公开(公告)号：US20170336336A1

公开(公告)日：2017-11-23

申请号：US15528330

申请日：2015-03-23

Applicant: JFE STEEL CORPORATION

Inventor： Yuji TANAKA ,  Takako YAMASHITA ,  Masayasu NAGOSHI

IPC: G01N23/225 ,  H01J37/256 ,  H01J37/18 ,  H01J37/28 ,  G01N23/207

CPC classification number: G01N23/2252 ,  G01N23/207 ,  H01J37/18 ,  H01J37/256 ,  H01J37/28 ,  H01J2237/022 ,  H01J2237/2067 ,  H01J2237/2807 ,  H01J2237/2813

Abstract: The present invention makes it possible to analyze trace carbon in a sample without the effects of contamination. In an electron probe microanalyzer, a liquid nitrogen trap and a plasma or oxygen radical generator are jointly used as a means for suppressing contamination, and two or more carbon detection units for detecting characteristic x-rays of carbon in the sample are provided.

公开(公告)号：US20170330756A1

公开(公告)日：2017-11-16

申请号：US15664554

申请日：2017-07-31

Applicant: Entegris, Inc.

Inventor： Robert Kaim ,  Joseph D. Sweeney ,  Anthony M. Avila ,  Richard S. Ray

IPC: H01L21/22 ,  H01J37/08 ,  H01J37/317 ,  H01L21/265 ,  H01L21/223 ,  F17C7/00 ,  H01J37/30

CPC classification number: H01L21/2225 ,  F17C7/00 ,  H01J37/08 ,  H01J37/3002 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/304 ,  H01L21/223 ,  H01L21/26506 ,  Y02E60/321 ,  Y10T428/13

Abstract: An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or by utilizing dopant materials with supplemental gas(es) effective to provide such enhancement.

公开(公告)号：US09799490B2

公开(公告)日：2017-10-24

申请号：US14674558

申请日：2015-03-31

Applicant: FEI Company

Inventor： Aiden Martin ,  Geoff McCredie ,  Milos Toth

IPC: A61N5/00 ,  H01J37/32 ,  H01J37/18 ,  H01J37/305 ,  H01J37/317 ,  H01J37/30

CPC classification number: H01J37/32 ,  H01J37/18 ,  H01J37/3002 ,  H01J37/3056 ,  H01J37/3178 ,  H01J2237/002 ,  H01J2237/006 ,  H01J2237/022 ,  H01J2237/2003 ,  H01J2237/24445 ,  H01J2237/30472 ,  H01J2237/317

Abstract: A cold trap is provided to reduce contamination gases that react with the beam during operations that use a process gas. The cold trap is set to a temperature that condenses the contamination gas but does not condense the process gas. Cold traps may be used in the sample chamber and in the gas line.

公开(公告)号：US09773639B2

公开(公告)日：2017-09-26

申请号：US15196149

申请日：2016-06-29

Applicant: JEOL Ltd.

Inventor： Kazuya Yamazaki

IPC: H01J37/26 ,  H01J37/18 ,  H01J37/244 ,  H01J37/10

CPC classification number: H01J37/18 ,  H01J37/10 ,  H01J37/16 ,  H01J37/244 ,  H01J37/26 ,  H01J2237/002 ,  H01J2237/022 ,  H01J2237/028 ,  H01J2237/18 ,  H01J2237/186

Abstract: There is provided an electron microscope capable of easily achieving power saving. The electron microscope (100) includes a controller (60) for switching the mode of operation of the microscope from a first mode where electron lenses (12, 14, 18, 20) are activated to a second mode where the electron lenses (12, 14, 18, 20) are not activated. During this operation for making a switch from the first mode to the second mode, the controller (60) performs the steps of: closing a first vacuum gate valve (50), opening a second vacuum gate valve (52), and vacuum pumping the interior of the electron optical column (2) of the microscope by the second vacuum pumping unit (40); then controlling a heating section (26) to heat an adsorptive member (242); then opening the first vacuum gate valve (50), closing the second vacuum gate valve (52), and vacuum pumping the interior of the electron optical column (2) by the first vacuum pumping unit (30); and turning off the electron lenses (12, 14, 18, 20).

公开(公告)号：US09761410B2

公开(公告)日：2017-09-12

申请号：US15012245

申请日：2016-02-01

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Alexandre Likhanskii ,  Jay T. Scheuer ,  William Davis Lee

IPC: H01J37/30 ,  H01J37/317

CPC classification number: H01J37/3007 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/057

Abstract: An apparatus may include an electrostatic filter having a plurality of electrodes; a voltage supply assembly coupled to the plurality of electrodes; a cleaning ion source disposed between the electrostatic filter and a substrate position, the cleaning ion source generating a plasma during a cleaning mode, wherein a dose of ions exit the cleaning ion source; and a controller having a first component to generate a control signal for controlling the voltage supply assembly, wherein a negative voltage is applied to at least one of the plurality of electrodes when the plasma is generated.

公开(公告)号：US09754786B2

公开(公告)日：2017-09-05

申请号：US14691904

申请日：2015-04-21

Applicant: Entegris, Inc.

Inventor： Robert Kaim ,  Joseph D. Sweeney ,  Anthony M. Avila ,  Richard S. Ray

IPC: H01J27/22 ,  H01L21/22 ,  H01J37/08 ,  H01J37/317 ,  F17C7/00 ,  H01L21/265 ,  H01J37/30 ,  H01L21/223

CPC classification number: H01L21/2225 ,  F17C7/00 ,  H01J37/08 ,  H01J37/3002 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/304 ,  H01L21/223 ,  H01L21/26506 ,  Y02E60/321 ,  Y10T428/13

Abstract: An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or by utilizing dopant materials with supplemental gas(es) effective to provide such enhancement.

公开(公告)号：US09685298B1

公开(公告)日：2017-06-20

申请号：US15012308

申请日：2016-02-01

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Alexandre Likhanskii ,  Jay T. Scheuer ,  William Davis Lee

IPC: H01J37/08

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/151

Abstract: An apparatus may include an ion source generating an ion beam, the ion source coupled to a first voltage. The apparatus may further include a stopping element disposed between the ion source and a substrate position; a stopping voltage supply coupled to the stopping element; and a control component to direct the stopping voltage supply to apply a stopping voltage to the stopping element, the stopping voltage being equal to or more positive than the first voltage when the ion beam comprises positive ions, and being equal to or more negative than the first voltage when the ion beam comprises negative ions, wherein at least a portion of the ion beam is deflected backwardly from an initial trajectory as deflected ions when the stopping voltage is applied to the stopping element.

公开(公告)号：US20170125211A1

公开(公告)日：2017-05-04

申请号：US15297551

申请日：2016-10-19

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Yu-Ho Ni ,  Chun-Chin Kang ,  Chieh-Jen Yang

IPC: H01J37/30 ,  B08B7/00 ,  H01J37/304 ,  H02N13/00

CPC classification number: H01J37/30 ,  B08B7/00 ,  B08B7/0035 ,  H01J37/20 ,  H01J37/304 ,  H01J2237/022 ,  H01J2237/2002 ,  H01J2237/30466 ,  H01L21/6833 ,  H02N13/00

Abstract: A method of cleaning an electrostatic chuck (ESC) is disclosed. An ion beam is delivered to a work surface of an ESC where no workpiece is held. The interaction between the ion beam and the depositions on the work surface may remove the depositions away the ESC, no matter the interaction is physical bombardment and/or chemical reaction. Hence, the practical chucking force between the ESC and the held workpiece may be less affected by the depositions formed on the work surface during the period of holding no workpiece, no matter the photoresist dropped away the workpiece and/or the particles inside the process chamber. Depends on the details of the depositions, such as the structure, the thickness and the material, the details of ion beam may be correspondingly adjusted, such as the ion beam current, the ion beam energy and the kinds of ions. For example, a low energy ion beam may be used to reduce the potential damages on work surface of the ESC. For example, both the oxygen and the inert gas may be used to generate the ion beam for removing the depositions and protecting the dielectric layer inside the work surface of the ESC.

公开(公告)号：US20160293380A1

公开(公告)日：2016-10-06

申请号：US14674558

申请日：2015-03-31

Applicant: FEI Company

Inventor： Aiden Martin ,  Geoff McCredie ,  Milos Toth

IPC: H01J37/32 ,  H01J37/30

CPC classification number: H01J37/32 ,  H01J37/18 ,  H01J37/3002 ,  H01J37/3056 ,  H01J37/3178 ,  H01J2237/002 ,  H01J2237/006 ,  H01J2237/022 ,  H01J2237/2003 ,  H01J2237/24445 ,  H01J2237/30472 ,  H01J2237/317

Abstract: A cold trap is provided to reduce contamination gases that react with the beam during operations that use a process gas. The cold trap is set to a temperature that condenses the contamination gas but does not condense the process gas. Cold traps may be used in the sample chamber and in the gas line.

Abstract translation: 提供冷阱以减少在使用工艺气体的操作期间与梁发生反应的污染气体。 冷阱设置为冷凝污染气体但不会使工艺气体冷凝的温度。 冷阱可用于样品室和气体管线中。

公开(公告)号：US09449792B2

公开(公告)日：2016-09-20

申请号：US14193182

申请日：2014-02-28

Applicant: NuFlare Technology, Inc.

Inventor： Tetsuro Nishiyama

IPC: H01L21/00 ,  H01J37/317 ,  H01J37/09 ,  H01L21/263

CPC classification number: H01J37/3174 ,  H01J37/09 ,  H01J2237/022 ,  H01J2237/0451 ,  H01L21/2636

Abstract: A charged particle beam writing apparatus according to an embodiment includes: a beam emitter configured to emit a charged particle beam; an aperture having an opening portion through which the charged particle beam emitted by the beam emitter passes; an aperture beam tube being provided on a surface of the aperture and functioning as a thermally conductive member having thermal conductivity; and a heater provided on a surface of the aperture beam tube and configured to supply heat to the aperture via the aperture beam tube.

Abstract translation: 根据实施例的带电粒子束写入装置包括：被配置为发射带电粒子束的射束发射器; 具有开口部分的孔，由射束发射器发射的带电粒子束通过该开口部分; 孔径管设置在孔的表面上并用作具有导热性的导热构件; 以及加热器，其设置在所述孔径光束管的表面上并且经配置以经由所述孔径管向所述孔提供热量。