Light-emitting device
    1.
    发明授权

    公开(公告)号:US12095012B2

    公开(公告)日:2024-09-17

    申请号:US17377784

    申请日:2021-07-16

    IPC分类号: H01L33/00 H01L33/50 H01L33/54

    摘要: A light-emitting device includes a semiconductor stack, a first electrode, a second electrode, and a supporting layer. The semiconductor stack includes a first semiconductor layer including a first top surface and a bottom surface, an active layer located on the first semiconductor layer, and a second semiconductor layer located on the active layer and including a second top surface. The first electrode is located on the first top surface. The second electrode is located on the second top surface. The supporting layer includes a first thickness, and directly covers at least 80% of the bottom surface. In a top view, the semiconductor stack includes a maximum length, and a ratio of the maximum length to the first thickness is smaller than 1. The supporting layer has a first thermal expansion coefficient smaller than 80 ppm/° C., and the supporting layer has a Young's modulus between 2˜10 GPa.

    Light-emitting device and manufacturing method thereof

    公开(公告)号:US10923641B2

    公开(公告)日:2021-02-16

    申请号:US16411145

    申请日:2019-05-14

    发明人: Min-Hsun Hsieh

    IPC分类号: H01L33/62

    摘要: This disclosure discloses a method of manufacturing a light-emitting device includes steps of providing a first substrate with a plurality of first light-emitting elements and adhesive units arranged thereon, providing a second substrate with a first group of second light-emitting elements and a second group of second light-emitting elements arranged thereon, and connecting the a second group of second light-emitting elements and the adhesive units. The first light-emitting elements and the first group of second light-emitting elements are partially or wholly overlapped with each other during connecting the second group of second light-emitting elements and the adhesive units.

    Light-emitting device having package structure with quantum dot material and manufacturing method thereof

    公开(公告)号:US10833233B2

    公开(公告)日:2020-11-10

    申请号:US16280465

    申请日:2019-02-20

    IPC分类号: H01L33/60 H01L33/50 H01L33/62

    摘要: A light-emitting device includes a light-emitting unit, a light-transmitting layer, a wavelength conversion structure, and a reflective layer. The light-emitting unit includes a top surface and a first side surface. The light-transmitting layer covers the top surface and the first side surface of the light-emitting unit. The wavelength conversion structure is located on the light-transmitting layer. The wavelength conversion structure includes a wavelength conversion layer, a first barrier layer located on the wavelength conversion layer, a second barrier layer located under the wavelength conversion layer, and a third barrier layer covering side surfaces of the wavelength conversion layer, the first barrier layer, and the second barrier layer. The reflective layer surrounds the light-transmitting layer and the wavelength conversion structure.