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    SEMICONDUCTOR DEVICE AND SEMICONDUCTOR COMPONENT
    4.
    发明申请
    SEMICONDUCTOR DEVICE AND SEMICONDUCTOR COMPONENT 有权

    公开(公告)号：US20220059727A1

    公开(公告)日：2022-02-24

    申请号：US17406521

    申请日：2021-08-19

    申请人： EPISTAR CORPORATION

    发明人： Hao-Chun Liang ,  Wei-Shan Yeoh ,  Yao-Ning Chan ,  Yi-Ming Chen ,  Shih-Chang Lee

    IPC分类号： H01L33/44 ,  H01L33/46 ,  H01L33/20 ,  H01L31/0216 ,  H01L31/0352 ,  H01L33/62 ,  H01L31/02

    摘要： The present disclosure provides a semiconductor device and a semiconductor component. The semiconductor device includes an active structure, a ring-shaped semiconductor contact layer, a first electrode, and an insulating layer. The active structure has a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer located between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer. The ring-shaped semiconductor contact layer is located on the second-conductivity-type semiconductor layer and having a first inner sidewall and a first outer sidewall. The first electrode has an upper surface and covers the ring-shaped semiconductor contact layer. The insulating layer covers the first electrode and the active structure and has a second inner sidewall and a second outer sidewall. The first inner sidewall is not flush with the second inner sidewall in a vertical direction.