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    Light-emitting device
    1.
    发明授权
    Light-emitting device 有权

    公开(公告)号：US11088298B2

    公开(公告)日：2021-08-10

    申请号：US16883742

    申请日：2020-05-26

    申请人： EPISTAR CORPORATION

    发明人： Chien-Fu Huang ,  Chih-Chiang Lu ,  Chun-Yu Lin ,  Hsin-Chih Chiu

    IPC分类号： H01L33/02 ,  H01L25/075 ,  H01L21/66 ,  H01L33/62 ,  H01L23/00 ,  H01L33/36

    摘要： The present disclosure provides a light-emitting device comprising a substrate with a topmost surface; a first semiconductor stack arranged on the substrate, and comprising a first top surface separated from the topmost surface by a first distance; a first bonding layer arranged between the substrate and the first semiconductor stack; a second semiconductor stack arranged on the substrate, and comprising a second top surface separated from the topmost surface by a second distance which is different form the first distance; a second bonding layer arranged between the substrate and the second semiconductor stack; a third semiconductor stack arranged on the substrate, and comprising third top surface separated from the topmost surface by a third distance; and a third bonding layer arranged between the substrate and the third semiconductor stack; wherein the first semiconductor stack, the second semiconductor stack, and the third semiconductor stack are configured to emit different color lights.

    Semiconductor device
    3.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US10461223B2

    公开(公告)日：2019-10-29

    申请号：US16128604

    申请日：2018-09-12

    申请人： EPISTAR CORPORATION

    发明人： Yung-Fu Chang ,  Hsin-Chan Chung ,  Hung-Ta Cheng ,  Wen-Luh Liao ,  Shih-Chang Lee ,  Chih-Chiang Lu ,  Yi-Ming Chen ,  Yao-Ning Chan ,  Chun-Fu Tsai

    IPC分类号： H01L33/38 ,  H01L33/30

    摘要： A semiconductor device includes a semiconductor stack comprising a surface, and an electrode structure comprises an electrode pad formed on the surface, and the electrode structure further comprises a first extending electrode, a second extending electrode and a third extending electrode connecting to the electrode pad. The first extending electrode is closer to a periphery of the surface than the third extending electrode is, and the second extending electrode is between the first extending electrode and the third extending electrode. From a top view of the semiconductor device, the first extending electrode, the second extending electrode and the third extending electrode respectively include a first curve having a first angle θ1, a second curve having a second angle θ2 and a third curve having a third angle θ3, wherein θ3>θ2>θ1 .

    Light emitting device
    6.
    发明授权
    Light emitting device 有权

    公开(公告)号：US09831384B2

    公开(公告)日：2017-11-28

    申请号：US14261368

    申请日：2014-04-24

    申请人： EPISTAR CORPORATION

    发明人： Yi-Ming Chen ,  Hao-Min Ku ,  Chih-Chiang Lu ,  Tzu-Chieh Hsu

    IPC分类号： H01L33/10 ,  H01L33/26 ,  H01L33/40 ,  H01L33/38

    CPC分类号： H01L33/10 ,  H01L33/38 ,  H01L33/405

    摘要： This disclosure discloses a light-emitting device. The light-emitting device comprise a light-emitting stack having a first-type semiconductor layer, a second-type semiconductor layer, and an active formed between the first-type semiconductor layer and the second-type semiconductor layer and emitting a light; and a reflective structure formed on the first-type semiconductor layer and having a first interface and a second interface; wherein the critical angle of the light at the first interface is larger than that at the second interface; and wherein the reflective structure ohmically contacts the first-type semiconductor layer at the first interface.