公开(公告)号：US20180315650A1

公开(公告)日：2018-11-01

申请号：US15498024

申请日：2017-04-26

Applicant: Applied Materials, Inc.

Inventor： He REN ,  Feiyue MA ,  Yu LEI ,  Kai WU ,  Mehul B. NAIK ,  Zhiyuan WU ,  Vikash BANTHIA ,  Hua AI

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/532 ,  H01L23/522

CPC classification number: H01L21/76879 ,  H01L21/28562 ,  H01L21/76816 ,  H01L21/76831 ,  H01L21/76834 ,  H01L23/5226 ,  H01L23/53209 ,  H01L23/53214 ,  H01L23/53228 ,  H01L23/53257

Abstract: Embodiments of the present disclosure generally relate an interconnect formed on a substrate and a method of forming the interconnect thereon. In an embodiment, a via and trench in a stack formed on the substrate. A bottom of the via is pre-treated using a first pre-treatment procedure. A sidewall of the via is pre-treated using a second pre-treatment procedure. A first metal fill material of a first type is deposited on the stack, in the via. A second metal fill material of a second type is deposited on the stack, in the trench.

公开(公告)号：US20240194527A1

公开(公告)日：2024-06-13

申请号：US18197846

申请日：2023-05-16

Applicant: Applied Materials, Inc.

Inventor： Sahil Jaykumar PATEL ,  Xianyuan ZHAO ,  Wei LEI ,  Aixi ZHANG ,  Yi XU ,  Yu LEI

IPC: H01L21/768 ,  H01L23/532

CPC classification number: H01L21/76877 ,  H01L21/76843 ,  H01L21/76855 ,  H01L23/53266

Abstract: Methods and apparatus for processing a substrate are provided. In some embodiments, a method includes depositing an amorphous interlayer atop a first layer on a substrate, wherein the first layer is a metal-containing layer, and depositing a metal layer atop the amorphous interlayer.

公开(公告)号：US20230343644A1

公开(公告)日：2023-10-26

申请号：US18070383

申请日：2022-11-28

Applicant: Applied Materials, Inc.

Inventor： Chih-Hsun HSU ,  Shiyu YUE ,  Jiang LU ,  Rongjun WANG ,  Xianmin TANG ,  Zhenjiang CUI ,  Chi Hong CHING ,  Meng-Shan WU ,  Chun-chieh WANG ,  Wei LEI ,  Yu LEI

IPC: H01L21/768 ,  H01L21/67 ,  H01L23/532

CPC classification number: H01L21/76877 ,  H01L21/67063 ,  H01L21/6719 ,  H01L21/76843 ,  H01L21/76871 ,  H01L23/53266

Abstract: A method and apparatus for a gap-fill in semiconductor devices are provided. The method includes forming a metal seed layer on an exposed surface of the substrate, wherein the substrate has features in the form of trenches or vias formed in a top surface of the substrate, the features having sidewalls and a bottom surface extending between the sidewalls. A gradient oxidation process is performed in a first process chamber to oxidize exposed portions of the metal seed layer to form a metal oxide, wherein the gradient oxidation process preferentially oxidizes a field region of the substrate over the bottom surface of the features. An etch back process is performed in the first process chamber removes or reduces the oxidized portion of the seed layer. A metal gap-fill process fills or partially fills the features with a gap fill material.

公开(公告)号：US20230343643A1

公开(公告)日：2023-10-26

申请号：US17868475

申请日：2022-07-19

Applicant: Applied Materials, Inc.

Inventor： Chih-Hsun HSU ,  Shiyu YUE ,  Wei LEI ,  Yi XU ,  Jiang LU ,  Yu LEI ,  Ziye XIONG ,  Tsung-Han YANG ,  Zhimin QI ,  Aixi ZHANG ,  Jie ZHANG ,  Liqi WU ,  Rongjun WANG ,  Shihchung CHEN ,  Meng-Shan WU ,  Chun-Chieh WANG ,  Annamalai LAKSHMANAN ,  Yixiong YANG ,  Xianmin TANG

IPC: H01L21/768 ,  H01L23/522

CPC classification number: H01L21/76877 ,  H01L21/76876 ,  H01L21/76843 ,  H01L21/76865 ,  H01L23/5226 ,  H01L21/76826

Abstract: A method and apparatus for a gap-fill in semiconductor devices are provided. The method includes forming a metal seed layer on an exposed surface of the substrate, wherein the substrate has features in the form of trenches or vias formed in a top surface of the substrate, the features having sidewalls and a bottom surface extending between the sidewalls. A gradient oxidation process is performed to oxidize exposed portions of the metal seed layer to form a metal oxide, wherein the gradient oxidation process preferentially oxidizes a field region of the substrate over the bottom surface of the features. An etch back process removes or reduces the oxidized portion of the seed layer. A metal gap-fill process fills or partially fills the features with a gap fill material.

公开(公告)号：US20230326791A1

公开(公告)日：2023-10-12

申请号：US17718242

申请日：2022-04-11

Applicant: Applied Materials, Inc.

Inventor： Zhimin QI ,  Yi XU ,  Shirish A. PETHE ,  Xingyao GAO ,  Shiyu YUE ,  Aixi ZHANG ,  Wei LEI ,  Yu LEI ,  Geraldine VASQUEZ ,  Dien-yeh WU ,  Da HE

IPC: H01L21/768 ,  H01L21/285 ,  C23C14/18 ,  C23C16/14

CPC classification number: H01L21/76879 ,  H01L21/2855 ,  H01L21/28562 ,  H01L21/28568 ,  C23C14/18 ,  C23C16/14

Abstract: Embodiments of methods and associated apparatus for filling a feature in a substrate are provided herein. In some embodiments, a method of depositing tungsten in features of a substrate includes: depositing a seed layer consisting essentially of tungsten in the features via a physical vapor deposition (PVD) process; and depositing a bulk layer consisting essentially of tungsten in the features via a chemical vapor deposition (CVD) process to fill the features such that the deposition of the bulk layer is selective to within the features as compared to a field region of the substrate, wherein the CVD process is performed by flowing hydrogen gas (H2) at a first flow rate and a tungsten precursor at a second flow rate, and wherein the first flow rate is less than the second flow rate.

公开(公告)号：US20230098561A1

公开(公告)日：2023-03-30

申请号：US17489089

申请日：2021-09-29

Applicant: Applied Materials, Inc.

Inventor： Jiajie CEN ,  Da HE ,  Yi XU ,  Yu LEI

IPC: H01L21/768 ,  H01L21/02

Abstract: A method of gap filling a feature on a substrate decreases the feature-to-feature gap fill height variation by using a tungsten halide soak treatment. In some embodiments, the method may include heating a substrate to a temperature of approximately 350 degrees Celsius to approximately 450 degrees Celsius, exposing the substrate to a tungsten halide gas at a process pressure of approximately 5 Torr to approximately 25 Torr, soaking the substrate for a soak time of approximately 5 seconds to approximately 60 seconds with the tungsten halide gas, and performing a metal preclean process and a gap fill deposition on a plurality of features on the substrate after soaking of the substrate has completed.

公开(公告)号：US20220181201A1

公开(公告)日：2022-06-09

申请号：US17110826

申请日：2020-12-03

Applicant: Applied Materials, Inc.

Inventor： Yi XU ,  Yufei HU ,  He REN ,  Yu LEI ,  Shi YOU ,  Kazuya DAITO

IPC: H01L21/768

Abstract: Embodiments of the disclosure provide methods which reduce or eliminate lateral growth of a selective tungsten layer. Further embodiments provide an integrated clean and deposition method which improves the selectivity of selectively deposited tungsten on trench structures. Additional embodiments provide methods for forming a more uniform and selective bottom-up gap fill for trench structures with improved film properties.

公开(公告)号：US20200303250A1

公开(公告)日：2020-09-24

申请号：US16803842

申请日：2020-02-27

Applicant: Applied Materials, Inc.

Inventor： Xi CEN ,  Feiyue MA ,  Kai WU ,  Yu LEI ,  Kazuya DAITO ,  Yi XU ,  Vikash BANTHIA ,  Mei CHANG ,  He REN ,  Raymond Hoiman HUNG ,  Yakuan YAO ,  Avgerinos V. GELATOS ,  David T. OR ,  Jing ZHOU ,  Guoqiang JIAN ,  Chi-Chou LIN ,  Yiming LAI ,  Jia YE ,  Jenn-Yue WANG

IPC: H01L21/768 ,  H01L21/3213 ,  H01L21/02

Abstract: The present disclosure generally relates to methods for processing of substrates, and more particularly relates to methods for forming a metal gapfill. In one implementation, the method includes forming a metal gapfill in an opening using a multi-step process. The multi-step process includes forming a first portion of the metal gapfill, performing a sputter process to form one or more layers on one or more side walls, and growing a second portion of the metal gapfill to fill the opening with the metal gapfill. The metal gapfill formed by the multi-step process is seamless, and the one or more layers formed on the one or more side walls seal any gaps or defects between the metal gapfill and the side walls. As a result, fluids utilized in subsequent processes do not diffuse through the metal gapfill.

公开(公告)号：US20180068890A1

公开(公告)日：2018-03-08

申请号：US15811647

申请日：2017-11-13

Applicant: Applied Materials, Inc.

Inventor： Bhushan N. ZOPE ,  Avgerinos V. GELATOS ,  Bo ZHENG ,  Yu LEI ,  Xinyu FU ,  Srinivas GANDIKOTA ,  Sang-Ho YU ,  Mathew ABRAHAM

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/02 ,  H01L21/48 ,  H01L21/285 ,  H01L29/66

CPC classification number: H01L21/76879 ,  H01L21/02057 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/4846 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53209 ,  H01L23/5329 ,  H01L29/66621

Abstract: Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved.

公开(公告)号：US20160247718A1

公开(公告)日：2016-08-25

申请号：US15145578

申请日：2016-05-03

Applicant: Applied Materials, Inc.

Inventor： Bhushan N. ZOPE ,  Avgerinos V. GELATOS ,  Bo ZHENG ,  Yu LEI ,  Xinyu FU ,  Srinivas GANDIKOTA ,  Sang-ho YU ,  Mathew ABRAHAM

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/02

CPC classification number: H01L21/76879 ,  H01L21/02057 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/4846 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53209 ,  H01L23/5329 ,  H01L29/66621

Abstract: Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved.