公开(公告)号：US10685980B2

公开(公告)日：2020-06-16

申请号：US16268642

申请日：2019-02-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwang Soo Kim ,  Si Wan Kim ,  Jun Hyoung Kim ,  Kyoung Taek Oh ,  Bong Hyun Choi

IPC: H01L29/792 ,  H01L27/11582 ,  H01L27/11565 ,  H01L29/423 ,  H01L27/1157 ,  H01L29/06 ,  H01L27/11573

Abstract: A three-dimensional semiconductor memory device includes: a base substrate; a gate stack structure disposed on the base substrate, and including gate electrodes stacked in a direction substantially perpendicular to a top surface of the base substrate; a penetration region penetrating through the gate stack structure and surrounded by the gate stack structure; and vertical channel structures passing through the gate stack structure. The lowermost gate electrodes among the gate electrodes are spaced apart from each other, and a portion of at least one of the lowermost gate electrodes has a shape bent toward the penetration region.

公开(公告)号：US20200091189A1

公开(公告)日：2020-03-19

申请号：US16692385

申请日：2019-11-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang Soo Kim ,  Shin Hwan Kang ,  Jae Hoon Jang ,  Kohji Kanamori

IPC: H01L27/11582

Abstract: A memory device includes a plurality of gate electrode layers stacked on a substrate, a plurality of channel layers penetrating the plurality of gate electrode layers, a gate insulating layer between the plurality of gate electrode layers and the plurality of channel layers, and a common source line on the substrate adjacent to the gate electrode layers. The common source line includes a first part and a second part that are alternately arranged in a first direction and have different heights in a direction vertical to a top surface of the substrate. The gate insulating layer includes a plurality of vertical parts and a horizontal part. The plurality of vertical parts surrounds corresponding ones of the plurality of channel layers. The horizontal part extends parallel to a top surface of the substrate.

公开(公告)号：US20190051599A1

公开(公告)日：2019-02-14

申请号：US15902806

申请日：2018-02-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gang Zhang ,  Kwang Soo Kim ,  Won Bong Jung

IPC: H01L23/522 ,  H01L21/768 ,  H01L27/11524 ,  H01L27/11536 ,  H01L27/11556 ,  H01L23/532

Abstract: A semiconductor device comprises a peripheral circuit region provided on a first substrate and including circuit devices and a contact plug extending on the first substrate in a vertical direction; a memory cell region provided on a second substrate disposed above the first substrate and including memory cells; and a through insulating region penetrating through the second substrate on the contact plug and covering an upper surface of the contact plug.

公开(公告)号：US09915623B2

公开(公告)日：2018-03-13

申请号：US15218584

申请日：2016-07-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang Soo Kim ,  Taejoong Kim ,  Byeonghwan Jeon ,  Yongsuk Choi ,  Youngduk Kim ,  Taeseok Oh ,  SangYun Lee ,  Yong-Ho Choi

IPC: G01N21/00 ,  G01N21/95 ,  G02B27/09 ,  G02B13/00 ,  G02B3/00 ,  G01N21/956

CPC classification number: G01N21/9501 ,  G01N21/95623 ,  G02B3/0006 ,  G02B13/0095 ,  G02B27/0988

Abstract: An optical inspection apparatus includes an inspection target unit on which an inspection target is loaded, an illumination optical unit configured to irradiate incident light to the inspection target, an objective lens unit disposed between the illumination optical unit and the inspection target unit, a detection optical unit configured to receive reflective light reflected from the inspection target to thereby detect a presence or absence of a defect on the inspection target, and a control unit configured to control the illumination optical unit and the detection optical unit. The illumination optical unit includes a light source part configured to irradiate the incident light, and a spatial filter array configured to modify a transmission region of the incident light irradiated from the light source part. The spatial filter array includes a spatial filter part, and a filter movement part configured to move the spatial filter part.

公开(公告)号：US09853049B2

公开(公告)日：2017-12-26

申请号：US15241450

申请日：2016-08-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang Soo Kim ,  Jae Hoon Jang ,  Byoung Keun Son

IPC: H01L27/115 ,  H01L27/11582 ,  H01L23/528 ,  H01L23/532 ,  H01L29/08 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/11556 ,  H01L27/11568 ,  H01L27/11573 ,  H01L29/788 ,  H01L29/792

CPC classification number: H01L27/11582 ,  H01L27/0688 ,  H01L27/11568 ,  H01L27/11573

Abstract: A memory device includes a gate structure including a plurality of gate electrode layers stacked on an upper surface of a substrate, a plurality of channel areas passing through the gate structure and extending in a direction perpendicular to the upper surface of the substrate, a source area disposed on the substrate to extend in a first direction and including impurities, and a common source line extending in the direction perpendicular to the upper surface of the substrate to be connected to the source area, and including a plurality of layers containing different materials.

公开(公告)号：US09151962B2

公开(公告)日：2015-10-06

申请号：US13773736

申请日：2013-02-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun Jae Lee ,  Myoung Ki Ahn ,  Kwang Soo Kim ,  In Ho Seo ,  Chang Hoon Choi

IPC: G02B27/40 ,  G02B7/38 ,  G02B3/10

CPC classification number: G02B27/40 ,  G02B3/10 ,  G02B7/38

Abstract: An autofocus control apparatus includes a beam splitter, a condenser lens and a detector. The beam splitter directs light beams from a light source toward a sample and passes light beams reflected from the sample to the condenser lens. The condenser lens condenses the light beams, and the detector detects a focal point deviation of the sample relative to a focal point of the condenser lens. The focal point deviation is detected based on an intersection of a focal line passing through different focal points of the condenser lens and a light receiving plane configured to receive the light beams passing through the condenser lens.

Abstract translation: 自动对焦控制装置包括分束器，聚光透镜和检测器。 分束器将来自光源的光束引向样品，并将从样品反射的光束传递到聚光透镜。 聚光透镜冷凝光束，并且检测器检测样品相对于聚光透镜的焦点的焦点偏差。 基于通过聚光透镜的不同焦点的焦点线和被配置为接收通过聚光透镜的光束的受光面的交点，检测焦点偏差。

公开(公告)号：US11659713B2

公开(公告)日：2023-05-23

申请号：US17495320

申请日：2021-10-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joo Won Park ,  Kyeong Jin Park ,  Kwang Soo Kim

IPC: H01L27/11573 ,  H01L23/535 ,  H01L27/11582

CPC classification number: H01L27/11573 ,  H01L23/535 ,  H01L27/11582

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate and a stacked structure in which a plurality of insulating layers and a plurality of electrode layers are alternately stacked on the substrate. The semiconductor device includes a plurality of dummy channel structures that pass through the stacked structure. Moreover, the semiconductor device includes a contact structure in contact with at least one of the plurality of dummy channel structures adjacent thereto, and in contact with one of the plurality of electrode layers.

公开(公告)号：US10991714B2

公开(公告)日：2021-04-27

申请号：US16223761

申请日：2018-12-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang Soo Kim ,  Jun Hyoung Kim ,  Si Wan Kim ,  Kyoung Taek Oh

IPC: H01L27/11582 ,  H01L27/11565 ,  H01L29/423 ,  H01L27/11573 ,  G11C16/08

Abstract: A three-dimensional semiconductor memory device includes first and second gate stacked structures, disposed on a base substrate, and stacked in a direction perpendicular to a surface of the base plate, the first and second gate stacked structures including gate electrodes spaced apart from each other and stacked; a through region passing through the first and second gate stacked structures and surrounded by the first and second gate stacked structures; and vertical channel structures passing through the first and second gate stacked structures, wherein the first gate stacked structure has first contact pads adjacent to the through region and arranged in a stepped shape, the second gate stacked structure having second contact pads adjacent to the through region and arranged in a stepped shape, at least a portion of the second contact pads overlap the first contact pads on one side of the through region.

公开(公告)号：US20200185400A1

公开(公告)日：2020-06-11

申请号：US16451385

申请日：2019-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joo Won Park ,  Kyeong Jin Park ,  Kwang Soo Kim

IPC: H01L27/11573 ,  H01L27/11582 ,  H01L23/535

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate and a stacked structure in which a plurality of insulating layers and a plurality of electrode layers are alternately stacked on the substrate. The semiconductor device includes a plurality of dummy channel structures that pass through the stacked structure. Moreover, the semiconductor device includes a contact structure in contact with at least one of the plurality of dummy channel structures adjacent thereto, and in contact with one of the plurality of electrode layers.

公开(公告)号：US10468433B2

公开(公告)日：2019-11-05

申请号：US16015702

申请日：2018-06-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang Soo Kim ,  Young Jin Jung ,  Jae Duk Lee

IPC: H01L27/1159 ,  H01L27/11597 ,  H01L27/11578 ,  H01L27/11568 ,  H01L27/11556 ,  H01L27/11551 ,  H01L27/11595 ,  H01L27/11526 ,  H01L27/11521 ,  H01L27/11519 ,  H01L27/11548 ,  H01L27/1156 ,  H01L27/11565 ,  H01L27/11575 ,  H01L27/11582 ,  H01L27/02 ,  H01L29/10 ,  H01L29/423 ,  H01L21/033 ,  H01L21/311 ,  H01L29/66 ,  H01L29/792

Abstract: A three-dimensional semiconductor device is provided including main separation structures disposed on a substrate, and extending in a first direction, parallel to a surface of the substrate; gate electrodes disposed between the main separation structures; a first secondary separation structure penetrating through the gate electrodes, between the main separation structures, and including a first linear portion and a second linear portion, having end portions opposing each other; and second secondary separation structures disposed between the first secondary separation structure and the main separation structures, and penetrating through the gate electrodes. The second secondary separation structures have end portions opposing each other between the second linear portion and the main separation structures.