad electrode and a first finger electrode; and a second electrode formed on the second semiconductor layer, including a second pad electrode and a second finger electrode; wherein the first finger electrode is disposed at and along the first edge; and the first finger electrode includes a first overlapping portion overlapping the second finger electrode; the second finger electrode includes a second overlapping portion overlapping the first finger electrode and a non-overlapping portion that does not overlap the first finger electrode; and the second overlapping portion is not parallel with the first overlapping portion and the non-overlapping portion is not parallel with the first edge.

公开(公告)号：US09406719B2

公开(公告)日：2016-08-02

申请号：US14924264

申请日：2015-10-27

申请人： EPISTAR CORPORATION

发明人： Chien-Fu Shen ,  Chao-Hsing Chen ,  Tsun-Kai Ko ,  Schang-Jing Hon ,  Sheng-Jie Hsu ,  De-Shan Kuo ,  Hsin-Ying Wang ,  Chiu-Lin Yao ,  Chien-Fu Huang ,  Hsin-Mao Liu ,  Chien-Kai Chung

IPC分类号： H01L33/62 ,  H01L27/15 ,  H01L25/075 ,  H01L33/20 ,  H01L33/38

CPC分类号： H01L27/156 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/20 ,  H01L33/382 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light-emitting structure, comprising a substrate; a first unit and a second unit, separately formed on the substrate; a trench between the first unit and the second unit, comprising a bottom portion exposing the substrate; an insulating layer arranged on the trench, conformably covering the bottom portion and sidewalls of the first unit and the second unit; and an electrical connection, conformably covering the insulating layer, electrically connecting the first unit and the second unit and comprising a bridging portion and a joining portion extending from the bridging portion, wherein the bridging portion is wider than the joining portion and the bridging portion covers the trench, and the joining portion covers the first unit and the second unit.

摘要翻译： 1.一种发光结构，包括基板; 分别形成在所述基板上的第一单元和第二单元; 第一单元和第二单元之间的沟槽，包括露出衬底的底部; 布置在所述沟槽上的绝缘层，其适配地覆盖所述第一单元和所述第二单元的底部和侧壁; 以及电连接，其顺应地覆盖绝缘层，电连接第一单元和第二单元，并且包括桥接部分和从桥接部分延伸的接合部分，其中桥接部分比接合部分宽，桥接部分覆盖 沟槽和接合部分覆盖第一单元和第二单元。