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公开(公告)号：US10991854B2
公开(公告)日：2021-04-27
申请号：US16182241
申请日：2018-11-06
申请人： EPISTAR CORPORATION
发明人： Chao-Hsing Chen , Tsung-Hsun Chiang , Chien-Chih Liao , Wen-Hung Chuang , Min-Yen Tsai , Bo-Jiun Hu
摘要： A light-emitting element includes a semiconductor light-emitting stack including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed therebetween; a first conductive layer disposed on the second semiconductor layer and electrically connecting the second semiconductor layer; a second conductive layer disposed on the second semiconductor layer and electrically connecting the first semiconductor layer; and a cushion part disposed on and directly contacts the first conductive layer, wherein in a top view, the cushion part is surrounded by and electrically isolated from the second conductive layer.
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公开(公告)号：US09966498B2
公开(公告)日：2018-05-08
申请号：US15149837
申请日：2016-05-09
申请人： EPISTAR CORPORATION
发明人： Min-Yen Tsai , De-Shan Kuo
CPC分类号： H01L33/0079 , H01L33/20 , H01L33/46 , H01L2933/0033 , H01L2933/0058
摘要： A method for manufacturing a light-emitting element, including steps of: providing a wafer-level element including a wafer and a light-emitting stack on the wafer, wherein the wafer including an upper surface and a bottom surface, and light-emitting stack is formed on the upper surface of the wafer; forming a light-emitting stack on the upper surface of the wafer; cutting the wafer from one of the bottom surface or the top surface of the wafer by a water-jet laser having a first beam size; cutting the wafer from the other one of the bottom surface or the upper surface of the wafer by the water-jet laser having a second beam size; and dividing the wafer-level element wafer and the light-emitting stack into a plurality of light-emitting dies.
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公开(公告)号：US09761774B2
公开(公告)日：2017-09-12
申请号：US14948733
申请日：2015-11-23
申请人： EPISTAR CORPORATION
发明人： Chao-Hsing Chen , Tsung-Hsun Chiang , Chien-Chih Liao , Wen-Hung Chuang , Min-Yen Tsai , Bo-Jiun Hu
摘要： A light-emitting element includes: a semiconductor light-emitting stack including a first semiconductor layer with a first conductivity, an active layer, and a second semiconductor layer with a second conductivity; a first conductive layer disposed on the semiconductor light-emitting stack and electrically connecting the second semiconductor layer; a first insulating layer on the first conductive layer; a second conductive layer disposed on the first insulating layer and electrically connecting the first semiconductor layer; a second insulating layer on the second conductive layer; a first pad and a second pad on the second conductive layer; and a cushion part disposed between the first pad and the second pad.
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公开(公告)号：US12002904B2
公开(公告)日：2024-06-04
申请号：US17241958
申请日：2021-04-27
申请人： EPISTAR CORPORATION
发明人： Chao-Hsing Chen , Tsung-Hsun Chiang , Chien-Chih Liao , Wen-Hung Chuang , Min-Yen Tsai , Bo-Jiun Hu
摘要： A light-emitting element includes a semiconductor light-emitting stack including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed therebetween; a first conductive layer disposed on the second semiconductor layer and electrically connecting the second semiconductor layer; a second conductive layer disposed on the second semiconductor layer and electrically connecting the first semiconductor layer; and a cushion part disposed on and directly contacts the first conductive layer, wherein in a top view, the cushion part is surrounded by and electrically isolated from the second conductive layer.
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公开(公告)号：US09461209B2
公开(公告)日：2016-10-04
申请号：US14853511
申请日：2015-09-14
申请人： Epistar Corporation
发明人： Min-Yen Tsai , Chao-Hsing Chen , Tsung-Hsun Chiang , Wen-Hung Chuang , Bo-Jiun Hu , Tzu-Yao Tseng , Jia-Kuen Wang , Kuan-Yi Lee , Yi-Ming Chen , Chun-Yu Lin , Tsung-Hsien Yang , Tzu-Chieh Hsu , Kun-De Lin , Yao-Ning Chan , Chih-Chiang Lu
CPC分类号： H01L33/382 , H01L33/0012 , H01L33/22 , H01L33/387 , H01L33/46 , H01L33/62 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： A semiconductor light-emitting device includes a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes a periphery surface surrounding the active layer; a plurality of vias penetrating the semiconductor stack to expose the first semiconductor layer; and a patterned metal layer formed on the plurality of vias and covered the periphery surface of the first semiconductor layer.
摘要翻译： 半导体发光器件包括半导体堆叠，其包括第一半导体层，第二半导体层和在第一半导体层和第二半导体层之间的有源层，其中第一半导体层包括围绕有源层的外围表面; 穿过所述半导体堆叠以暴露所述第一半导体层的多个通孔; 以及形成在所述多个通路上并且覆盖所述第一半导体层的外围表面的图案化金属层。
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公开(公告)号：US20140124819A1
公开(公告)日：2014-05-08
申请号：US13861449
申请日：2013-04-12
申请人： EPISTAR CORPORATION
发明人： Ting-Chia Ko , De-Shan Kuo , Chun-Hsiang Tu , Po-Shun Chiu , Chien-Kai Chung , Hui-Chun Yeh , Min-Yen Tsai , Tsun-Kai Ko
IPC分类号： H01L33/42
CPC分类号： H01L33/42 , H01L33/0095 , H01L33/22 , H01L33/40 , H01L33/405
摘要： A light-emitting device comprises a first semiconductor layer; and a transparent conductive oxide layer comprising a diffusion region having a first metal material and a non-diffusion region devoid of the first metal material, wherein the non-diffusion region is closer to the first semiconductor layer than the diffusion region.
摘要翻译： 发光器件包括第一半导体层; 以及透明导电氧化物层，其包括具有第一金属材料的扩散区域和不具有第一金属材料的非扩散区域，其中所述非扩散区域比所述扩散区域更靠近所述第一半导体层。
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公开(公告)号：USD927436S1
公开(公告)日：2021-08-10
申请号：US29682110
申请日：2019-03-01
申请人： EPISTAR CORPORATION
设计人： Min-Yen Tsai
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公开(公告)号：US20190074409A1
公开(公告)日：2019-03-07
申请号：US16182241
申请日：2018-11-06
申请人： EPISTAR CORPORATION
发明人： Chao-Hsing Chen , Tsung-Hsun Chiang , Chien-Chih Liao , Wen-Hung Chuang , Min-Yen Tsai , Bo-Jiun Hu
摘要： A light-emitting element includes a semiconductor light-emitting stack including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed therebetween; a first conductive layer disposed on the second semiconductor layer and electrically connecting the second semiconductor layer; a second conductive layer disposed on the second semiconductor layer and electrically connecting the first semiconductor layer; and a cushion part disposed on and directly contacts the first conductive layer, wherein in a top view, the cushion part is surrounded by and electrically isolated from the second conductive layer.
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公开(公告)号：US10153402B2
公开(公告)日：2018-12-11
申请号：US15669613
申请日：2017-08-04
申请人： EPISTAR CORPORATION
发明人： Chao-Hsing Chen , Tsung-Hsun Chiang , Chien-Chih Liao , Wen-Hung Chuang , Min-Yen Tsai , Bo-Jiun Hu
摘要： A light-emitting element includes a semiconductor light-emitting stack including a first semiconductor layer, an active layer, and a second semiconductor layer; a first conductive layer disposed on the second semiconductor layer and electrically connecting the second semiconductor layer; a second conductive layer disposed on the second semiconductor layer and electrically connecting the first semiconductor layer; and a cushion part disposed on the semiconductor light-emitting stack; wherein in a top view, the cushion part is disposed in a center region of the light-emitting element.
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公开(公告)号：US09508901B2
公开(公告)日：2016-11-29
申请号：US14013166
申请日：2013-08-29
申请人： Epistar Corporation
发明人： Juin-Yang Chen , De-Shan Kuo , Chun-Hsiang Tu , Po-Shun Chiu , Chien-Kai Chung , Hui-Chun Yeh , Min-Yen Tsai , Tsun-Kai Ko , Chun-Teng Ko
CPC分类号： H01L33/38 , H01L33/0095 , H01L33/22 , H01L33/42
摘要： A light-emitting device comprises: a first semiconductor layer; a transparent conductive oxide layer including a diffusion region having a first metal material and a non-diffusion region devoid of the first metal material, wherein the non-diffusion region is closer to the first semiconductor layer than the diffusion region; and a metal layer formed on the transparent conductive oxide layer, wherein the metal layer is pervious to a light emitted from the active layer and comprises a pattern.
摘要翻译： 发光器件包括：第一半导体层; 透明导电氧化物层，其包括具有第一金属材料的扩散区域和不具有第一金属材料的非扩散区域，其中所述非扩散区域比所述扩散区域更靠近所述第一半导体层; 以及形成在所述透明导电氧化物层上的金属层，其中所述金属层可透过从所述有源层发射的光并且包括图案。
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