公开(公告)号：US09011638B2

公开(公告)日：2015-04-21

申请号：US14220060

申请日：2014-03-19

申请人： Epistar Corporation

发明人： Chen-Ke Hsu ,  Liang Sheng Chi ,  Chun-Chang Chen ,  Win-Jim Su ,  Hsu-Cheng Lin ,  Mei-Ling Tsai ,  Yi Lung Liu ,  Chen Ou

IPC分类号： B32B38/10 ,  H01L21/66 ,  H01L21/67

CPC分类号： H01L22/20 ,  H01L21/67005 ,  H01L21/67132 ,  H01L21/67271 ,  Y10S156/93 ,  Y10S156/941 ,  Y10T156/1111 ,  Y10T156/1116 ,  Y10T156/1158 ,  Y10T156/1168 ,  Y10T156/1179 ,  Y10T156/1195 ,  Y10T156/1917 ,  Y10T156/1933 ,  Y10T156/1983

摘要： A method of chip sorting comprises providing a chip holder having a first surface; providing multiple chips on the first surface; providing a chip receiver having a second surface, wherein the second surface faces the first surface; attaching the multiple chips to the second surface; decreasing an adhesion between the multiple chips and the first surface; and separating the multiple chips from the first surface after the step of decreasing the adhesion between the multiple chips and the first surface.

摘要翻译： 一种芯片分选方法包括：提供具有第一表面的芯片保持器; 在第一表面上提供多个芯片; 提供具有第二表面的芯片接收器，其中所述第二表面面向所述第一表面; 将多个芯片附接到第二表面; 降低多个芯片和第一表面之间的粘合力; 以及在减少所述多个芯片与所述第一表面之间的粘合力的步骤之后，从所述第一表面分离所述多个芯片。

公开(公告)号：US09887320B2

公开(公告)日：2018-02-06

申请号：US15342634

申请日：2016-11-03

申请人： EPISTAR CORPORATION

发明人： Hsin-Ying Wang ,  De-Shan Kuo ,  Wen-Hung Chuang ,  Tsun-Kai Ko ,  Chia-Chen Tsai ,  Chyi-Yang Sheu ,  Chun-Chang Chen

IPC分类号： H01L33/00 ,  H01L33/20 ,  H01L33/38

CPC分类号： H01L33/20 ,  H01L33/38 ,  H01L33/387

摘要： A light-emitting element, includes a substrate; a light-emitting stack formed on the substrate, including a triangular upper surface parallel to the substrate, having three sides and three vertexes; a first electrode formed on the light-emitting stack and located near a first vertex of the three vertexes of the triangular upper surface; and a second electrode formed on the light-emitting stack; including two second electrode pads respectively located near other two vertexes of the three vertexes; and a second electrode extending part extending from the second electrode pads, disposed along the three sides of the triangular upper surface.

公开(公告)号：US09881907B2

公开(公告)日：2018-01-30

申请号：US15187231

申请日：2016-06-20

申请人： EPISTAR CORPORATION

发明人： Hsu-Cheng Lin ,  Pei-Shan Fang ,  Ching-Yi Chiu ,  Chun-Chang Chen

IPC分类号： H01L33/00 ,  H01L31/00 ,  H01L25/075 ,  H01L21/82 ,  H01L27/15 ,  H01L27/14 ,  H01L21/683 ,  H01L21/66 ,  H01L23/544 ,  H01L31/048 ,  H01L31/18 ,  H01L33/54

CPC分类号： H01L25/0753 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/82 ,  H01L22/22 ,  H01L23/544 ,  H01L27/14 ,  H01L27/15 ,  H01L31/048 ,  H01L31/1876 ,  H01L33/0054 ,  H01L33/54 ,  H01L2221/6834 ,  H01L2221/68354 ,  H01L2223/54413 ,  H01L2223/54433 ,  H01L2924/0002 ,  H01L2933/0033 ,  H01L2933/005 ,  H01L2924/00

摘要： An aggregation of semiconductor devices comprises a first layer, a second layer adhered to the first layer, and a plurality of semiconductor devices arranged between the first layer and the second layer to form a shape, wherein the shape comprises a curve and a mark, and the first layer is flexible.

公开(公告)号：US09502615B2

公开(公告)日：2016-11-22

申请号：US14939829

申请日：2015-11-12

申请人： Epistar Corporation

发明人： Hsin-Ying Wang ,  De-Shan Kuo ,  Wen-Hung Chuang ,  Tsun-Kai Ko ,  Chia-Chen Tsai ,  Chyi-Yang Sheu ,  Chun-Chang Chen

IPC分类号： H01L33/00 ,  H01L33/38 ,  H01L33/20

CPC分类号： H01L33/20 ,  H01L33/38 ,  H01L33/387

摘要： A light-emitting element, includes a substrate; a first light-emitting stack formed on the substrate, including a triangular upper surface parallel to the substrate, and wherein the triangular upper surface has three sides and three vertexes; a first electrode formed on the first light-emitting stack and located near a first side of the three sides of the triangular upper surface; and a second electrode formed on the first light-emitting stack; including a second electrode pad near a first vertex of the three vertexes; and a second electrode extending part extending from the second electrode pad in two directions, disposed along other two sides of the three sides to surround the first electrode and stopping at the first side to form an opening.

摘要翻译： 发光元件包括基板; 形成在基板上的第一发光叠层，包括平行于基板的三角形上表面，并且其中三角形上表面具有三个边和三个顶点; 第一电极，其形成在所述第一发光叠层上并且位于所述三角形上表面的三个边的第一侧附近; 和形成在第一发光叠层上的第二电极; 包括靠近所述三个顶点的第一顶点的第二电极垫; 以及从所述第二电极焊盘沿两个方向延伸的第二电极延伸部分，所述第二电极延伸部分沿着所述三个侧面的另外两个侧面设置以围绕所述第一电极并且在所述第一侧处停止形成开口。

公开(公告)号：US09397275B2

公开(公告)日：2016-07-19

申请号：US14663439

申请日：2015-03-19

申请人： EPISTAR CORPORATION

发明人： Hsu-Cheng Lin ,  Ching-Yi Chiu ,  Pei-Shan Fang ,  Chun-Chang Chen

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50 ,  H01L33/54 ,  H01L21/82 ,  H01L27/15 ,  H01L27/14 ,  H01L21/683 ,  H01L21/66 ,  H01L23/544 ,  H01L25/075 ,  H01L31/048 ,  H01L31/18 ,  H01L33/00

CPC分类号： H01L25/0753 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/82 ,  H01L22/22 ,  H01L23/544 ,  H01L27/14 ,  H01L27/15 ,  H01L31/048 ,  H01L31/1876 ,  H01L33/0054 ,  H01L33/54 ,  H01L2221/6834 ,  H01L2221/68354 ,  H01L2223/54413 ,  H01L2223/54433 ,  H01L2924/0002 ,  H01L2933/0033 ,  H01L2933/005 ,  H01L2924/00

摘要： A method of manufacturing an aggregation of semiconductor devices comprising the steps of providing a first layer; sequentially addressing and adhering a plurality of semiconductor devices to the first layer to form a shape having a curve; providing a second layer; and adhering the second layer to the first layer.

摘要翻译： 一种制造半导体器件聚集的方法，包括以下步骤：提供第一层; 顺序地将多个半导体器件寻址并粘附到第一层以形成具有曲线的形状; 提供第二层; 并将第二层粘附到第一层。

公开(公告)号：US09006756B2

公开(公告)日：2015-04-14

申请号：US13910581

申请日：2013-06-05

申请人： Epistar Corporation

发明人： Hsu-Cheng Lin ,  Ching-Yi Chiu ,  Pei-Shan Fang ,  Chun-Chang Chen

IPC分类号： H01L33/00 ,  H01L31/00 ,  H01L21/82 ,  H01L27/15 ,  H01L27/14 ,  H01L21/683

CPC分类号： H01L25/0753 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/82 ,  H01L22/22 ,  H01L23/544 ,  H01L27/14 ,  H01L27/15 ,  H01L31/048 ,  H01L31/1876 ,  H01L33/0054 ,  H01L33/54 ,  H01L2221/6834 ,  H01L2221/68354 ,  H01L2223/54413 ,  H01L2223/54433 ,  H01L2924/0002 ,  H01L2933/0033 ,  H01L2933/005 ,  H01L2924/00

摘要： An aggregation of semiconductor devices, comprising: a first layer comprising a first surface and a second surface; a second layer comprising a first region and a second region; and a plurality of semiconductor devices disposed between the first layer and the second region wherein a shape of the second region comprises a curve and a mark.

摘要翻译： 半导体器件的集合，包括：包括第一表面和第二表面的第一层; 第二层，包括第一区域和第二区域; 以及设置在所述第一层和所述第二区域之间的多个半导体器件，其中所述第二区域的形状包括曲线和标记。