公开(公告)号：US20170084486A1

公开(公告)日：2017-03-23

申请号：US15364780

申请日：2016-11-30

Applicant: Applied Materials, Inc.

Inventor： Bhushan N. ZOPE ,  Avgerinos V. GELATOS ,  Bo ZHENG ,  Yu LEI ,  Xinyu FU ,  Srinivas GANDIKOTA ,  Sang Ho YU ,  Mathew ABRAHAM

IPC: H01L21/768 ,  H01L21/285

Abstract: Methods for depositing a metal layer in a feature definition of a semiconductor device are provided. In one implementation, a method for depositing a metal layer for forming a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a metal layer on a substrate and annealing the metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the metal layer on the substrate, exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process until a predetermined thickness of the metal layer is achieved.

公开(公告)号：US20150093891A1

公开(公告)日：2015-04-02

申请号：US14482601

申请日：2014-09-10

Applicant: Applied Materials, Inc.

Inventor： Bhushan N. ZOPE ,  Avgerinos V. GELATOS ,  Bo ZHENG ,  Yu LEI ,  Xinyu FU ,  Srinivas GANDIKOTA ,  Sang Ho YU ,  Mathew ABRAHAM

IPC: H01L21/768

CPC classification number: H01L21/76877 ,  C23C16/18 ,  H01L21/2855 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76879 ,  H01L21/76883

Abstract: Methods for depositing a metal layer in a feature definition of a semiconductor device are provided. In one implementation, a method for depositing a metal layer for forming a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a metal layer on a substrate and annealing the metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the metal layer on the substrate, exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process until a predetermined thickness of the metal layer is achieved.

Abstract translation: 提供了在半导体器件的特征定义中沉积金属层的方法。 在一个实施方案中，提供了一种用于沉积用于形成半导体器件的金属层的方法。 该方法包括进行循环金属沉积工艺以将金属层沉积在衬底上并使设置在衬底上的金属层退火。 循环金属沉积工艺包括将衬底暴露于沉积前体气体混合物以将金属层的一部分沉积在衬底上，将金属层的一部分暴露于等离子体处理工艺或氢退火工艺中，并重复暴露衬底 到沉积前体气体混合物并将金属层的该部分暴露于等离子体处理工艺或氢气退火工艺中，直到达到金属层的预定厚度。

公开(公告)号：US20180068890A1

公开(公告)日：2018-03-08

申请号：US15811647

申请日：2017-11-13

Applicant: Applied Materials, Inc.

Inventor： Bhushan N. ZOPE ,  Avgerinos V. GELATOS ,  Bo ZHENG ,  Yu LEI ,  Xinyu FU ,  Srinivas GANDIKOTA ,  Sang-Ho YU ,  Mathew ABRAHAM

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/02 ,  H01L21/48 ,  H01L21/285 ,  H01L29/66

CPC classification number: H01L21/76879 ,  H01L21/02057 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/4846 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53209 ,  H01L23/5329 ,  H01L29/66621

Abstract: Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved.

公开(公告)号：US20160247718A1

公开(公告)日：2016-08-25

申请号：US15145578

申请日：2016-05-03

Applicant: Applied Materials, Inc.

Inventor： Bhushan N. ZOPE ,  Avgerinos V. GELATOS ,  Bo ZHENG ,  Yu LEI ,  Xinyu FU ,  Srinivas GANDIKOTA ,  Sang-ho YU ,  Mathew ABRAHAM

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/02

CPC classification number: H01L21/76879 ,  H01L21/02057 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/4846 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53209 ,  H01L23/5329 ,  H01L29/66621

Abstract: Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved.