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    Method and structure for die bonding using energy beam
    2.
    发明授权
    Method and structure for die bonding using energy beam 有权

    公开(公告)号：US11588084B2

    公开(公告)日：2023-02-21

    申请号：US16748860

    申请日：2020-01-22

    申请人： EPISTAR CORPORATION

    发明人： Min-Hsun Hsieh ,  Shih-An Liao ,  Ying-Yang Su ,  Hsin-Mao Liu ,  Tzu-Hsiang Wang ,  Chi-Chih Pu

    IPC分类号： H01L33/62 ,  H01L33/60 ,  H01L25/075 ,  H05K3/34 ,  G02F1/1368 ,  H01L27/32

    摘要： Disclosed is a die-bonding method which provides a target substrate having a circuit structure with multiple electrical contacts and multiple semiconductor elements each semiconductor element having a pair of electrodes, arranges the multiple semiconductor elements on the target substrate with the pair of electrodes of each semiconductor element aligned with two corresponding electrical contacts of the target substrate, and applies at least one energy beam to join and electrically connect the at least one pair of electrodes of every at least one of the multiple semiconductor elements and the corresponding electrical contacts aligned therewith in a heating cycle by heat carried by the at least one energy beam in the heating cycle. The die-bonding method delivers scattering heated dots over the target substrate to avoid warpage of PCB and ensures high bonding strength between the semiconductor elements and the circuit structure of the target substrate.

    Method and structure for die bonding using energy beam
    4.
    发明授权
    Method and structure for die bonding using energy beam 有权

    公开(公告)号：US11362060B2

    公开(公告)日：2022-06-14

    申请号：US16551764

    申请日：2019-08-27

    申请人： EPISTAR CORPORATION

    发明人： Min-Hsun Hsieh ,  Shih-An Liao ,  Ying-Yang Su ,  Hsin-Mao Liu ,  Tzu-Hsiang Wang ,  Chi-Chih Pu

    IPC分类号： H01L23/00 ,  H01L25/16 ,  H01L25/075 ,  H01L23/498 ,  B23K26/22 ,  B23K101/40

    摘要： Disclosed is a die-bonding method which provides a target substrate having a circuit structure with multiple electrical contacts and multiple semiconductor elements each semiconductor element having a pair of electrodes, arranges the multiple semiconductor elements on the target substrate with the pair of electrodes of each semiconductor element aligned with two corresponding electrical contacts of the target substrate, and applies at least one energy beam to join and electrically connect the at least one pair of electrodes of every at least one of the multiple semiconductor elements and the corresponding electrical contacts aligned therewith in a heating cycle by heat carried by the at least one energy beam in the heating cycle. The die-bonding method delivers scattering heated dots over the target substrate to avoid warpage of PCB and ensures high bonding strength between the semiconductor elements and the circuit structure of the target substrate.

    Light-emitting device
    5.
    发明授权
    Light-emitting device 有权

    公开(公告)号：US11530804B2

    公开(公告)日：2022-12-20

    申请号：US17153050

    申请日：2021-01-20

    申请人： EPISTAR CORPORATION

    发明人： Min-Hsun Hsieh ,  Ying-Yang Su ,  Shih-An Liao ,  Hsin-Mao Liu ,  Tzu-Hsiang Wang ,  Chi-Chih Pu

    IPC分类号： F21V23/00 ,  H01L25/075 ,  H01L33/62 ,  H01L25/16 ,  F21Y115/10

    摘要： A light-emitting device includes a first light-emitting module, a second light-emitting module, a conductive layer and an insulation layer. The first light-emitting module includes a first substrate having a first cavity, a first sidewall, and a light-emitting component disposed on the first substrate. The second module includes a second substrate having a second cavity corresponding to the first cavity and a second sidewall corresponding to the first sidewall. The conductive layer is directly connected to the first cavity and the second cavity and electrically connect the first light-emitting module and the second light-emitting module. The insulation layer is directly connected to the first sidewall and the second sidewall.

    Light-emitting device, manufacturing method thereof and display module using the same
    6.
    发明授权
    Light-emitting device, manufacturing method thereof and display module using the same 有权

    公开(公告)号：US11024782B2

    公开(公告)日：2021-06-01

    申请号：US16866278

    申请日：2020-05-04

    申请人： EPISTAR CORPORATION

    发明人： Min-Hsun Hsieh ,  Hsin-Mao Liu ,  Ying-Yang Su

    IPC分类号： H01L33/58 ,  H01L25/075 ,  H01L23/00 ,  H01L33/50 ,  H01L27/15 ,  H01L33/60

    摘要： A light-emitting device includes a light-emitting element having a first-type semiconductor layer, a second-type semiconductor layer, an active stack between the first-type semiconductor layer and the second-type semiconductor layer, a bottom surface, and a top surface. A first electrode is disposed on the bottom surface and electrically connected to the first-type semiconductor layer. A second electrode is disposed on the bottom surface and electrically connected to the second-type semiconductor layer. A supporting structure is disposed on the top surface. The supporting structure has a thickness and a maximum width. A ratio of the maximum width to the thickness is of 2˜150.