公开(公告)号：US09164729B2

公开(公告)日：2015-10-20

申请号：US13759130

申请日：2013-02-05

Applicant: QUALCOMM Incorporated

Inventor： Wenqing Wu ,  Peiyuan Wang ,  Raghu Sagar Madala ,  Senthil Kumar Govindaswamy ,  Kendrick H. Yuen ,  Robert P. Gilmore ,  Jung Pill Kim ,  Seung H. Kang

IPC: G06F7/58

CPC classification number: G06F7/58 ,  G06F7/588

Abstract: A method and apparatus for generating random binary sequences from a physical entropy source having a state A and a state B by detecting whether the physical entropy source is in the state A or in the state B, attempting to shift the state of the physical entropy source to the opposite state in a probabilistic manner with less than 100% certainty, and producing one of four outputs based on the detected state and the state of the physical entropy source before the attempted shift. The outputs are placed in first and second queues and extracted in pairs from each queue. Random binary bits are output based on the sequences extracted from each queue.

Abstract translation: 一种用于通过检测物理熵源是处于状态A还是处于状态B从具有状态A和状态B的物理熵源生成随机二进制序列的方法和装置，试图移动物理熵源的状态 以小于100％确定性的概率方式处于相反状态，并且在尝试移位之前基于检测到的状态和物理熵源的状态产生四个输出中的一个。 将输出放置在第一和第二队列中，并从每个队列成对提取。 基于从每个队列提取的序列输出随机二进制位。

公开(公告)号：US09087579B1

公开(公告)日：2015-07-21

申请号：US14165702

申请日：2014-01-28

Applicant: QUALCOMM Incorporated

Inventor： Wenqing Wu ,  Venkatasubramanian Narayanan ,  Kendrick Hoy Leong Yuen

IPC: G11C11/00 ,  G11C13/00 ,  G11C11/16

CPC classification number: G11C13/004 ,  G11C7/065 ,  G11C7/08 ,  G11C7/222 ,  G11C11/1673 ,  G11C2013/0042 ,  G11C2013/0057 ,  G11C2207/002

Abstract: Sense amplifiers employing control circuitry for decoupling resistive memory sense inputs during state sensing to prevent current back injection, and related methods and systems are disclosed. In one embodiment, sense amplifier is provided. The sense amplifier comprises a differential sense input coupled to bit line. The sense amplifier also comprises a differential reference input coupled to reference line. First inverter inverts first inverter input into first inverter output coupled to second inverter input of second inverter, first inverter output configured to provide state of bitcell. Second inverter inverts second inverter input into second inverter output coupled to first inverter input. Control circuit couples differential reference input to first inverter and differential sense input to second inverter in latch mode, and decouples differential reference input to first inverter and differential sense input to second inverter in sensing mode to provide sensed state of bitcell on first inverter output.

Abstract translation: 公开了采用控制电路的感应放大器，用于在状态检测期间去耦电阻性存储器感测输入以防止电流反向注入，以及相关方法和系统。 在一个实施例中，提供了读出放大器。 感测放大器包括耦合到位线的差分感测输入。 读出放大器还包括耦合到参考线的差分参考输入。 第一变频器将第一变频器输入转换为与第二变频器的第二变频器输入相连接的第一变频器输出，第一变频器输出被配置为提供位单元的状态。 第二个变频器将第二个变频器输入转换成与第一个变频器输入相连的第二个变频器输出。 控制电路在锁存模式下将差分参考输入与第一个反相器和差分检测输入耦合到第二个反相器，在感测模式下将差分参考输入与第一个反相器和差分检测输入去耦到第二个反相器，以提供第一个反相器输出上的位单元的检测状态。

公开(公告)号：US20150145575A1

公开(公告)日：2015-05-28

申请号：US14330494

申请日：2014-07-14

Applicant: QUALCOMM Incorporated

Inventor： Wenqing Wu ,  Raghu Sagar Madala ,  Kendrick Hoy Leong Yuen ,  Karim Arabi ,  Robert Philip Gilmore

IPC: H03K3/45 ,  H03K19/20 ,  H03K3/012 ,  H03K3/037

CPC classification number: H03K3/45 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/18 ,  H01L43/08 ,  H03K19/18 ,  H03K19/20

Abstract: Aspects described herein are related to spintronic logic gates employing a Giant Spin Hall Effect (GSHE) magnetic tunnel junction (MTJ) element(s) for performing logical operations. In one aspect, a spintronic logic gate is disclosed that includes a charge current generation circuit and a GSHE MTJ element. The charge current generation circuit is configured to generate a charge current representing an input bit set. The input bit set may include one or more input bit states for a logical operation. The GSHE MTJ element is configured to set a logical output bit state for the logical operation, and has a threshold current level. The GSHE MTJ element is configured to generate a GSHE spin current in response to the charge current and perform the logical operation on the input bit set by setting the logical output bit state based on whether the GSHE spin current exceeds the threshold current level.

Abstract translation: 本文描述的方面涉及采用用于执行逻辑操作的巨型旋转霍尔效应（GSHE）磁性隧道结（MTJ）元件的自旋电子逻辑门。 一方面，公开了一种包括充电电流产生电路和GSHE MTJ元件的自旋电子逻辑门。 充电电流产生电路被配置为产生表示输入位组的充电电流。 输入位集可以包括用于逻辑运算的一个或多个输入位状态。 GSHE MTJ元件配置为逻辑运算的逻辑输出位状态，并具有阈值电流电平。 GSHE MTJ元件被配置为响应于充电电流产生GSHE自旋电流，并且基于GSHE自旋电流是否超过阈值电流电平来设置逻辑输出位状态来对所设置的输入位执行逻辑运算。

公开(公告)号：US20150084972A1

公开(公告)日：2015-03-26

申请号：US14036526

申请日：2013-09-25

Applicant: QUALCOMM Incorporated

Inventor： Wenqing Wu ,  Senthil Kumar Govindaswamy ,  Raghu Sagar Madala ,  Peiyuan Wang ,  Kendrick Hoy Leong Yuen ,  David Joseph Winston Hansquine

IPC: G09G3/20 ,  H04B5/00

CPC classification number: H04B5/0031 ,  G09G3/2096 ,  G09G2370/16 ,  H01L27/22 ,  H01L43/08 ,  H04B5/0087 ,  H04W4/80

Abstract: Embodiments described herein are related to contactless data communication. Related systems and methods for contactless data communication are disclosed herein. For example, a magnetic field-based contactless transmitter is disclosed that includes a substrate, a pair of dipole coils disposed on the substrate, and a drive circuit electrically coupled to the pair of dipole coils. To transmit data to a magnetic tunnel junction (MTJ) receiver disposed on a second substrate, the drive circuit is configured to drive the pair of dipole coils so as to generate a magnetic field in-plane to the MTJ receiver. Data can be transmitted from the magnetic field-based contactless transmitter to the MTJ receiver using the magnetic field.

Abstract translation: 本文描述的实施例涉及非接触式数据通信。 本文公开了用于非接触式数据通信的相关系统和方法。 例如，公开了一种基于磁场的非接触式发射器，其包括衬底，设置在衬底上的一对偶极线圈，以及与该对偶极线圈电耦合的驱动电路。 为了将数据发送到设置在第二基板上的磁性隧道结（MTJ）接收器，驱动电路被配置为驱动一对偶极子线圈，以便在MTJ接收器的平面内产生磁场。 可以使用磁场将数据从基于磁场的非接触式发射机传输到MTJ接收机。

公开(公告)号：US20140222880A1

公开(公告)日：2014-08-07

申请号：US13759130

申请日：2013-02-05

Applicant: QUALCOMM INCORPORATED

Inventor： Wenqing Wu ,  Peiyuan Wang ,  Raghu Sagar Madala ,  Senthil Kumar Govindaswamy ,  Kendrick H. Yuen ,  Robert P. Gilmore ,  Jung Pill Kim ,  Seung H. Kang

IPC: G06F7/58

CPC classification number: G06F7/58 ,  G06F7/588

Abstract: A method and apparatus for generating random binary sequences from a physical entropy source having a state A and a state B by detecting whether the physical entropy source is in the state A or in the state B, attempting to shift the state of the physical entropy source to the opposite state in a probabilistic manner with less than 100% certainty, and producing one of four outputs based on the detected state and the state of the physical entropy source before the attempted shift. The outputs are placed in first and second queues and extracted in pairs from each queue. Random binary bits are output based on the sequences extracted from each queue.

Abstract translation: 一种用于通过检测物理熵源是处于状态A还是处于状态B从具有状态A和状态B的物理熵源生成随机二进制序列的方法和装置，试图移动物理熵源的状态 以小于100％确定性的概率方式处于相反状态，并且在尝试移位之前基于检测到的状态和物理熵源的状态产生四个输出中的一个。 将输出放置在第一和第二队列中，并从每个队列成对提取。 基于从每个队列提取的序列输出随机二进制位。

公开(公告)号：US09300295B1

公开(公告)日：2016-03-29

申请号：US14626920

申请日：2015-02-19

Applicant: QUALCOMM Incorporated

Inventor： Yaojun Zhang ,  Wenqing Wu ,  Kendrick Hoy Leong Yuen ,  Karim Arabi

IPC: H03K19/18 ,  H03K19/20 ,  H03K19/003

CPC classification number: H03K19/00346 ,  G11C11/1675 ,  G11C11/18 ,  H01L27/22 ,  H01L43/08 ,  H03K3/45 ,  H03K19/18

Abstract: Systems and methods pertain to avoiding undesirable current paths or sneak paths in spintronic logic gates formed from Giant Spin Hall Effect (GSHE) magnetic tunnel junction (MTJ) elements. Sneak path prevention logic is coupled to the GSHE MTJ elements, to prevent the sneak paths. The sneak path prevention logic may include one or more transistors coupled to the one or more GSHE MTJ elements, to restrict write current from flowing from an intended pipeline stage to an unintended pipeline stage during a write operation. The sneak path prevention logic may also include one or more diodes coupled to the one or more GSHE MTJ elements to prevent a preset current from flowing into input circuitry or a charge current generation circuit. A preset line may be coupled to the one or more GSHE MTJ elements to divert preset current from flowing into unintended paths.

Abstract translation: 系统和方法涉及避免由巨型旋转霍尔效应（GSHE）磁性隧道结（MTJ）元件形成的自旋电子逻辑门中的不必要的电流路径或潜行路径。 潜行路径预防逻辑耦合到GSHE MTJ元素，以防止潜行路径。 潜行路径预防逻辑可以包括耦合到一个或多个GSHE MTJ元件的一个或多个晶体管，以在写入操作期间限制写入电流从预期流水线级流到非预期流水线级。 潜行路径预防逻辑还可以包括耦合到一个或多个GSHE MTJ元件的一个或多个二极管，以防止预设电流流入输入电路或充电电流产生电路。 预设线可以耦合到一个或多个GSHE MTJ元件，以将预设电流从流入非预期路径转移。

公开(公告)号：US09135976B2

公开(公告)日：2015-09-15

申请号：US14104443

申请日：2013-12-12

Applicant: QUALCOMM Incorporated

Inventor： Wenqing Wu ,  Kendrick Hoy Leong Yuen ,  Xiaochun Zhu ,  Seung Hyuk Kang ,  Matthew Michael Nowak ,  Jeffrey Alexander Levin ,  Robert P. Gilmore ,  Nicholas Ka Ming Yu

IPC: G11C11/00 ,  G11C11/16 ,  G11C11/56 ,  G11C11/54

CPC classification number: G11C11/1675 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/54 ,  G11C11/5607

Abstract: A probabilistic programming current is injected into a cluster of bi-stable probabilistic switching elements, the probabilistic programming current having parameters set to result in a less than unity probability of any given bi-stable switching element switching, and a resistance of the cluster of bi-stable switching elements is detected. The probabilistic programming current is injected and the resistance of the cluster state detected until a termination condition is met. Optionally the termination condition is detecting the resistance of the cluster of bi-stable switching elements at a value representing a multi-bit data.

Abstract translation: 将概率编程电流注入到双稳定概率开关元件簇中，概率编程电流具有设置为导致任何给定双稳态开关元件切换的小于一概率的参数，以及bi的簇的电阻 - 检测到稳定的开关元件。 注入概率编程电流，并检测到簇状态的电阻，直到满足终止条件。 可选地，终止条件是以表示多位数据的值检测双稳态开关元件群的电阻。

公开(公告)号：US20140231940A1

公开(公告)日：2014-08-21

申请号：US13770306

申请日：2013-02-19

Applicant: QUALCOMM INCORPORATED

Inventor： William H. Xia ,  Wenqing Wu ,  Kendrick H. Yuen ,  Abhishek Banerjee ,  Xia Li ,  Seung H. Kang ,  Jung Pill Kim

IPC: H01L43/02 ,  H01L43/12

CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/1693 ,  H01L43/08 ,  H01L43/12

Abstract: A memory cell includes an elongated first electrode coupled to a magnetic tunnel junction (MTJ) structure and an elongated second electrode aligned with the elongated first electrode coupled to the MTJ structure. The elongated electrodes are configured to direct mutually additive portions of a switching current induced magnetic field through the MTJ. The mutually additive portions enhance switching of the MTJ in response to application of the switching current.

Abstract translation: 存储单元包括耦合到磁隧道结（MTJ）结构的细长第一电极和与耦合到MTJ结构的细长第一电极对准的细长第二电极。 细长电极被配置为引导开关电流感应磁场的相互添加部分通过MTJ。 响应于开关电流的应用，相互添加的部分增强MTJ的切换。

公开(公告)号：US20140108478A1

公开(公告)日：2014-04-17

申请号：US13651954

申请日：2012-10-15

Applicant: QUALCOMM INCORPORATED

Inventor： Kangho Lee ,  Taehyun Kim ,  Xiaochun Zhu ,  David M. Jacobson ,  Raghu Sagar Madala ,  Wenqing Wu ,  Jung Pill Kim ,  Seung H. Kang

IPC: G06F7/58

CPC classification number: G06F7/588

Abstract: A random number generator system that utilizes a magnetic tunnel junction (MTJ) that is controlled by an STT-MTJ entropy controller that determines whether to proceed with generating random numbers or not by monitoring the health of the MTJ-based random number generator is illustrated. If the health of the random number generation is above a threshold, the STT-MTJ entropy controller shuts down the MTJ-based random number generator and sends a message to a requesting chipset that a secure key generation is not possible. If the health of the random number generation is below a threshold, the entropy controller allows the MTJ-based random number generator to generate random numbers based on a specified algorithm, the output of which is post processed and used by a cryptographic-quality deterministic random bit generator to generate a security key for a requesting chipset.

Abstract translation: 示出了利用由STT-MTJ熵控制器控制的磁隧道结（MTJ）的随机数发生器系统，其通过监测基于MTJ的随机数发生器的健康来确定是否继续生成随机数。 如果随机数生成的健康状况高于阈值，则STT-MTJ熵控制器关闭基于MTJ的随机数生成器，并且向请求芯片组发送消息，即不可能产生安全密钥。 如果随机数生成的健康状况低于阈值，则熵控制器允许基于MTJ的随机数发生器基于指定的算法产生随机数，其输出被后处理并由加密质量确定性随机使用 以产生请求芯片组的安全密钥。

公开(公告)号：US20170019153A1

公开(公告)日：2017-01-19

申请号：US15280119

申请日：2016-09-29

Applicant: QUALCOMM Incorporated

Inventor： Wenqing Wu ,  Senthil Kumar Govindaswamy ,  Raghu Sagar Madala ,  Peiyuan Wang ,  Kendrick Hoy Leong Yuen ,  David Joseph Winston Hansquine

IPC: H04B5/00 ,  H04W4/00

CPC classification number: H04B5/0031 ,  G09G3/2096 ,  G09G2370/16 ,  H01L27/22 ,  H01L43/08 ,  H04B5/0087 ,  H04W4/80

Abstract: Embodiments described herein are related to contactless data communication. Related systems and methods for contactless data communication are disclosed herein. For example, a magnetic field-based contactless transmitter is disclosed that includes a substrate, a pair of dipole coils disposed on the substrate, and a drive circuit electrically coupled to the pair of dipole coils. To transmit data to a magnetic tunnel junction (MTJ) receiver disposed on a second substrate, the drive circuit is configured to drive the pair of dipole coils so as to generate a magnetic field in-plane to the MTJ receiver. Data can be transmitted from the magnetic field-based contactless transmitter to the MTJ receiver using the magnetic field.

Abstract translation: 本文描述的实施例涉及非接触式数据通信。 本文公开了用于非接触式数据通信的相关系统和方法。 例如，公开了一种基于磁场的非接触式发射器，其包括衬底，设置在衬底上的一对偶极线圈，以及与该对偶极线圈电耦合的驱动电路。 为了将数据发送到设置在第二基板上的磁性隧道结（MTJ）接收器，驱动电路被配置为驱动一对偶极子线圈，以便在MTJ接收器的平面内产生磁场。 可以使用磁场将数据从基于磁场的非接触式发射机传输到MTJ接收机。