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1.发明授权公开(公告)号：US11862751B2
公开(公告)日：2024-01-02
申请号：US17169057
申请日：2021-02-05
申请人： EPISTAR CORPORATION
发明人： Chia-Chen Tsai , Jia-Liang Tu , Chi-Ling Lee
IPC分类号： H01L33/00 , H01L21/683 , H01L21/66 , H01L33/62 , H01L25/075
CPC分类号： H01L33/0095 , H01L21/6835 , H01L22/22 , H01L25/0753 , H01L33/62 , H01L2221/68354 , H01L2221/68368 , H01L2933/0066
摘要： A manufacturing method for an LED includes: providing a substrate having an upper surface divided into a plurality of zones; a LED group formed on each of the zones and wherein: a plurality of the LED groups includes a first LED group; and the LEDs of the first LED group include a defective LED; forming a testing circuit on the substrate to electrically connect the LEDs; testing the first LED group by the testing circuit; recording a position of the defective LED; providing a carrier; and performing one of the following steps by the position of the defective LED: removing the defective LED from the substrate and then transferring the other LEDs in the first LED group to the carrier; transferring the other LEDs other than the defective LED in the first LED group to the carrier; or transferring the LEDs to the carrier and repairing it on the carrier.
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公开(公告)号：US09887320B2
公开(公告)日：2018-02-06
申请号：US15342634
申请日：2016-11-03
申请人： EPISTAR CORPORATION
发明人： Hsin-Ying Wang , De-Shan Kuo , Wen-Hung Chuang , Tsun-Kai Ko , Chia-Chen Tsai , Chyi-Yang Sheu , Chun-Chang Chen
CPC分类号： H01L33/20 , H01L33/38 , H01L33/387
摘要： A light-emitting element, includes a substrate; a light-emitting stack formed on the substrate, including a triangular upper surface parallel to the substrate, having three sides and three vertexes; a first electrode formed on the light-emitting stack and located near a first vertex of the three vertexes of the triangular upper surface; and a second electrode formed on the light-emitting stack; including two second electrode pads respectively located near other two vertexes of the three vertexes; and a second electrode extending part extending from the second electrode pads, disposed along the three sides of the triangular upper surface.
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公开(公告)号：US09502615B2
公开(公告)日：2016-11-22
申请号：US14939829
申请日：2015-11-12
申请人： Epistar Corporation
发明人： Hsin-Ying Wang , De-Shan Kuo , Wen-Hung Chuang , Tsun-Kai Ko , Chia-Chen Tsai , Chyi-Yang Sheu , Chun-Chang Chen
CPC分类号： H01L33/20 , H01L33/38 , H01L33/387
摘要： A light-emitting element, includes a substrate; a first light-emitting stack formed on the substrate, including a triangular upper surface parallel to the substrate, and wherein the triangular upper surface has three sides and three vertexes; a first electrode formed on the first light-emitting stack and located near a first side of the three sides of the triangular upper surface; and a second electrode formed on the first light-emitting stack; including a second electrode pad near a first vertex of the three vertexes; and a second electrode extending part extending from the second electrode pad in two directions, disposed along other two sides of the three sides to surround the first electrode and stopping at the first side to form an opening.
摘要翻译： 发光元件包括基板; 形成在基板上的第一发光叠层，包括平行于基板的三角形上表面，并且其中三角形上表面具有三个边和三个顶点; 第一电极，其形成在所述第一发光叠层上并且位于所述三角形上表面的三个边的第一侧附近; 和形成在第一发光叠层上的第二电极; 包括靠近所述三个顶点的第一顶点的第二电极垫; 以及从所述第二电极焊盘沿两个方向延伸的第二电极延伸部分，所述第二电极延伸部分沿着所述三个侧面的另外两个侧面设置以围绕所述第一电极并且在所述第一侧处停止形成开口。
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公开(公告)号：US10319780B2
公开(公告)日：2019-06-11
申请号：US15675351
申请日：2017-08-11
申请人： Epistar Corporation
发明人： Chen Ou , Chun-Wei Chang , Chih-Wei Wu , Sheng-Chih Wang , Hsin-Mei Tsai , Chia-Chen Tsai , Chuan-Cheng Chang
摘要： A light-emitting device includes a first semiconductor layer; a first, a second and a third light-emitting structures formed on the same first semiconductor layer; a first trench between the first and the second light-emitting structures; a second trench between the second and the third light-emitting structures, wherein the first and the second trenches include bottom portions exposing a surface of the first semiconductor layer; a third trench in one of the light-emitting structures, exposing the first semiconductor layer and extending along a direction parallel with the first semiconductor layer; an insulating bridge part in the first and the second trenches, connecting the light-emitting structures; a first electrode in the third trench, electrically connecting to the first semiconductor layer; and a second electrode, including a pad on one of the light-emitting structures and an extending part; wherein the extending part is formed on the insulating bridge part and extends to the light-emitting structures.
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公开(公告)号：US09768227B2
公开(公告)日：2017-09-19
申请号：US14470396
申请日：2014-08-27
申请人： Epistar Corporation
发明人： Chen Ou , Chun-Wei Chang , Chih-Wei Wu , Sheng-Chih Wang , Hsin-Mei Tsai , Chia-Chen Tsai , Chuan-Cheng Chang
摘要： A light-emitting element comprises a first semiconductor layer, a first light-emitting structure and a second light-emitting structure on the first semiconductor layer, a first electrode on the first semiconductor layer, a second electrode on the first light-emitting structure, a first trench between the first light-emitting structure and the second light-emitting structure, exposing a first upper surface of the first semiconductor layer, and a second trench formed in the first light-emitting structure, exposing a second upper surface of the first semiconductor layer, wherein the first trench is devoid of the first electrode and the second electrode formed therein, wherein the first electrode is formed in the second trench.
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公开(公告)号：US10930701B2
公开(公告)日：2021-02-23
申请号：US16390899
申请日：2019-04-22
申请人： Epistar Corporation
发明人： Chen Ou , Chun-Wei Chang , Chih-Wei Wu , Sheng-Chih Wang , Hsin-Mei Tsai , Chia-Chen Tsai , Chuan-Cheng Chang
摘要： A light-emitting device includes a first semiconductor layer having an uppermost surface and a bottommost surface; a first light-emitting structure and a second light-emitting structure formed on the same first semiconductor layer, wherein the first semiconductor layer is continuous; a first trench formed between the first and the second light-emitting structures; and a second electrode formed on the second semiconductor layer and including a second pad and a plurality of second extending parts extending from the second pad; wherein the second pad is between the first and the second light-emitting structures, and the plurality of second extending parts extends to the first and the second light-emitting structures, respectively; wherein the first trench passes through the uppermost surface but does not extend to the bottommost surface; wherein the first trench includes an equal width in a top view.
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