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公开(公告)号：US11658269B2
公开(公告)日：2023-05-23
申请号：US17206647
申请日：2021-03-19
申请人： EPISTAR CORPORATION
发明人： Chao-Hsing Chen , Jia-Kuen Wang , Tzu-Yao Tseng , Bo-Jiun Hu , Tsung-Hsun Chiang , Wen-Hung Chuang , Kuan-Yi Lee , Yu-Ling Lin , Chien-Fu Shen , Tsun-Kai Ko
CPC分类号： H01L33/46 , H01L33/382 , H01L33/38 , H01L33/405
摘要： A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; one or multiple vias penetrating the active layer and the second semiconductor layer to expose the first semiconductor layer; a first contact layer covering the one or multiple vias; a third insulating layer including a first group of one or multiple third insulating openings on the second semiconductor layer to expose the first contact layer; a first pad on the semiconductor stack and covering the first group of one or multiple third insulating openings; and a second pad on the semiconductor stack and separated from the first pad with a distance, wherein the second pad is formed at a position other than positions of the one or multiple vias in a top view of the light-emitting device.
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公开(公告)号：US10297723B2
公开(公告)日：2019-05-21
申请号：US15948738
申请日：2018-04-09
申请人： EPISTAR CORPORATION
发明人： Chao-Hsing Chen , Jia-Kuen Wang , Tzu-Yao Tseng , Bo-Jiun Hu , Tsung-Hsun Chiang , Wen-Hung Chuang , Kuan-Yi Lee , Yu-Ling Lin , Chien-Fu Shen , Tsun-Kai Ko
摘要： A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.
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公开(公告)号：US10199544B2
公开(公告)日：2019-02-05
申请号：US15858534
申请日：2017-12-29
申请人： EPISTAR CORPORATION
发明人： Chao-Hsing Chen , Jia-Kuen Wang , Tzu-Yao Tseng , Bo-Jiun Hu , Tsung-Hsun Chiang , Wen-Hung Chuang , Kuan-Yi Lee , Yu-Ling Lin , Chien-Fu Shen , Tsun-Kai Ko
摘要： A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.
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公开(公告)号：US09893241B2
公开(公告)日：2018-02-13
申请号：US15350893
申请日：2016-11-14
申请人： EPISTAR CORPORATION
发明人： Chao-Hsing Chen , Jia-Kuen Wang , Tzu-Yao Tseng , Bo-Jiun Hu , Tsung-Hsun Chiang , Wen-Hung Chuang , Kuan-Yi Lee , Yu-Ling Lin , Chien-Fu Shen , Tsun-Kai Ko
CPC分类号： H01L33/46 , H01L33/38 , H01L33/382 , H01L33/405
摘要： A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.
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公开(公告)号：US09461209B2
公开(公告)日：2016-10-04
申请号：US14853511
申请日：2015-09-14
申请人： Epistar Corporation
发明人： Min-Yen Tsai , Chao-Hsing Chen , Tsung-Hsun Chiang , Wen-Hung Chuang , Bo-Jiun Hu , Tzu-Yao Tseng , Jia-Kuen Wang , Kuan-Yi Lee , Yi-Ming Chen , Chun-Yu Lin , Tsung-Hsien Yang , Tzu-Chieh Hsu , Kun-De Lin , Yao-Ning Chan , Chih-Chiang Lu
CPC分类号： H01L33/382 , H01L33/0012 , H01L33/22 , H01L33/387 , H01L33/46 , H01L33/62 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： A semiconductor light-emitting device includes a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes a periphery surface surrounding the active layer; a plurality of vias penetrating the semiconductor stack to expose the first semiconductor layer; and a patterned metal layer formed on the plurality of vias and covered the periphery surface of the first semiconductor layer.
摘要翻译： 半导体发光器件包括半导体堆叠，其包括第一半导体层，第二半导体层和在第一半导体层和第二半导体层之间的有源层，其中第一半导体层包括围绕有源层的外围表面; 穿过所述半导体堆叠以暴露所述第一半导体层的多个通孔; 以及形成在所述多个通路上并且覆盖所述第一半导体层的外围表面的图案化金属层。
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公开(公告)号：US10680138B2
公开(公告)日：2020-06-09
申请号：US16384890
申请日：2019-04-15
申请人： EPISTAR CORPORATION
发明人： Chao-Hsing Chen , Jia-Kuen Wang , Tzu-Yao Tseng , Bo-Jiun Hu , Tsung-Hsun Chiang , Wen-Hung Chuang , Kuan-Yi Lee , Yu-Ling Lin , Chien-Fu Shen , Tsun-Kai Ko
摘要： A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.
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公开(公告)号：US10985295B2
公开(公告)日：2021-04-20
申请号：US16891670
申请日：2020-06-03
申请人： EPISTAR CORPORATION
发明人： Chao-Hsing Chen , Jia-Kuen Wang , Tzu-Yao Tseng , Bo-Jiun Hu , Tsung-Hsun Chiang , Wen-Hung Chuang , Kuan-Yi Lee , Yu-Ling Lin , Chien-Fu Shen , Tsun-Kai Ko
摘要： A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first contact layer on the first semiconductor layer; a second contact layer on the second semiconductor layer, wherein the first contact layer and the second contact layer comprise a metal material other than gold (Au) or copper (Cu); a first pad on the semiconductor stack; a second pad on the semiconductor stack.
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公开(公告)号：US20160005941A1
公开(公告)日：2016-01-07
申请号：US14853511
申请日：2015-09-14
申请人： Epistar Corporation
发明人： Min-Yen Tsai , Chao-Hsing Chen , Tsung-Hsun Chiang , Wen-Hung Chuang , Bo-Jiun Hu , Tzu-Yao Tseng , Jia-Kuen Wang , Kuan-Yi Lee , Yi-Ming Chen , Chun-Yu Lin , Tsung-Hsien Yang , Tzu-Chieh Hsu , Kun-De Lin , Yao-Ning Chan , Chih-Chiang Lu
CPC分类号： H01L33/382 , H01L33/0012 , H01L33/22 , H01L33/387 , H01L33/46 , H01L33/62 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： A semiconductor light-emitting device includes a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes a periphery surface surrounding the active layer; a plurality of vias penetrating the semiconductor stack to expose the first semiconductor layer; and a patterned metal layer formed on the plurality of vias and covered the periphery surface of the first semiconductor layer.
摘要翻译： 半导体发光器件包括半导体堆叠，其包括第一半导体层，第二半导体层和在第一半导体层和第二半导体层之间的有源层，其中第一半导体层包括围绕有源层的外围表面; 穿过所述半导体堆叠以暴露所述第一半导体层的多个通孔; 以及形成在所述多个通路上并且覆盖所述第一半导体层的外围表面的图案化金属层。
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