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    OPTOELECTRONIC DEVICE AND THE MANUFACTURING METHOD THEREOF
    3.
    发明申请
    OPTOELECTRONIC DEVICE AND THE MANUFACTURING METHOD THEREOF 有权
    光电器件及其制造方法

    公开(公告)号：US20160284939A1

    公开(公告)日：2016-09-29

    申请号：US15176890

    申请日：2016-06-08

    申请人： EPISTAR CORPORATION

    发明人： Chun-Yu Lin ,  Yi-Ming Chen ,  Shih-Chang Lee ,  Yao-Ning Chan ,  Tzu-Chieh Hsu

    IPC分类号： H01L33/38 ,  H01L33/22 ,  H01L33/30

    CPC分类号： H01L33/387 ,  H01L33/06 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0025

    摘要： An optoelectronic device is provided. The optoelectronic device comprises: an optoelectronic system for emitting light; multiple contact regions on the optoelectronic system and separated from one another; and multiple fingers on the optoelectronic system and opposite to the multiple contact regions; wherein a first contact region in the multiple contact regions is between two adjacent fingers, and a first distance between the first contact region and one of the adjacent fingers is between 5% and 50% of a second distance between the two adjacent fingers.

    摘要翻译： 提供了一种光电器件。 光电子器件包括：用于发光的光电子系统; 光电子系统上的多个接触区域并且彼此分离; 和多个手指在光电子系统上并且与多个接触区域相对; 其中所述多个接触区域中的第一接触区域位于两个相邻的指状物之间，并且所述第一接触区域和所述相邻指状物之一之间的第一距离在所述两个相邻指状物之间的第二距离的5％至50％之间。

    Light-emitting diode device
    4.
    外观设计
    Light-emitting diode device 有权

    公开(公告)号：USD1008198S1

    公开(公告)日：2023-12-19

    申请号：US29822281

    申请日：2022-01-07

    申请人： EPISTAR CORPORATION

    设计人： Yao-Ning Chan ,  Tzu-Yun Feng ,  Yun-Ya Chang

    摘要： FIG. 1 is a perspective view of a light-emitting diode device showing our new design;
    FIG. 2 is a front elevational view thereof;
    FIG. 3 is a rear elevational view thereof;
    FIG. 4 is a left side elevational view thereof;
    FIG. 5 is a right side elevational view thereof;
    FIG. 6 is a top plan view thereof; and,
    FIG. 7 is a bottom plan view thereof.
    The broken line showing is for the purpose of illustrating environmental structure only and forms no part of the claimed design.

    Semiconductor light-emitting device
    6.
    发明授权
    Semiconductor light-emitting device 有权
    半导体发光装置

    公开(公告)号：US09337394B2

    公开(公告)日：2016-05-10

    申请号：US14554488

    申请日：2014-11-26

    申请人： Epistar Corporation

    发明人： Yi-Ming Chen ,  Chun-Yu Lin ,  Tsung-Hsien Yang ,  Tzu-Chieh Hsu ,  Kun-De Lin ,  Yao-Ning Chan ,  Chih-Chiang Lu

    IPC分类号： H01L33/38 ,  H01L33/22 ,  H01L33/46

    CPC分类号： H01L33/382 ,  H01L33/08 ,  H01L33/22 ,  H01L33/46

    摘要： A semiconductor light-emitting device comprises a semiconductor stack comprising a side, a first surface and a second surface opposite to the first surface, wherein the semiconductor stack further comprises a conductive via extending from the first surface to the second surface; a transparent conductive layer formed on the second surface; a first pad portion and a second pad portion formed on the first surface and electrically connected to the semiconductor stack; and an insulating layer formed between the first pad portion and the semiconductor stack and between the second pad portion and the semiconductor stack.

    摘要翻译： 半导体发光器件包括半导体叠层，其包括侧面，第一表面和与第一表面相对的第二表面，其中半导体堆叠还包括从第一表面延伸到第二表面的导电通孔; 形成在所述第二表面上的透明导电层; 第一焊盘部分和第二焊盘部分，形成在第一表面上并电连接到半导体堆叠; 以及形成在第一焊盘部分和半导体堆叠之间以及在第二焊盘部分和半导体堆叠之间的绝缘层。

    Semiconductor device
    10.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US10461223B2

    公开(公告)日：2019-10-29

    申请号：US16128604

    申请日：2018-09-12

    申请人： EPISTAR CORPORATION

    发明人： Yung-Fu Chang ,  Hsin-Chan Chung ,  Hung-Ta Cheng ,  Wen-Luh Liao ,  Shih-Chang Lee ,  Chih-Chiang Lu ,  Yi-Ming Chen ,  Yao-Ning Chan ,  Chun-Fu Tsai

    IPC分类号： H01L33/38 ,  H01L33/30

    摘要： A semiconductor device includes a semiconductor stack comprising a surface, and an electrode structure comprises an electrode pad formed on the surface, and the electrode structure further comprises a first extending electrode, a second extending electrode and a third extending electrode connecting to the electrode pad. The first extending electrode is closer to a periphery of the surface than the third extending electrode is, and the second extending electrode is between the first extending electrode and the third extending electrode. From a top view of the semiconductor device, the first extending electrode, the second extending electrode and the third extending electrode respectively include a first curve having a first angle θ1, a second curve having a second angle θ2 and a third curve having a third angle θ3, wherein θ3>θ2>θ1 .