公开(公告)号：US11810943B2

公开(公告)日：2023-11-07

申请号：US17901655

申请日：2022-09-01

申请人： EPISTAR CORPORATION

发明人： Po-Shun Chiu ,  Tsung-Hsun Chiang ,  Liang-Sheng Chi ,  Jing Jiang ,  Jie Chen ,  Tzung-Shiun Yeh ,  Hsin-Ying Wang ,  Hui-Chun Yeh ,  Chien-Fu Shen

IPC分类号： H01L27/15 ,  H01L33/36 ,  F21K9/00 ,  H01L33/62

CPC分类号： H01L27/153 ,  F21K9/00 ,  H01L33/36 ,  H01L33/62

摘要： A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.

公开(公告)号：US10680138B2

公开(公告)日：2020-06-09

申请号：US16384890

申请日：2019-04-15

申请人： EPISTAR CORPORATION

发明人： Chao-Hsing Chen ,  Jia-Kuen Wang ,  Tzu-Yao Tseng ,  Bo-Jiun Hu ,  Tsung-Hsun Chiang ,  Wen-Hung Chuang ,  Kuan-Yi Lee ,  Yu-Ling Lin ,  Chien-Fu Shen ,  Tsun-Kai Ko

IPC分类号： H01L33/46 ,  H01L33/38 ,  H01L33/40

摘要： A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.

公开(公告)号：US11764332B2

公开(公告)日：2023-09-19

申请号：US17712690

申请日：2022-04-04

申请人： EPISTAR CORPORATION

发明人： Chao-Hsing Chen ,  Jia-Kuen Wang ,  Tzu-Yao Tseng ,  Tsung-Hsun Chiang ,  Bo-Jiun Hu ,  Wen-Hung Chuang ,  Yu-Ling Lin

IPC分类号： H01L33/10 ,  H01L33/24 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62 ,  H01L33/22 ,  H01L33/44 ,  H01L33/00 ,  H01L33/46 ,  H01L33/02 ,  H01L33/08 ,  H01L33/40

CPC分类号： H01L33/382 ,  H01L33/00 ,  H01L33/10 ,  H01L33/24 ,  H01L33/385 ,  H01L33/387 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  H01L33/0012 ,  H01L33/02 ,  H01L33/08 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/44 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/48091 ,  H01L2924/00014

摘要： A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes a lateral outer perimeter surface surrounding the active layer; a plurality of vias penetrating the semiconductor stack to expose the first semiconductor layer; a first pad portion and a second pad portion formed on the semiconductor stack to respectively electrically connected to the first semiconductor layer and the second semiconductor layer, wherein the second pad portion and the first pad portion are arranged in a first direction; wherein the plurality of vias is arranged in a plurality of rows, the plurality of rows are arranged in the first direction and includes a first row and a second row, the first row is covered by the second pad portion, the second row is not covered by the first pad portion and the second pad portion, wherein a spacing between two adjacent vias in the first row is different from a spacing between two adjacent vias in the second row.

公开(公告)号：US10749075B2

公开(公告)日：2020-08-18

申请号：US16520076

申请日：2019-07-23

申请人： EPISTAR CORPORATION

发明人： Chao-Hsing Chen ,  Jia-Kuen Wang ,  Tzu-Yao Tseng ,  Tsung-Hsun Chiang ,  Bo-Jiun Hu ,  Wen-Hung Chuang ,  Yu-Ling Lin

IPC分类号： H01L33/38 ,  H01L33/62 ,  H01L33/46 ,  H01L33/08 ,  H01L33/22 ,  H01L33/00 ,  H01L33/44 ,  H01L33/40 ,  H01L33/02

摘要： A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer; a plurality of first trenches penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer; a second trench penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer, wherein the second trench is disposed near an outmost edge of the active layer, and surrounds the active layer and the plurality of first trenches; a patterned metal layer formed on the second semiconductor layer and formed in one of the plurality of first trenches or the second trench; and a first pad portion and a second pad portion both formed on the second semiconductor layer and electrically connecting the second semiconductor layer and the first semiconductor layer respectively.

公开(公告)号：US10297723B2

公开(公告)日：2019-05-21

申请号：US15948738

申请日：2018-04-09

申请人： EPISTAR CORPORATION

发明人： Chao-Hsing Chen ,  Jia-Kuen Wang ,  Tzu-Yao Tseng ,  Bo-Jiun Hu ,  Tsung-Hsun Chiang ,  Wen-Hung Chuang ,  Kuan-Yi Lee ,  Yu-Ling Lin ,  Chien-Fu Shen ,  Tsun-Kai Ko

IPC分类号： H01L33/00 ,  H01L33/46 ,  H01L33/38 ,  H01L33/40

摘要： A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.

公开(公告)号：US11894491B2

公开(公告)日：2024-02-06

申请号：US18118488

申请日：2023-03-07

申请人： EPISTAR CORPORATION

发明人： Chao-Hsing Chen ,  Jia-Kuen Wang ,  Tzu-Yao Tseng ,  Tsung-Hsun Chiang ,  Bo-Jiun Hu ,  Wen-Hung Chuang ,  Yu-Ling Lin

IPC分类号： H01L33/38 ,  H01L33/00 ,  H01L33/10 ,  H01L33/24 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  H01L33/02 ,  H01L33/08 ,  H01L33/22 ,  H01L33/40 ,  H01L33/44

CPC分类号： H01L33/382 ,  H01L33/00 ,  H01L33/10 ,  H01L33/24 ,  H01L33/385 ,  H01L33/387 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  H01L33/0012 ,  H01L33/02 ,  H01L33/08 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/44 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/48091 ,  H01L2924/00014

摘要： A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer and a second semiconductor layer; a first reflective layer formed on the first semiconductor layer and including a plurality of vias; a plurality of contact structures respectively filled in the vias and electrically connected to the first semiconductor layer; a second reflective layer including metal material formed on the first reflective layer and contacting the contact structures; a plurality of conductive vias surrounded by the semiconductor stack; a connecting layer formed in the conductive vias and electrically connected to the second semiconductor layer; a first pad portion electrically connected to the second semiconductor layer; and a second pad portion electrically connected to the first semiconductor layer, wherein a shortest distance between two of the conductive vias is larger than a shortest distance between the first pad portion and the second pad portion.

公开(公告)号：US10985295B2

公开(公告)日：2021-04-20

申请号：US16891670

申请日：2020-06-03

申请人： EPISTAR CORPORATION

发明人： Chao-Hsing Chen ,  Jia-Kuen Wang ,  Tzu-Yao Tseng ,  Bo-Jiun Hu ,  Tsung-Hsun Chiang ,  Wen-Hung Chuang ,  Kuan-Yi Lee ,  Yu-Ling Lin ,  Chien-Fu Shen ,  Tsun-Kai Ko

IPC分类号： H01L33/46 ,  H01L33/38 ,  H01L33/40

摘要： A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first contact layer on the first semiconductor layer; a second contact layer on the second semiconductor layer, wherein the first contact layer and the second contact layer comprise a metal material other than gold (Au) or copper (Cu); a first pad on the semiconductor stack; a second pad on the semiconductor stack.

公开(公告)号：US20190074409A1

公开(公告)日：2019-03-07

申请号：US16182241

申请日：2018-11-06

申请人： EPISTAR CORPORATION

发明人： Chao-Hsing Chen ,  Tsung-Hsun Chiang ,  Chien-Chih Liao ,  Wen-Hung Chuang ,  Min-Yen Tsai ,  Bo-Jiun Hu

IPC分类号： H01L33/44 ,  H01L33/40 ,  H01L33/02 ,  H01L33/62 ,  H01L33/38 ,  H01L23/00

摘要： A light-emitting element includes a semiconductor light-emitting stack including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed therebetween; a first conductive layer disposed on the second semiconductor layer and electrically connecting the second semiconductor layer; a second conductive layer disposed on the second semiconductor layer and electrically connecting the first semiconductor layer; and a cushion part disposed on and directly contacts the first conductive layer, wherein in a top view, the cushion part is surrounded by and electrically isolated from the second conductive layer.

公开(公告)号：US10153402B2

公开(公告)日：2018-12-11

申请号：US15669613

申请日：2017-08-04

申请人： EPISTAR CORPORATION

发明人： Chao-Hsing Chen ,  Tsung-Hsun Chiang ,  Chien-Chih Liao ,  Wen-Hung Chuang ,  Min-Yen Tsai ,  Bo-Jiun Hu

IPC分类号： H01L33/44 ,  H01L23/00 ,  H01L33/40 ,  H01L33/62 ,  H01L33/38 ,  H01L33/02

摘要： A light-emitting element includes a semiconductor light-emitting stack including a first semiconductor layer, an active layer, and a second semiconductor layer; a first conductive layer disposed on the second semiconductor layer and electrically connecting the second semiconductor layer; a second conductive layer disposed on the second semiconductor layer and electrically connecting the first semiconductor layer; and a cushion part disposed on the semiconductor light-emitting stack; wherein in a top view, the cushion part is disposed in a center region of the light-emitting element.

公开(公告)号：US20160005941A1

公开(公告)日：2016-01-07

申请号：US14853511

申请日：2015-09-14

申请人： Epistar Corporation

发明人： Min-Yen Tsai ,  Chao-Hsing Chen ,  Tsung-Hsun Chiang ,  Wen-Hung Chuang ,  Bo-Jiun Hu ,  Tzu-Yao Tseng ,  Jia-Kuen Wang ,  Kuan-Yi Lee ,  Yi-Ming Chen ,  Chun-Yu Lin ,  Tsung-Hsien Yang ,  Tzu-Chieh Hsu ,  Kun-De Lin ,  Yao-Ning Chan ,  Chih-Chiang Lu

IPC分类号： H01L33/62 ,  H01L33/60

CPC分类号： H01L33/382 ,  H01L33/0012 ,  H01L33/22 ,  H01L33/387 ,  H01L33/46 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

摘要： A semiconductor light-emitting device includes a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes a periphery surface surrounding the active layer; a plurality of vias penetrating the semiconductor stack to expose the first semiconductor layer; and a patterned metal layer formed on the plurality of vias and covered the periphery surface of the first semiconductor layer.

摘要翻译： 半导体发光器件包括半导体堆叠，其包括第一半导体层，第二半导体层和在第一半导体层和第二半导体层之间的有源层，其中第一半导体层包括围绕有源层的外围表面; 穿过所述半导体堆叠以暴露所述第一半导体层的多个通孔; 以及形成在所述多个通路上并且覆盖所述第一半导体层的外围表面的图案化金属层。